摘要:
A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要:
A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要:
A dielectric filter with an ultra hetero-axial structure is provided with open end-face electrodes. By increasing the capacitance between each open end-face electrode and an external conductor greater than that generated between the open end-face electrodes adjacent to each other, the inductive coupling between two resonators due to neighboring resonator holes is increased.
摘要:
A dielectric filter or a dielectric duplexer is provided which comprises a dielectric block in a substantially rectangular parallelepiped shape, having a pair of opposite parallel end-faces and plural sides extending between the paired opposite end-faces, one of the plural sides being a mounting face; plural resonator holes elongating through the inside of the dielectric block across the paired opposite end-faces; inner conductors provided on the inner walls of the plural resonator holes, respectively; an outer conductor provided on the outside of the dielectric block; input-output electrodes provided only on one of the paired opposite end-faces, separated from the outer conductor, and capacitance-coupled to the predetermined inner conductors, respectively; and conductive terminals for external connection, connected to the input-output electrodes, having at least portions thereof lying substantially in the same plane as the mounting face. In the dielectric filter or the dielectric duplexer, since input-output electrode are provided on the end-face of the dielectric block, not provided on the sides of the dielectric block, the deterioration of Q0, caused by the input-output electrodes, can be reduced. Accordingly, the insertion loss and the attenuation characteristics are improved.
摘要:
An integrated semiconductor laser-modulator device less affected by a fluctuating electric field due to modulating signals applied to the modulator has improved frequency characteristics. The integrated semiconductor laser-modulator includes an active layer, a beam waveguide layer having a bulk structure with a bandgap energy larger than that of the active layer but smaller than that of a laser beam absorption layer having a bulk structure, wherein waveguides of the laser and modulator are connected and aligned, and a cladding layer including a diffraction grating is disposed on top of or beneath the waveguides.
摘要:
The present invention provides a dielectric filter and a dielectric duplexer, each including a plurality of dielectric resonators. The dielectric filter and the dielectric duplexer each comprising: a dielectric block having a first surface and a second end surface opposite to each other; at least three resonator holes passing through the first end surface to the second end surface of the dielectric block; inner conductors disposed on the inner wall surfaces of the resonator holes; an outer conductor disposed on the external surface of the dielectric block; the outer conductor on the first end surface of the dielectric block being separated into an inner part and a peripheral part by a nonconductive portion; the inner part including the openings of at least three of the resonator holes adjacent to each other; a peripheral part being arranged around the inner part; and the inner part and the peripheral part being connected by a microinductance-generating means.
摘要:
A dielectric filter, includes a dielectric block including a plurality of elongated sub-blocks each having a pair of longitudinally opposing end faces and an outer surface, said sub-blocks being disposed adjacent one another; a plurality of longitudinally extending through-holes, at least one through-hole being formed between each corresponding pair of opposing end faces of the respective sub-blocks; a plurality of inner conductors, one inner conductor being formed on each of the inner surfaces of said plurality of through-holes, said plurality of inner conductors each having two opposing ends; an outer conductor formed on the outer surface of said dielectric block such that (i) the outer conductor is not electrically coupled to the respective ends of the inner conductor of every other sub-block such that the ends of those inner conductors are open-circuited, and (ii) the outer conductor is electrically coupled to the respective ends of the inner conductor of the remaining sub-blocks such that the ends of those inner conductors are short-circuited; a plurality of connection conductors through which respective parts of the inner conductors located between corresponding open-circuited opposing ends are connected to said outer conductor; and an electromagnetic coupling preventing structure formed between each adjacent pair of sub-blocks and extending from one end face of each of said sub-blocks toward a central part of said sub-blocks between the two opposing end faces, wherein said dielectric filter produces a band elimination transfer function over some frequencies and a pass transfer function over other frequencies in use.
摘要:
A dielectric resonator apparatus includes at least one dielectric coaxial resonator in a dielectric block of a dielectric material having first and second end surfaces, and a plurality of side surfaces. At least one cylindrical resonator hole is disposed so as to penetrate the dielectric block and an outer conductor is disposed on at least the first end surface and, the plurality of side surfaces. Further, at least one inner conductor is disposed in the resonator hole so that one end thereof located on the first end surface side is electrically insulated from the outer conductor, thereby constituting at least one dielectric coaxial resonator. A pair of input and output electrodes is disposed on at least one predetermined side surface of the dielectric block so as to be electrically insulated from the outer conductor and to be close to one end of the inner conductor located adjacent the first end surface. Furthermore, two penetrating holes are disposed so as to penetrate the dielectric block between a pair of input and output electrodes and the inner conductor, and two connection conductors for electrically connecting a pair of input and output electrodes to the inner conductor are disposed in the penetrating holes.
摘要:
A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要:
A dielectric filter with an ultra hetero-axial structure is provided with open end-face electrodes. By increasing the capacitance between each open end-face electrode and an external conductor greater than that generated between the open end-face electrodes adjacent to each other, the inductive coupling between two resonators due to neighboring resonator holes is increased.