Abstract:
A dielectric filter comprising a dielectric block having first and second opposed surfaces with a width direction and a length direction greater than the width direction. At least three conductive through holes are arrayed in the dielectric block in the length direction. In one embodiment, a sectional shape of at least one conductive through hole located between two other conductive through holes of the at least three conductive through holes is elongated in the width direction. In another embodiment, a sectional shape of two conductive through holes on either side of a third conductive through hole of the at least three conductive through holes is elongated in the width direction. With these arrangements, the jumping coupling capacitance is controlled.
Abstract:
A dielectric filter, having a dielectric block with an outer surface including first and second end surfaces and a side surface extending between the first and second end surfaces; an external conductor disposed on the outer surface of the dielectric block, the external conductor substantially completely covering the outer surface; at least one hole extending through the dielectric body between the first and second end surfaces, the at least one hole having an inner surface; the at least one hole having a respective pair of internal conductors disposed on the corresponding inner surface thereof and conductively connected to the external conductor respectively at the first and second end surfaces, a respective non-conductive portion at the corresponding inner surface being spaced from both of the end surfaces and thereby separating the corresponding pair of internal conductors and defining a respective capacitance between the corresponding pair of internal conductors; a predetermined portion of the side surface of the dielectric block having a shape such that a first portion of the external conductor at the predetermined portion is closer to at least one of the internal conductors of the at least one hole, as compared with a second portion of the external conductor at a portion of the dielectric block other than the predetermined portion.
Abstract:
A dielectric filter, having a dielectric block with an outer surface including first and second end surfaces and a side surface extending between the first and second end surfaces; an external conductor disposed on the outer surface of the dielectric block, the external conductor substantially completely covering the outer surface; at least one hole extending through the dielectric body between the first and second end surfaces, the at least one hole having an inner surface; the at least one hole having a respective pair of internal conductors disposed on its corresponding inner surface and conductively connected to the external conductor respectively at the first and second end surfaces, a respective non-conductive portion at the corresponding inner surface being spaced from both of the end surfaces and thereby separating the corresponding pair of internal conductors and defining a respective capacitance between the corresponding pair of internal conductors; a predetermined portion of one of the first and second end surfaces of the dielectric block having a shape such that a first portion of the external conductor at the predetermined portion is closer to at least one of the internal conductors of the at least one hole, as compared with a second portion of the external conductor at a portion of the dielectric block other than the predetermined portion.
Abstract:
The invention provides a band elimination filter, comprising: a ring shaped resonator adapted to resonate in two orthogonal modes combined together; one input-output terminal electrically connected to said ring shaped resonator; and a perturbation portion disposed in said ring shaped resonator. The perturbation portion may be composed of a portion of said ring shaped resonator at which a pattern width is different from the other portion of said ring shaped resonator. Or, the perturbation portion may be composed a lumped constant passive element.
Abstract:
The invention provides a dielectric filter, comprising: a dielectric block having a first end surface and a second end surface opposite to said first end surface; a plurality of resonator holes passing through from said first end surface to said second end surface of said dielectric block; an inner conductor provided on an inner surface of said resonator holes; and an outer conductor provided on an outside surface of said dielectric block; wherein said first end surface of said dielectric block constitutes a short-circuit end surface; said short-circuit end surface includes an inside portion including ends of said resonator holes adjacent to each other and an outside portion provided around said inside portion; said inside portion is electrically separated from said outside portion by a non-conducting portion substantially encircling said inside portion; and said inside portion is connected to said outside portion by a microinductance generating means.According to this dielectric filter, it is possible to easily adjust the coupling between adjacent dielectric resonators without altering the configuration and dimensions of a dielectric block.
Abstract:
Resonator holes are formed extending one to the other of a pair of opposing end surfaces of a dielectric block, and inner conductors are formed on inner peripheral surfaces of resonator holes respectively. On an outer surface of dielectric block, a pair of input/output electrodes and one antenna electrode are formed, and expect these regions, an outer conductor is formed. By the coupling of two resonators corresponding to the resonator holes, a transmitting filter is provided, and by two resonators corresponding to resonator holes, a receiving filter is formed.
Abstract:
A dielectric filter with integral electromagnetic shielding comprises a dielectric block having an outer surface including first and second end surfaces and a side surface extending between the first and second end surfaces; an external conductor disposed on the outer surface of the dielectric block and providing integral electromagnetic shielding of the dielectric filter; at least one hole extending through the dielectric body between the first and second end surfaces, having a respective inner surface with a substantially constant cross-sectional shape; a respective pair of internal conductors provided in the at least one hole and conductively connected to the external conductor at respective ends of the hole, a respective non-conductive portion in the hole being spaced from both ends and thereby separating the pair of internal conductors and defining a respective capacitance between the pair of internal conductors, a surface of the respective non-conductive portion being substantially flush with the rest of the inner surface of the hole; and signal input and output electrodes provided on the outer surface of the dielectric body and electrically isolated from the external conductor. Conductive and possibly dielectric material is removed from an end surface of the dielectric block to adjust the resonance frequency and/or the coupling degree of the dielectric filter.
Abstract:
A dielectric resonator including a dielectric block through which an inner conductor formation hole passes; an inner conductor partially formed on an inner surface of the inner conductor formation hole; and an outer conductor formed on an outer surface of the dielectric block. A portion where the inner conductor is not formed is provided on the inner surface of the inner conductor formation hole in the vicinity of one open end portion of the inner conductor formation hole. A stepped portion is provided at a predetermined position on one of the inner surface of the inner conductor formation hole and the outer surface of the dielectric block. Two portions with corresponding resonant characteristics and respective line impedances different from each other are provided with a boundary defined by the stepped portion between the two portions.
Abstract:
In a dielectric filter comprising a dielectric block having outer conductors formed on the outer surfaces of the dielectric block, first and second arrays of through holes are formed in the dielectric block and have inner conductors formed on the inner surfaces thereof. A plurality of stages of dielectric resonators are constructed by the inner conductors formed in the through holes of the first array, the dielectric substance of the dielectric block and the outer conductors formed on the dielectric block, and the neighboring resonators of the first array are coupled to one another to form a band pass filter portion. Further, another plurality of stages of resonators are constructed by the inner conductors formed in the through holes of the second array, the dielectric substance of the dielectric block and the outer conductors formed on the dielectric block, and each of the resonators of the second array and those of the band pass filter portion are coupled to each other at each stage.
Abstract:
A semiconductor laser device includes a structure in which a first conductivity AlGaInP first cladding layer, an active layer, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer are successively epitaxially grown on a first conductivity type GaAs semiconductor substrate. The intermediate layer is within a profile of light produced in the active layer and includes AlGaInP layers having a band gap energy smaller than the band gap energy of the second cladding layer and the third cladding layer and larger than the band gap energy of the active layer. The intermediate layer has a multi-layer structure in which (Al.sub.x Ga.sub.1-x)InP layers (0.ltoreq.x.ltoreq.0.2) and (Al.sub.x Ga.sub.1-x)InP layers (0.5.ltoreq.x.ltoreq.1) are alternatingly laminated. By adding a small amount of Al to the intermediate layer, the band gap energy of the intermediate layer is broadened to control absorption of light emitted from the active layer and an increase in the threshold current of laser oscillation is suppressed. Since the intermediate layer has a multi-layer structure, a semiconductor laser device with sufficient etch stopping effect during etching of an off (100) substrate is realized.
Abstract translation:半导体激光器件包括其中第一导电AlGaInP第一包层,有源层,第二导电型AlGaInP第二覆层,第二导电型AlGaInP中间层和第二导电型AlGaInP第三覆层的连续外延的结构 在第一导电型GaAs半导体衬底上生长。 中间层在有源层中产生的光的轮廓内,并且包括具有小于第二包覆层和第三包层的带隙能量的带隙能量并且大于有源层的带隙能量的AlGaInP层 。 中间层具有多层结构,其中(Al x Ga 1-x)InP层(0≤x≤0.2)和(Al x Ga 1-x)InP层(0.5≤x≤1)交替地 层压。 通过向中间层添加少量Al,中间层的带隙能量变宽,以控制从有源层发射的光的吸收,并抑制激光振荡的阈值电流的增加。 由于中间层具有多层结构,因此实现了在剥离(100)衬底的蚀刻期间具有足够的蚀刻停止效果的半导体激光器件。