公开(公告)号：US5757835A

公开(公告)日：1998-05-26

申请号：US778507

申请日：1997-01-03

申请人： Kenichi Ono ,  Hitoshi Tada

发明人： Kenichi Ono ,  Hitoshi Tada

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/32 ,  H01S5/209 ,  H01S5/3216 ,  H01S5/34326

摘要： A semiconductor laser device includes a structure in which a first conductivity AlGaInP first cladding layer, an active layer, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer are successively epitaxially grown on a first conductivity type GaAs semiconductor substrate. The intermediate layer is within a profile of light produced in the active layer and includes AlGaInP layers having a band gap energy smaller than the band gap energy of the second cladding layer and the third cladding layer and larger than the band gap energy of the active layer. The intermediate layer has a multi-layer structure in which (Al.sub.x Ga.sub.1-x)InP layers (0.ltoreq.x.ltoreq.0.2) and (Al.sub.x Ga.sub.1-x)InP layers (0.5.ltoreq.x.ltoreq.1) are alternatingly laminated. By adding a small amount of Al to the intermediate layer, the band gap energy of the intermediate layer is broadened to control absorption of light emitted from the active layer and an increase in the threshold current of laser oscillation is suppressed. Since the intermediate layer has a multi-layer structure, a semiconductor laser device with sufficient etch stopping effect during etching of an off (100) substrate is realized.

摘要翻译： 半导体激光器件包括其中第一导电AlGaInP第一包层，有源层，第二导电型AlGaInP第二覆层，第二导电型AlGaInP中间层和第二导电型AlGaInP第三覆层的连续外延的结构 在第一导电型GaAs半导体衬底上生长。 中间层在有源层中产生的光的轮廓内，并且包括具有小于第二包覆层和第三包层的带隙能量的带隙能量并且大于有源层的带隙能量的AlGaInP层 。 中间层具有多层结构，其中（Al x Ga 1-x）InP层（0≤x≤0.2）和（Al x Ga 1-x）InP层（0.5≤x≤1）交替地 层压。 通过向中间层添加少量Al，中间层的带隙能量变宽，以控制从有源层发射的光的吸收，并抑制激光振荡的阈值电流的增加。 由于中间层具有多层结构，因此实现了在剥离（100）衬底的蚀刻期间具有足够的蚀刻停止效果的半导体激光器件。

公开(公告)号：US07804871B2

公开(公告)日：2010-09-28

申请号：US12179627

申请日：2008-07-25

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

公开(公告)号：US07756180B2

公开(公告)日：2010-07-13

申请号：US11269627

申请日：2005-11-09

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。 大于0.0001且小于0.01的比E1 / E2。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

公开(公告)号：US07482898B2

公开(公告)日：2009-01-27

申请号：US11642934

申请日：2006-12-21

申请人： Masayuki Atokawa ,  Hitoshi Tada ,  Takayoshi Yui ,  Hideyuki Kato

发明人： Masayuki Atokawa ,  Hitoshi Tada ,  Takayoshi Yui ,  Hideyuki Kato

IPC分类号： H01P1/205 ,  H01P1/213

CPC分类号： H01P1/2056

摘要： A dielectric filter with an ultra hetero-axial structure is provided with open end-face electrodes. By increasing the capacitance between each open end-face electrode and an external conductor greater than that generated between the open end-face electrodes adjacent to each other, the inductive coupling between two resonators due to neighboring resonator holes is increased.

摘要翻译： 具有超异质轴结构的介质滤波器设置有开放的端面电极。 通过增加每个开放的端面电极和外部导体之间的电容大于彼此相邻的开放端面电极之间产生的电容，由于相邻的谐振器孔，两个谐振器之间的电感耦合增加。

公开(公告)号：US06507250B1

公开(公告)日：2003-01-14

申请号：US09374476

申请日：1999-08-13

申请人： Hitoshi Tada ,  Hideyuki Kato ,  Motoharu Hiroshima ,  Haruo Matsumoto

发明人： Hitoshi Tada ,  Hideyuki Kato ,  Motoharu Hiroshima ,  Haruo Matsumoto

IPC分类号： H01P1213

CPC分类号： H01P1/2056 ,  H01P1/2136

摘要： A dielectric filter or a dielectric duplexer is provided which comprises a dielectric block in a substantially rectangular parallelepiped shape, having a pair of opposite parallel end-faces and plural sides extending between the paired opposite end-faces, one of the plural sides being a mounting face; plural resonator holes elongating through the inside of the dielectric block across the paired opposite end-faces; inner conductors provided on the inner walls of the plural resonator holes, respectively; an outer conductor provided on the outside of the dielectric block; input-output electrodes provided only on one of the paired opposite end-faces, separated from the outer conductor, and capacitance-coupled to the predetermined inner conductors, respectively; and conductive terminals for external connection, connected to the input-output electrodes, having at least portions thereof lying substantially in the same plane as the mounting face. In the dielectric filter or the dielectric duplexer, since input-output electrode are provided on the end-face of the dielectric block, not provided on the sides of the dielectric block, the deterioration of Q0, caused by the input-output electrodes, can be reduced. Accordingly, the insertion loss and the attenuation characteristics are improved.

摘要翻译： 提供一种介质滤波器或介质双工器，其包括基本上为长方体形状的介质块，具有一对相对的平行端面和在所述一对相对端面之间延伸的多个侧面，所述多个侧面中的一个为安装 面对; 多个谐振器孔延伸穿过所述一对相对端面的所述介质块的内部; 分别设置在多个谐振器孔的内壁上的内部导体; 设置在介质块的外侧的外部导体; 输入输出电极仅设置在与外部导体分离的成对的相对端面中的一个上，并且电容耦合到预定的内部导体; 和用于外部连接的导电端子，连接到输入 - 输出电极，其至少部分基本上位于与安装面相同的平面中。 在介质滤波器或介质双工器中，由于输入输出电极设置在不设置在介质块的侧面的介质块的端面上，所以由输入 - 输出电极引起的Q0的劣化可以 减少 因此，插入损耗和衰减特性得到改善。

公开(公告)号：US06455338B1

公开(公告)日：2002-09-24

申请号：US09400531

申请日：1999-09-21

申请人： Kazuhisa Takagi ,  Hitoshi Tada ,  Tohru Takiguchi

发明人： Kazuhisa Takagi ,  Hitoshi Tada ,  Tohru Takiguchi

IPC分类号： H01L2120

CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2081

摘要： An integrated semiconductor laser-modulator device less affected by a fluctuating electric field due to modulating signals applied to the modulator has improved frequency characteristics. The integrated semiconductor laser-modulator includes an active layer, a beam waveguide layer having a bulk structure with a bandgap energy larger than that of the active layer but smaller than that of a laser beam absorption layer having a bulk structure, wherein waveguides of the laser and modulator are connected and aligned, and a cladding layer including a diffraction grating is disposed on top of or beneath the waveguides.

摘要翻译： 由于施加到调制器的调制信号而受波动电场影响较小的集成半导体激光调制器具有改善的频率特性。 集成半导体激光调制器包括有源层，具有体积结构的波导波导层，其带隙能量大于有源层的带隙能量，但小于具有体结构的激光束吸收层的带隙能量，其中激光波导 并且调制器被连接和对准，并且包括衍射光栅的包层设置在波导的顶部或下方。

公开(公告)号：US06177852B1

公开(公告)日：2001-01-23

申请号：US09314992

申请日：1999-05-20

申请人： Hitoshi Tada ,  Hideyuki Kato

发明人： Hitoshi Tada ,  Hideyuki Kato

IPC分类号： H01P120

CPC分类号： H01P1/2136 ,  H01P1/2056

摘要： The present invention provides a dielectric filter and a dielectric duplexer, each including a plurality of dielectric resonators. The dielectric filter and the dielectric duplexer each comprising: a dielectric block having a first surface and a second end surface opposite to each other; at least three resonator holes passing through the first end surface to the second end surface of the dielectric block; inner conductors disposed on the inner wall surfaces of the resonator holes; an outer conductor disposed on the external surface of the dielectric block; the outer conductor on the first end surface of the dielectric block being separated into an inner part and a peripheral part by a nonconductive portion; the inner part including the openings of at least three of the resonator holes adjacent to each other; a peripheral part being arranged around the inner part; and the inner part and the peripheral part being connected by a microinductance-generating means.

摘要翻译： 本发明提供一种介质滤波器和介质双工器，每个都包括多个介质谐振器。 介质滤波器和介质双工器各自包括：介质块，其具有彼此相对的第一表面和第二端面; 至少三个谐振器孔穿过第一端面到介质块的第二端面; 设置在谐振器孔的内壁表面上的内部导体; 布置在介质块的外表面上的外导体; 介质块的第一端面上的外导体被非导电部分分隔成内部部分和周边部分; 所述内部部分包括彼此相邻的所述谐振器孔中的至少三个的开口; 周围部分围绕内部部分布置; 并且内部部分和周边部分通过微电感产生装置连接。

公开(公告)号：US6023208A

公开(公告)日：2000-02-08

申请号：US260764

申请日：1999-03-02

申请人： Hitoshi Tada ,  Hiromi Ogura

发明人： Hitoshi Tada ,  Hiromi Ogura

IPC分类号： H01P1/205 ,  H01P7/04

CPC分类号： H01P1/2056

摘要： A dielectric filter, includes a dielectric block including a plurality of elongated sub-blocks each having a pair of longitudinally opposing end faces and an outer surface, said sub-blocks being disposed adjacent one another; a plurality of longitudinally extending through-holes, at least one through-hole being formed between each corresponding pair of opposing end faces of the respective sub-blocks; a plurality of inner conductors, one inner conductor being formed on each of the inner surfaces of said plurality of through-holes, said plurality of inner conductors each having two opposing ends; an outer conductor formed on the outer surface of said dielectric block such that (i) the outer conductor is not electrically coupled to the respective ends of the inner conductor of every other sub-block such that the ends of those inner conductors are open-circuited, and (ii) the outer conductor is electrically coupled to the respective ends of the inner conductor of the remaining sub-blocks such that the ends of those inner conductors are short-circuited; a plurality of connection conductors through which respective parts of the inner conductors located between corresponding open-circuited opposing ends are connected to said outer conductor; and an electromagnetic coupling preventing structure formed between each adjacent pair of sub-blocks and extending from one end face of each of said sub-blocks toward a central part of said sub-blocks between the two opposing end faces, wherein said dielectric filter produces a band elimination transfer function over some frequencies and a pass transfer function over other frequencies in use.

摘要翻译： 一种介质滤波器，包括：介质块，其包括多个细长子块，每个细长子块具有一对纵向相对的端面和外表面，所述子块彼此相邻设置; 多个纵向延伸的通孔，至少一个通孔形成在各个子块的相应的一对相对面之间; 多个内部导体，在所述多个通孔的每个内表面上形成一个内部导体，所述多个内部导体各自具有两个相对的端部; 形成在所述介质块的外表面上的外部导体，使得（i）外部导体不电耦合到每个其他子块的内部导体的相应端部，使得这些内部导体的端部开路 ，和（ii）外部导体电耦合到其余子块的内部导体的相应端部，使得这些内部导体的端部短路; 多个连接导体，位于相应的开路的相对端之间的内部导体的相应部分穿过该连接导体连接到所述外部导体; 以及电磁耦合防止结构，其形成在每个相邻的子块之间并且在每个所述子块的一个端面朝向所述两个相对端面之间的所述子块的中心部分延伸，其中所述介质滤波器产生 某些频率的频带消除传递函数和使用其他频率的传递函数。

公开(公告)号：US5629656A

公开(公告)日：1997-05-13

申请号：US317334

申请日：1994-10-04

申请人： Hitoshi Tada ,  Hideyuki Kato ,  Tatsuya Tsujiguchi

发明人： Hitoshi Tada ,  Hideyuki Kato ,  Tatsuya Tsujiguchi

IPC分类号： H01P1/205 ,  H01P5/08

CPC分类号： H01P1/2056

摘要： A dielectric resonator apparatus includes at least one dielectric coaxial resonator in a dielectric block of a dielectric material having first and second end surfaces, and a plurality of side surfaces. At least one cylindrical resonator hole is disposed so as to penetrate the dielectric block and an outer conductor is disposed on at least the first end surface and, the plurality of side surfaces. Further, at least one inner conductor is disposed in the resonator hole so that one end thereof located on the first end surface side is electrically insulated from the outer conductor, thereby constituting at least one dielectric coaxial resonator. A pair of input and output electrodes is disposed on at least one predetermined side surface of the dielectric block so as to be electrically insulated from the outer conductor and to be close to one end of the inner conductor located adjacent the first end surface. Furthermore, two penetrating holes are disposed so as to penetrate the dielectric block between a pair of input and output electrodes and the inner conductor, and two connection conductors for electrically connecting a pair of input and output electrodes to the inner conductor are disposed in the penetrating holes.

摘要翻译： 介质谐振器装置包括在具有第一和第二端面以及多个侧表面的电介质材料的介质块中的至少一个电介质同轴谐振器。 至少一个圆柱形谐振器孔被设置成穿透介电块，并且外部导体设置在至少第一端面和多个侧表面上。 此外，至少一个内部导体设置在谐振器孔中，使得位于第一端面侧的一端与外部导体电绝缘，从而构成至少一个电介质同轴谐振器。 一对输入和输出电极设置在介电块的至少一个预定侧表面上，以便与外部导体电绝缘并且靠近位于邻近第一端面的内部导体的一端。 此外，两个贯通孔被设置成穿过一对输入和输出电极和内部导体之间的介质块，并且将一对输入和输出电极电连接到内部导体的两个连接导体设置在穿透 孔。

公开(公告)号：US20080310473A1

公开(公告)日：2008-12-18

申请号：US12179627

申请日：2008-07-25

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/22 ,  H01S5/20

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。