公开(公告)号：US20050073619A1

公开(公告)日：2005-04-07

申请号：US10687759

申请日：2003-10-20

申请人： Yu-Cheng Chen ,  Chi-Lin Chen

发明人： Yu-Cheng Chen ,  Chi-Lin Chen

IPC分类号： G09F9/30 ,  G02F1/1362 ,  H01L23/522 ,  H01L27/12 ,  G02F1/136

CPC分类号： H01L27/12 ,  G02F1/136286 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-layered complementary wire structure and a manufacturing method thereof are disclosed, comprising a first wire and a second wire. Each of the first and the second wires comprises a main line and a plurality of branch lines located in a different layer from the main line. A plurality contact holes are formed in an insulating layer between the first wire and the second wire to connect the main line of the first wire and the branch lines of the first wire, and connect the main line of the second wire and the branch lines of the second wire. The main line of the first wire is insulated and crossed with the main line of the second wire. The main line of the first wire and the branch lines of the second wire are insulated with each other and located in the same layer. The main line of the second wire and the branch lines of the first wire are insulated with each other and located in the same layer.

摘要翻译： 公开了一种多层互补线结构及其制造方法，包括第一线和第二线。 第一和第二导线中的每一个包括主线和位于与主线不同的层中的多个分支线。 在第一线和第二线之间的绝缘层中形成多个接触孔，以连接第一线的主线和第一线的分支线，并将第二线的主线和 第二根线。 第一根导线的主线绝缘并与第二根导线的主线交叉。 第一线的主线和第二线的分支线彼此绝缘并位于同一层中。 第二线的主线和第一线的分支线彼此绝缘并位于同一层中。

公开(公告)号：US20050048407A1

公开(公告)日：2005-03-03

申请号：US10673326

申请日：2003-09-30

申请人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

发明人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1288

摘要： A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

摘要翻译： 制造LCD阵列面板的方法公开了在第一掩模处理期间形成栅电极布线，透明导电电极和存储容量的第一电极。 然后，选择性沉积法用于处理第一金属布线的生长。 因此，这可以减少掩模处理的数量。 此外，利用光刻胶剥离工序进行金属蒸镀，以在制造工序中实现用于后续传输线的第二金属布线的布局。 最后，钝化层沉积的过程用于实现用于LCD的TFT阵列面板的相关电路。 用于制造电路的LCD的TFT阵列面板可以简化制造工艺并降低成本。