利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

186 条记录 (耗时 0.05 秒)

    Nanometer-sized carrier medium
    61.
    发明授权
    Nanometer-sized carrier medium 有权
    纳米级载体介质

    公开(公告)号：US07189417B2

    公开(公告)日：2007-03-13

    申请号：US10427242

    申请日：2003-05-01

    申请人： I-Wei Chen ,  Hoon Choi

    发明人： I-Wei Chen ,  Hoon Choi

    IPC分类号： A61K9/50

    CPC分类号： A61K49/0039 ,  A61K9/167 ,  A61K9/5115 ,  A61K9/5192 ,  A61K38/00 ,  A61K49/0093 ,  Y10S977/773 ,  Y10S977/776 ,  Y10S977/831

    摘要： The present invention relates to a colloidal dispersion of amine-terminated silica particles having a narrowly controlled size range in an aqueous phase for use in diagnostic imaging, drug delivery and gene therapy, as well as methods for preparing surface-modified silica particles suitable for use in an aqueous colloidal carrier medium, for preparing a diagnostic or therapeutic agent for targeted delivery to specific anatomical structures of a patient, and for performing a diagnostic or therapeutic procedure by administration to a patient of at least one diagnostic or therapeutic agent coupled with a colloidal dispersion.

    摘要翻译： 本发明涉及用于诊断成像，药物递送和基因治疗的水相中具有狭窄控制尺寸范围的胺封端二氧化硅颗粒的胶态分散体，以及用于制备适于使用的表面改性二氧化硅颗粒的方法 在水性胶体载体介质中，用于制备用于靶向递送至患者的特定解剖结构的诊断或治疗剂，并且用于通过向患者施用至少一种诊断或治疗剂与胶体结合来进行诊断或治疗程序 分散。

    Method of making PNA oligomers
    62.
    发明授权
    Method of making PNA oligomers 有权
    制备PNA低聚物的方法

    公开(公告)号：US07179896B2

    公开(公告)日：2007-02-20

    申请号：US11182936

    申请日：2005-07-15

    申请人： Sung Kee Kim ,  Hyunil Lee ,  Jong Chan Lim ,  Hoon Choi ,  Jae Hoon Jeon ,  Sang Youl Ahn ,  Sung Hee Lee ,  Won Jun Yoon

    发明人： Sung Kee Kim ,  Hyunil Lee ,  Jong Chan Lim ,  Hoon Choi ,  Jae Hoon Jeon ,  Sang Youl Ahn ,  Sung Hee Lee ,  Won Jun Yoon

    IPC分类号： C07H21/02 ,  C07H21/04 ,  C07H21/00

    CPC分类号： C07D417/04 ,  C07B2200/11 ,  C07D277/80 ,  C07D417/12 ,  C07D417/14 ,  Y02P20/55

    摘要： This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R′; J is sulfur or oxygen; R′, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrile, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural α-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

    摘要翻译： 本申请涉及用于制备PNA（肽核酸）寡聚体的通式（I）的单体，并提供合成预定义的序列PNA寡聚体和随机序列PNA寡聚体的方法：其中E为氮或C-R' ; J为硫或氧; R'，R 1，R 2，R 3，R 4独立地是H，卤素，烷基，硝基，腈，烷氧基，卤代烷基，卤代烷氧基，苯基或卤代苯基，R 5是H或被保护或未被保护的天然或非天然α- 氨基酸; 并且B是天然或非天然核碱基，其中当所述核碱基具有环外氨基功能时，所述功能由在硫醇存在下对酸不稳定但对弱至中碱稳定的保护基保护。

    Heat reflector and substrate processing apparatus comprising the same
    63.
    发明申请
    Heat reflector and substrate processing apparatus comprising the same 有权
    热反射器和包括其的基板处理装置

    公开(公告)号：US20060249695A1

    公开(公告)日：2006-11-09

    申请号：US11405563

    申请日：2006-04-18

    申请人： Hoon Choi

    发明人： Hoon Choi

    IPC分类号： A61N5/00

    CPC分类号： H01L21/67115 ,  F27B5/04 ,  F27B17/0025 ,  Y10T428/24273

    摘要： A substrate processing apparatus includes a process chamber including upper and lower quartz walls, a substrate support disposed in the process chamber, radiant heaters respectively provided above and below the quartz walls of the chamber, and heat reflectors disposed outside the process chamber for reflecting heat towards the substrate support. Each of the heat reflectors has heating has a first thermally reflective section oriented to reflect the heat towards an outer peripheral region of the substrate support and a second thermally reflective section oriented to reflect the heat towards a central region of the substrate support. Each heat reflector also has a reflection angle adjusting mechanism by which an angle at which the second thermally reflective section reflects heat can be adjusted. The angle is adjusted depending on the temperature distribution across the substrate so that the substrate can be processed uniformly.

    摘要翻译： 基板处理装置包括具有上，下石英壁的处理室，设置在处理室中的基板支撑件，分别设置在室的石英壁上方和下方的辐射加热器，以及设置在处理室外部的热反射器，用于将热量反射 衬底支撑。 每个热反射器具有加热，其具有第一热反射部分，其被定向成朝着基板支撑件的外周区域反射热量;以及第二热反射部件，其被定向成朝着基板支撑件的中心区域反射热量。 每个热反射器还具有反射角调节机构，通过该反射角调节机构可以调节第二热反射部分反射热量的角度。 根据衬底上的温度分布来调节角度，使得可以均匀地处理衬底。

    PNA monomer and precursor
    65.
    发明申请
    PNA monomer and precursor 有权
    PNA单体和前体

    公开(公告)号：US20050250786A1

    公开(公告)日：2005-11-10

    申请号：US11183025

    申请日：2005-07-15

    申请人： Sung Kim ,  Hyunil Lee ,  Jong Lim ,  Hoon Choi ,  Jae Jeon ,  Sahn Ahn ,  Sung Lee ,  Won Yoon

    发明人： Sung Kim ,  Hyunil Lee ,  Jong Lim ,  Hoon Choi ,  Jae Jeon ,  Sahn Ahn ,  Sung Lee ,  Won Yoon

    IPC分类号： C12N15/09 ,  A61K31/513 ,  A61K31/52 ,  C07D277/80 ,  C07D405/12 ,  C07D417/04 ,  C07D417/12 ,  C07D417/14 ,  C07D473/02 ,  C07D473/18 ,  C07D473/32 ,  C07D473/34 ,  C07D43/14

    CPC分类号： C07D417/04 ,  C07B2200/11 ,  C07D277/80 ,  C07D417/12 ,  C07D417/14 ,  Y02P20/55

    摘要： This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R′; J is sulfur or oxygen; R′, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrite, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural α-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

    摘要翻译： 本申请涉及用于制备PNA（肽核酸）寡聚体的通式（I）的单体，并提供合成预定义的序列PNA寡聚体和随机序列PNA寡聚体的方法：其中E为氮或C-R' ; J为硫或氧; R'，R 1，R 2，R 3，R 4独立地为H，卤素，烷基，硝基，亚硝酸根，烷氧基，卤代烷基，卤代烷氧基，苯基或卤代苯基，R 5为H或保护或未保护的天然或非天然α- 氨基酸; 并且B是天然或非天然核碱基，其中当所述核碱基具有环外氨基功能时，所述功能受到在硫醇存在下对酸不稳定但对弱至中碱稳定的保护基保护。

    Fibrous composite for tissue engineering
    66.
    发明申请
    Fibrous composite for tissue engineering 有权
    组织工程纤维复合材料

    公开(公告)号：US20050226904A1

    公开(公告)日：2005-10-13

    申请号：US10507059

    申请日：2003-03-14

    申请人： Hoon Choi ,  I-Wei Chen

    发明人： Hoon Choi ,  I-Wei Chen

    IPC分类号： A61F2/00 ,  A61F2/02 ,  A61K9/70 ,  A61L27/18 ,  A61L27/44 ,  C12N20060101

    CPC分类号： A61L27/56 ,  A61L27/025 ,  A61L27/18 ,  A61L27/446 ,  A61L27/58 ,  C08L67/04

    摘要： Provided are fibrous composites prepared by methods of the present invention, comprising oxides and biodegradable polymers, in which the fibers are made of aerogel-like oxide materials having nanometer-sized pores. The fibrous composition advantageously has, at least, the following characteristics: (i) a very high nanoporous surface area, which also permits nucleation of crystallites; (ii) mesoporous/macroporous interspacial networks between the fibers, providing high bioactivity and a high transport rate; (iii) macropores for natural one-like tissue growth; (iv) good mechanical properties for handling and for implant support; and (v) biodegradability for implant dissolution and time-variable mechanical properties. Further provided are methods for using the bioactive biodegradable fibrous composites as osteogenic composite materials for tissue engineering, tissue re-growth, bone implants, and bone repair, and/or for the delivery of drugs or therapeutic compounds.

    摘要翻译： 提供了通过本发明的方法制备的纤维复合材料，其包括氧化物和可生物降解的聚合物，其中纤维由具有纳米尺寸孔的气凝胶状氧化物材料制成。 纤维组合物有利地至少具有以下特征：（i）非常高的纳米孔表面积，其也允许微晶成核; （ii）纤维之间的介孔/大孔间隙网络，提供高生物活性和高传输速率; （iii）用于天然单样组织生长的大孔; （iv）用于处理和植入支持的良好的机械性能; 和（v）植入物溶解和时变机械性能的生物降解性。 还提供了使用生物活性生物可降解纤维复合材料作为用于组织工程，组织再生长，骨植入物和骨修复，和/或递送药物或治疗化合物的成骨复合材料的方法。

    Metal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdown
    68.
    发明授权
    Metal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdown 失效
    金属氧化物半导体电容器在工作范围内具有均匀的C-V特性，并降低对绝缘体击穿的敏感性

    公开(公告)号：US5793074A

    公开(公告)日：1998-08-11

    申请号：US684464

    申请日：1996-07-19

    申请人： Hoon Choi ,  Seung-Cheol Oh

    发明人： Hoon Choi ,  Seung-Cheol Oh

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L29/94 ,  H01L27/108

    CPC分类号： H01L29/94

    摘要： A MOS capacitor has uniform C-V capacitance characteristics across an operating voltage range and has reduced susceptibility to insulator breakdown and includes a semiconductor substrate of first conductivity type, a region of insulating material on an upper surface of the substrate and a well region of second conductivity type extending adjacent the region of insulating material. The well region is spaced from the region of insulating material so that the substrate extends to the upper surface therebetween. A source region of second conductivity type is formed in the well region. An insulating layer is formed on the source region and extends over the region of insulating material. A first electrode is formed on the insulating layer and a second electrode is formed on the source region. The capacitor also includes a P-N junction established between the source region of second conductivity type and the region of insulating material beneath the insulating layer. This P-N junction provides the capacitor with substantially uniform capacitance characteristics when a voltage is applied between the first electrode and the second electrode. Furthermore, because some of the voltage differential is established across the P-N junction during operation, the electric field at the corner of the region of insulating material and the insulating layer is reduced.

    摘要翻译： MOS电容器在工作电压范围内具有均匀的CV电容特性，并且降低了对绝缘体击穿的敏感性，并且包括第一导电类型的半导体衬底，衬底上表面上的绝缘材料区域和第二导电类型的阱区 在绝缘材料的区域附近延伸。 阱区域与绝缘材料的区域隔开，使得衬底延伸到它们之间的上表面。 在阱区中形成第二导电类型的源区。 绝缘层形成在源极区域上并在绝缘材料的区域上延伸。 第一电极形成在绝缘层上，第二电极形成在源极区上。 电容器还包括在第二导电类型的源极区域和绝缘层下方的绝缘材料区域之间建立的P-N结。 当在第一电极和第二电极之间施加电压时，该P-N结为电容器提供基本均匀的电容特性。 此外，由于在工作期间跨越P-N结建立了一些电压差，所以绝缘材料区域和绝缘层的拐角处的电场减小。

    Integrated circuits including power supply boosters and methods of operating same
    69.
    发明授权
    Integrated circuits including power supply boosters and methods of operating same 失效
    集成电路，包括电源增压器和操作方法

    公开(公告)号：US5754075A

    公开(公告)日：1998-05-19

    申请号：US649427

    申请日：1996-05-16

    申请人： Seung-Cheol Oh ,  Hoon Choi

    发明人： Seung-Cheol Oh ,  Hoon Choi

    IPC分类号： G11C11/407 ,  G11C5/14 ,  G11C8/08 ,  G05F1/10

    CPC分类号： G11C5/145 ,  G11C8/08

    摘要： An integrated circuit provides a power supply voltage, a first boosted voltage, and a second boosted voltage which is preferably equal to or greater than the first boosted voltage, to the integrated circuit transistors, such that the integrated circuit transistors operate using the power supply voltage, the first boosted voltage and the second boosted voltage. The integrated circuit includes a first boosting circuit which boosts the power supply voltage to a first boosted voltage and a second boosting circuit which boosts the power supply voltage to a second boosted voltage. The first boosting circuit is preferably responsive to application of the power supply voltage to the integrated circuit and the second boosting circuit is preferably responsive to application of the power supply voltage to the integrated circuit and to an enable signal. Preferably, the first boosting circuit applies the first boosted voltage to the bulk region of selected PMOS transistors in the integrated circuit and the second boosting circuit applies the second boosting voltage to the source regions of selected PMOS transistors. In one embodiment, the first and second boosted voltages are applied to the word line driver of an integrated circuit memory device such that the second boosted voltage is applied to the source of the word line driver PMOS transistors in response to a row address strobe signal. High speed operations are thereby provided with reduced susceptibility to bridging defect errors.

    摘要翻译： 集成电路向集成电路晶体管提供优选等于或大于第一升压电压的电源电压，第一升压电压和第二升压电压，使得集成电路晶体管使用电源电压 ，第一升压电压和第二升压电压。 集成电路包括将电源电压升高到第一升压电压的第一升压电路和将电源电压升高到第二升压电压的第二升压电路。 第一升压电路优选地响应于向集成电路施加电源电压，并且第二升压电路优选地响应于将电源电压施加到集成电路和使能信号。 优选地，第一升压电路将第一升压电压施加到集成电路中所选择的PMOS晶体管的体区，并且第二升压电路将第二升压电压施加到所选PMOS晶体管的源极区。 在一个实施例中，第一和第二升压电压被施加到集成电路存储器件的字线驱动器，使得响应于行地址选通信号将第二升压电压施加到字线驱动器PMOS晶体管的源极。 因此，提供了高速度操作，降低了对桥接缺陷错误的敏感性。