公开(公告)号：US08053345B2

公开(公告)日：2011-11-08

申请号：US12773216

申请日：2010-05-04

申请人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L21/3205 ,  H01L21/44

CPC分类号： H01L29/66462

摘要： Provided is a method for fabricating a field effect transistor. In the method, an active layer and a capping layer are formed on a substrate. A source electrode and a drain electrode is formed on the capping layer. A dielectric interlayer is formed on the substrate, and resist layers having first and second openings with asymmetrical depths are formed on the dielectric interlayer between the source electrode and the drain electrode. The first opening exposes the dielectric interlayer, and the second opening exposes the lowermost of the resist layers. The dielectric interlayer in the bottom of the first opening and the lowermost resist layer under the second opening are simultaneously removed to expose the capping layer to the first opening and expose the dielectric interlayer to the second opening. The capping layer of the first opening is removed to expose the active layer. A metal layer is deposited on the substrate to simultaneously form a gate electrode and a field plate in the first opening and the second opening. The resist layers are removed to lift off the metal layer on the resist layers.

摘要翻译： 提供了一种用于制造场效应晶体管的方法。 在该方法中，在基板上形成有源层和覆盖层。 源极电极和漏电极形成在覆盖层上。 在基板上形成电介质中间层，在源电极和漏极之间的电介质层间形成有具有不对称深度的第一和第二开口的抗蚀剂层。 第一开口露出电介质中间层，第二开口露出最低层的抗蚀剂层。 同时除去第一开口底部的电介质中间层和第二开口下面的最下面的抗蚀剂层，以将覆盖层暴露于第一开口，并将电介质中间层暴露于第二开口。 去除第一开口的覆盖层以暴露活性层。 金属层沉积在基板上，以在第一开口和第二开口中同时形成栅电极和场板。 去除抗蚀剂层以剥离抗蚀剂层上的金属层。

公开(公告)号：US20110037078A1

公开(公告)日：2011-02-17

申请号：US12847174

申请日：2010-07-30

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L31/12

CPC分类号： H01L25/167 ,  G02B6/124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

摘要翻译： 提供了一种光互连装置。 光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出​​光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

公开(公告)号：US20090239328A1

公开(公告)日：2009-09-24

申请号：US12428575

申请日：2009-04-23

申请人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC分类号： H01L21/77 ,  H01L21/329 ,  H01L31/0304

CPC分类号： H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

摘要翻译： 一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。

公开(公告)号：US07324567B2

公开(公告)日：2008-01-29

申请号：US11017654

申请日：2004-12-22

申请人： Young Ho Kim ,  Eun Soo Nam ,  Kyoung Ik Cho ,  Bo Woo Kim ,  Myung Sook Oh

发明人： Young Ho Kim ,  Eun Soo Nam ,  Kyoung Ik Cho ,  Bo Woo Kim ,  Myung Sook Oh

IPC分类号： H01S3/30

CPC分类号： H01S3/067 ,  H01S3/0675 ,  H01S3/07 ,  H01S3/0809 ,  H01S3/082 ,  H01S3/1055

摘要： Provided is a millimeter-wave band frequency optical oscillator that can be used as an oscillation frequency signal source for a millimeter-wave forwarded to wireless subscribers from a base station of a millimeter-wave wireless subscriber communication system for a next generation (e.g., fifth generation) ultra-high speed wireless internet service. A pair of an optical fiber amplifier and an optical fiber grating mirror is connected to each of input/output ports of a loop mirror in parallel, so that a dual mode laser resonator is formed which can make simultaneous oscillation in two laser modes suitable for each wavelength. Accordingly, it is possible to obtain a light source that is modulated to a ultra-high frequency (over 60 GHz) by a beat phenomenon between the two laser modes.

摘要翻译： 提供了一种毫米波段频率光学振荡器，其可以用作从用于下一代的毫米波无线用户通信系统的基站转发到无线用户的毫米波的振荡频率信号源（例如，第五 一代）超高速无线互联网服务。 一对光纤放大器和光纤光栅反射镜并联连接到环形反射镜的每个输入/输出端口，从而形成双模式激光谐振器，其可以在适合于每个激光模式的两种激光模式中同时振荡 波长。 因此，可以通过两种激光模式之间的拍子现象来获得被调制到超高频（超过60GHz）的光源。

公开(公告)号：US07297976B2

公开(公告)日：2007-11-20

申请号：US11282339

申请日：2005-11-18

申请人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

IPC分类号： H01L29/06

CPC分类号： H01L31/18 ,  B82Y20/00 ,  G02F1/017

摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

摘要翻译： 提供了一种光电（OE）发射器集成电路（IC）及其使用选择性生长工艺制造它的方法。 在OE发射机IC中，包括双异质结双极晶体管（DHBT）的驱动电路并放大接收的电信号以驱动电吸收（EA）调制器，并且具有多量子阱（MQW）吸收层的EA调制器是 在半绝缘基板上集成为单芯片。 EA调制器的MQW吸收层和DHBT的MQW插入层使用选择性MOCVD生长工艺彼此形成为不同的厚度。

公开(公告)号：US07264987B2

公开(公告)日：2007-09-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。