公开(公告)号：US20130049159A1

公开(公告)日：2013-02-28

申请号：US13222048

申请日：2011-08-31

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L31/08 ,  H01L29/66 ,  H01L31/18

CPC分类号： G01K7/18 ,  H01L28/22 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1604 ,  H01L29/408 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

摘要翻译： 根据实施例，半导体器件在半导体衬底上包括半导体衬底和非晶半绝缘层。

公开(公告)号：US20120104537A1

公开(公告)日：2012-05-03

申请号：US12938920

申请日：2010-11-03

申请人： Gerhard Schmidt ,  Daniel Schloegl

发明人： Gerhard Schmidt ,  Daniel Schloegl

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L27/0676 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/8613

摘要： A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body with a first semiconductor region and a second semiconductor region spaced apart from each other. A first metallization is in contact with the first semiconductor region. A second metallization is in contact with the second semiconductor region. An insulating region extends between the first semiconductor region and the second semiconductor region. A semi-insulating region having a resistivity of about 103 Ohm cm to about 1014 Ohm cm is arranged on the insulating region and forms a resistor between the first metallization and the second metallization.

摘要翻译： 提供半导体器件和形成半导体器件的方法。 半导体器件包括具有第一半导体区域和彼此间隔开的第二半导体区域的半导体本体。 第一金属化与第一半导体区域接触。 第二金属化与第二半导体区域接触。 绝缘区域在第一半导体区域和第二半导体区域之间延伸。 在绝缘区域上布置具有大约103欧姆厘米至大约1014欧姆厘米电阻率的半绝缘区域，并在第一金属化和第二金属化之间形成电阻器。

公开(公告)号：US20110272735A1

公开(公告)日：2011-11-10

申请号：US12776866

申请日：2010-05-10

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/78 ,  H01L29/739 ,  H01L29/06

CPC分类号： H01L29/0661 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7396 ,  H01L29/74 ,  H01L29/7811

摘要： A semiconductor component includes a semiconductor body having a first surface and a second surface, and having an inner region and an edge region. The semiconductor component further includes a pn-junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region. A first trench extends from the first side in the edge region into the semiconductor body. The trench has sidewalls that are arranged opposite to another and that are beveled relative to a horizontal direction of the semiconductor body.

摘要翻译： 半导体部件包括具有第一表面和第二表面的半导体本体，并且具有内部区域和边缘区域。 半导体部件还包括在第一导电类型的第一半导体区域和第二导电类型的第二半导体区域之间的pn结，pn结在内部区域中在半导体主体的横向方向上延伸。 第一沟槽从边缘区域的第一侧延伸到半导体本体中。 沟槽具有相对于另一侧布置的侧壁，并且相对于半导体本体的水平方向倾斜。

公开(公告)号：US07880272B2

公开(公告)日：2011-02-01

申请号：US11343512

申请日：2006-01-31

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L21/02

CPC分类号： H01L29/8611 ,  H01L29/0615 ,  H01L29/7811

摘要： Aspects of the present invention include a semiconductor device and method. In a transition region of a semiconductor material region, a near-surface compensation doping area with a conductivity type, which is different than the conductivity type of a transition doping area of the semiconductor material region, is provided in the surface region of the semiconductor material region. The doping of the near-surface compensation doping area of the semiconductor device at least partially compensates for the doping in the transition doping area.

摘要翻译： 本发明的方面包括半导体装置和方法。 在半导体材料区域的过渡区域中，在半导体材料的表面区域设置有与半导体材料区域的转移掺杂区域的导电类型不同的导电类型的近表面补偿掺杂区域 地区。 半导体器件的近表面补偿掺杂区域的掺杂至少部分地补偿了过渡掺杂区域中的掺杂。

公开(公告)号：US20090261379A1

公开(公告)日：2009-10-22

申请号：US12107335

申请日：2008-04-22

申请人： Elmar FALCK ,  Josef Bauer ,  Gerhard Schmidt

发明人： Elmar FALCK ,  Josef Bauer ,  Gerhard Schmidt

IPC分类号： H01L29/739 ,  H01L21/265 ,  H01L29/06

CPC分类号： H01L21/261 ,  H01L29/0615 ,  H01L29/861

摘要： A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition, the semiconductor device has an edge region surrounding the active region. This edge region has a variable lateral doping material zone of the second conduction type, which adjoins the well. A transition region in which the concentration of doping material gradually decreases from the concentration of the well to the concentration at the start of the variable lateral doping material zone is located between the lateral well and the variable lateral doping material zone.

摘要翻译： 半导体器件包括具有第一导电类型的垂直漂移路径和具有第二互补导电类型的近表面侧向阱的有源区。 此外，半导体器件具有围绕有源区域的边缘区域。 该边缘区域具有与阱相邻的第二导电类型的可变横向掺杂材料区域。 其中掺杂材料的浓度从阱的浓度逐渐减小到在可变横向掺杂材料区的开始处的浓度的过渡区位于横向阱和可变横向掺杂材料区之间。

公开(公告)号：US20070124140A1

公开(公告)日：2007-05-31

申请号：US11544470

申请日：2006-10-06

申请人： Bernd Iser ,  Gerhard Schmidt

发明人： Bernd Iser ,  Gerhard Schmidt

IPC分类号： G10L19/12

CPC分类号： G10L21/038 ,  G10L21/0264

摘要： A method for extending the spectral bandwidth of an excitation signal of a speech signal includes determining a bandwidth limited excitation signal of the speech signal, and applying a nonlinear function to the excitation signal for generating a bandwidth extended excitation signal.

摘要翻译： 一种用于扩展语音信号的激励信号的频谱带宽的方法包括确定语音信号的带宽限制激励信号，以及向激励信号应用非线性函数以产生带宽扩展激励信号。

公开(公告)号：US20070087240A1

公开(公告)日：2007-04-19

申请号：US11360486

申请日：2006-02-24

申请人： Curtis Robin ,  Alan Mulvenna ,  Gerhard Schmidt

发明人： Curtis Robin ,  Alan Mulvenna ,  Gerhard Schmidt

IPC分类号： H01M8/04

CPC分类号： H01M8/04291 ,  H01M8/04089

摘要： A fuel cell fluid dissipater dissipates excess air, water and unreacted fuel from a fuel cell and comprises a gas permeable and water absorbing dissipation media and a fluid intake assembly. The fluid intake assembly directs excess water and unreacted fuel and air from the fuel cell to the dissipation media where the excess water is directed to a bottom portion of the dissipation media and where the unreacted fuel and air are directed to a top portion of the dissipation media. An air stream is directed through the dissipation media such that the excess water and unreacted fuel and air in the media are dissipated to the environment.

摘要翻译： 燃料电池流体消散器从燃料电池消散过量的空气，水和未反应的燃料，并且包括透气且吸水的耗散介质和流体进料组件。 流体进入组件将多余的水和未反应的燃料和空气从燃料电池引导到耗散介质，其中多余的水被引导到耗散介质的底部，并且未反应的燃料和空气被引导到耗散的顶部 媒体。 空气流被引导通过耗散介质，使得介质中多余的水和未反应的燃料和空气被散发到环境中。

公开(公告)号：US20060197159A1

公开(公告)日：2006-09-07

申请号：US11343512

申请日：2006-01-31

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L27/12

CPC分类号： H01L29/8611 ,  H01L29/0615 ,  H01L29/7811

摘要： Aspects of the present invention include a semiconductor device and method. In a transition region of a semiconductor material region, a near-surface compensation doping area with a conductivity type, which is different than the conductivity type of a transition doping area of the semiconductor material region, is provided in the surface region of the semiconductor material region. The doping of the near-surface compensation doping area of the semiconductor device at least partially compensates for the doping in the transition doping area

摘要翻译： 本发明的方面包括半导体器件和方法。 在半导体材料区域的过渡区域中，在半导体材料的表面区域设置有与半导体材料区域的转移掺杂区域的导电类型不同的导电类型的近表面补偿掺杂区域 地区。 半导体器件的近表面补偿掺杂区域的掺杂至少部分地补偿了过渡掺杂区域中的掺杂

公开(公告)号：US07063906B2

公开(公告)日：2006-06-20

申请号：US10298154

申请日：2002-11-15

申请人： Derek Matthews ,  Alan Mulvenna ,  Ed J. Peters ,  Gerhard Schmidt

发明人： Derek Matthews ,  Alan Mulvenna ,  Ed J. Peters ,  Gerhard Schmidt

IPC分类号： H01M8/04

CPC分类号： H01M8/04029 ,  H01M8/04156

摘要： A fuel cell system comprises a fuel cell having an anode and a cathode, a fuel feed line connected to the anode, an oxidant feed line connected to the cathode and a cathode exhaust line. A water collecting unit is connected to the cathode exhaust line, and a cooling circuit comprising a radiator is configured to cool the fuel cell. A nozzle is connected to the water collecting unit and configured to spray water onto the radiator.

公开(公告)号：US20060106619A1

公开(公告)日：2006-05-18

申请号：US11229027

申请日：2005-09-16

申请人： Bernd Iser ,  Gerhard Schmidt

发明人： Bernd Iser ,  Gerhard Schmidt

IPC分类号： G10L21/00

CPC分类号： G10L21/038

摘要： A system extends a bandwidth of bandlimited audio signals by analyzing bandlimited audio signals at a transmission cycle rate. The analyzer may obtain a bandlimited parameter at a transmission cycle rate. A mapping device or logic in the system obtains a wideband parameter based on the bandlimited parameter. An audio signal generator generates a highband and/or lowband audio signal based on the wideband parameter at the transmission cycle rate. In some systems, the bandlimited audio signal is analyzed at the transmission cycle rate. The highband and/or lowband audio signals and the combined wideband audio signal are generated at the transmission cycle rate.