公开(公告)号：US07855382B2

公开(公告)日：2010-12-21

申请号：US12725458

申请日：2010-03-17

Applicant: Hsiang-Lin Lin ,  Chun-Chieh Tsao

Inventor： Hsiang-Lin Lin ,  Chun-Chieh Tsao

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: G02F1/133555 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1248

Abstract: A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.

Abstract translation: 一种像素结构，包括栅极，栅极电介质层，具有设置在栅极上方的沟道区域的图案化半导体层，具有设置在栅极上方的蚀刻停止层和多个凸起的图案化电介质层，具有 提供反射像素电极，源极和漏极，外涂层电介质层和顺序地设置在基板上的透明像素电极。 源极和漏极分别覆盖沟道区域的部分。 反射像素电极连接漏极并覆盖凸块以形成不平坦的表面。 设置在由栅极，栅极电介质层，图案化半导体层，源极和漏极构成的晶体管上的外涂层电介质层具有暴露反射像素电极的一部分的接触开口。 透明像素电极通过接触开口电连接到反射像素电极。

公开(公告)号：US07816193B2

公开(公告)日：2010-10-19

申请号：US11964758

申请日：2007-12-27

Applicant: Hsiang-Lin Lin

Inventor： Hsiang-Lin Lin

IPC: H01L21/84

CPC classification number: H01L27/1248 ,  G02F2001/136231 ,  H01L27/1288 ,  H01L51/56 ,  H01L2227/323 ,  Y10S438/958

Abstract: A method for fabricating a pixel structure of a liquid crystal device is provided. The method comprises providing a substrate defining a thin film transistor (TFT) region and a display region thereon. An opaque conductive layer is formed on the TFT region, and a transparent pixel electrode is formed on the display region. A patterned photoresist passivation layer is formed by backside exposure process on the TFT region, wherein the opaque conductive layer serves as the photo-mask during the backside exposure process. The photoresist passivation layer is subjected to a middle bake process to be reflowed, resulting in a complete covering of the opaque conductive layer.

Abstract translation: 提供一种用于制造液晶装置的像素结构的方法。 该方法包括提供限定薄膜晶体管（TFT）区域的基板和其上的显示区域。 在TFT区域上形成不透明导电层，在显示区域上形成透明像素电极。 在TFT区域上通过背面曝光工艺形成图案化的光致抗蚀剂钝化层，其中不透明导电层在背面曝光工艺期间用作光掩模。 对光致抗蚀剂钝化层进行中间烘烤处理以回流，导致不透明导电层的完全覆盖。

公开(公告)号：US20100187537A1

公开(公告)日：2010-07-29

申请号：US12436221

申请日：2009-05-06

Applicant: Hsiang-Lin Lin

Inventor： Hsiang-Lin Lin

IPC: H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC classification number: H01L27/124 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.

Abstract translation: 提供薄膜晶体管阵列结构及其制造方法。 薄膜晶体管阵列结构包括基板，其包括过渡区域和焊盘区域。 图案化的第一金属层形成在基板上，其中图案化的第一金属层包括设置在过渡区域中的数据连接线，以及设置在焊盘区域中的数据焊盘和栅极焊盘。 图案化的第一绝缘层形成在图案化的第一金属层上。 图案化的第一绝缘层至少限定了栅极焊盘上的第一开口，数据焊盘上的第二开口和过渡区域中的第三开口，以便简化后续处理以提高产量。

公开(公告)号：US07705950B2

公开(公告)日：2010-04-27

申请号：US11382059

申请日：2006-05-08

Applicant: Hsiang-Lin Lin

Inventor： Hsiang-Lin Lin

IPC: G02F1/1343

CPC classification number: G02F1/134309 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13606

Abstract: A liquid crystal display includes: a substrate; a plurality of pixel electrodes formed on the substrate and arranged corresponding to a pixel array; a first data line and a second data line formed on the substrate; a plurality of scan lines formed on the substrate, in which the scan lines cross the first data line and the second data line; a first branch electrode electrically connects a pixel electrode and partially overlaps the first data line; and a second branch electrode electrically connects the pixel electrode and partially overlaps the second data line, in which the first branch electrode and the second branch electrode are disposed opposite to the pixel electrode.

Abstract translation: 液晶显示器包括：基板; 多个像素电极，其形成在所述基板上并且对应于像素阵列排列; 形成在所述基板上的第一数据线和第二数据线; 形成在所述基板上的扫描线，其中所述扫描线与所述第一数据线和所述第二数据线交叉; 第一分支电极电连接像素电极并与第一数据线部分重叠; 并且第二分支电极电连接像素电极，并且与第二数据线部分重叠，其中第一分支电极和第二分支电极与像素电极相对设置。

公开(公告)号：US20090256164A1

公开(公告)日：2009-10-15

申请号：US12190887

申请日：2008-08-13

Applicant: Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

Inventor： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

IPC: H01L33/00 ,  H01L21/30

CPC classification number: H01L27/1288 ,  H01L27/124

Abstract: An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate.

Abstract translation: 提供一种有源器件阵列衬底及其制造方法。 根据本发明，诸如薄膜晶体管，栅极线，栅极焊盘，数据线，数据焊盘和存储电极之类的阵列基板的元件通过形成图案化的第一金属层，绝缘层，图案化 半导体层和图案化金属多层。 此外，本发明使用选择性蚀刻某些层的方法。 使用上述方法，本发明的阵列基板具有一些具有欠切割结构的层，因此可以减少在阵列基板的制造中涉及的耗时且复杂的掩模蚀刻工艺的数量。 本发明提供了用于制造阵列基板的相对简单且省时的方法。

公开(公告)号：US20090086352A1

公开(公告)日：2009-04-02

申请号：US12135215

申请日：2008-06-09

Applicant: Chun-Chieh Tsao ,  Hsiang-Lin Lin

Inventor： Chun-Chieh Tsao ,  Hsiang-Lin Lin

IPC: G02B5/20 ,  G02B1/10

CPC classification number: G02B5/201 ,  G02B5/223

Abstract: A color filter structure includes a plurality of hydrophobic light-shielding rows for a black matrix, and a color filter layer. Each hydrophobic light-shielding row has a plurality of light-shielding structures that have an individual space for accommodating the color filter layer and are arranged in series. In addition, each individual space of the light-shielding structures is closed, and this light-shielding structure involves at least one hydrophobic valve so as to provide a hydrophobic force.

Abstract translation: 滤色器结构包括用于黑矩阵的多个疏水性遮光行和滤色器层。 每个疏水性遮光行具有多个遮光结构，其具有用于容纳滤色器层的单独空间并串联布置。 此外，遮光结构的每个单独的空间是封闭的，并且该遮光结构涉及至少一个疏水阀以提供疏水力。

公开(公告)号：US20080231778A1

公开(公告)日：2008-09-25

申请号：US12017176

申请日：2008-01-21

Applicant: Chun-Chieh Tsao ,  Hsiang-Lin Lin

Inventor： Chun-Chieh Tsao ,  Hsiang-Lin Lin

IPC: G02F1/1339 ,  G02F1/1335

CPC classification number: G02F1/133516 ,  G02F1/133512

Abstract: A color filter and a black matrix thereof are provided. The black matrix disposed on the substrate comprises a frame that defines a pixel area for accommodating color filter inks when performing the ink-jet process, and a spacer disposed in each of the pixels for preventing inks from overflowing to adjacent pixel areas and improving the flatness of the formed color filter layer.

Abstract translation: 提供滤色器及其黑矩阵。 设置在基板上的黑色矩阵包括框架，该框架在执行喷墨处理时限定用于容纳滤色器墨水的像素区域，以及设置在每个像素中的间隔物，用于防止墨水溢出到相邻像素区域并提高平坦度 形成的滤色器层。

公开(公告)号：US08305508B2

公开(公告)日：2012-11-06

申请号：US12507935

申请日：2009-07-23

Applicant: Hsiang-Lin Lin

Inventor： Hsiang-Lin Lin

IPC: G02F1/136

CPC classification number: H01L27/12 ,  H01L27/124 ,  H01L27/1248

Abstract: A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.

Abstract translation: 像素结构包括第一图案化金属层，栅极绝缘层，半导体沟道层，第二图案化金属层，钝化层和导电层。 第二图案化金属层的栅极线通过导电层电连接到第一图案化金属层的栅极延伸电极。 第二图案化金属层的源电极通过导电层电连接到第一图案化金属层的第二数据线段。 本文还公开了一种用于制造像素结构的方法。

公开(公告)号：US08059236B2

公开(公告)日：2011-11-15

申请号：US11707577

申请日：2007-02-15

Applicant: Hsiang-Lin Lin ,  Chun-Chieh Tsao

Inventor： Hsiang-Lin Lin ,  Chun-Chieh Tsao

IPC: G02F1/1335 ,  G02F1/1333

CPC classification number: G03F7/40 ,  G02F1/133504 ,  G02F1/133555 ,  G02F2201/123 ,  G03F7/0007 ,  H01R13/6675 ,  H02J7/0068 ,  Y10T307/625 ,  Y10T428/1068

Abstract: A method for producing a light reflecting structure in a transflective or reflective liquid crystal display uses one or two masks for masking a photoresist layer in a back-side exposing process. The pattern on the masks is designed to produce rod-like structures or crevices and holes on exposed and developed photoresist layer. After the exposed photoresist is developed, a heat treatment process or a UV curing process is used to soften the photoresist layer so that the reshaped surface is more or less contiguous but uneven. A reflective coating is then deposited on the uneven surface. One or more intermediate layers can be made between the masks, between the lower mask and the substrate, and between the upper masks and the photoresist layers. The masks and the intermediate layers can be made in conjunction with the fabrication of the liquid crystal display panel.

Abstract translation: 在半反射或反射型液晶显示器中制造光反射结构的方法使用一个或两个掩模来掩模背面曝光工艺中的光致抗蚀剂层。 掩模上的图案被设计成在曝光和显影的光致抗蚀剂层上产生棒状结构或缝隙和孔。 曝光的光致抗蚀剂显影后，使用热处理工艺或UV固化工艺来软化光致抗蚀剂层，使得整形表面或多或少地连续但不均匀。 然后将反射涂层沉积在不平坦表面上。 可以在掩模之间，下掩模和基板之间以及上掩模和光致抗蚀剂层之间形成一个或多个中间层。 掩模和中间层可以与液晶显示面板的制造相结合。

公开(公告)号：US08048698B2

公开(公告)日：2011-11-01

申请号：US12436221

申请日：2009-05-06

Applicant: Hsiang-Lin Lin

Inventor： Hsiang-Lin Lin

IPC: H01L21/00

CPC classification number: H01L27/124 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.

Abstract translation: 提供薄膜晶体管阵列结构及其制造方法。 薄膜晶体管阵列结构包括基板，其包括过渡区域和焊盘区域。 图案化的第一金属层形成在基板上，其中图案化的第一金属层包括设置在过渡区域中的数据连接线，以及设置在焊盘区域中的数据焊盘和栅极焊盘。 图案化的第一绝缘层形成在图案化的第一金属层上。 图案化的第一绝缘层至少限定了栅极焊盘上的第一开口，数据焊盘上的第二开口和过渡区域中的第三开口，以便简化后续处理以提高产量。