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    Method of manufacturing a TFT array panel for a LCD
    1.
    发明申请
    Method of manufacturing a TFT array panel for a LCD 有权
    制造液晶显示器用TFT阵列面板的方法

    公开(公告)号：US20050048407A1

    公开(公告)日：2005-03-03

    申请号：US10673326

    申请日：2003-09-30

    申请人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    发明人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

    CPC分类号： G02F1/1368 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1288

    摘要： A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

    摘要翻译： 制造LCD阵列面板的方法公开了在第一掩模处理期间形成栅电极布线，透明导电电极和存储容量的第一电极。 然后，选择性沉积法用于处理第一金属布线的生长。 因此，这可以减少掩模处理的数量。 此外，利用光刻胶剥离工序进行金属蒸镀，以在制造工序中实现用于后续传输线的第二金属布线的布局。 最后，钝化层沉积的过程用于实现用于LCD的TFT阵列面板的相关电路。 用于制造电路的LCD的TFT阵列面板可以简化制造工艺并降低成本。

    Method of manufacturing a TFT array panel for a LCD
    2.
    发明授权
    Method of manufacturing a TFT array panel for a LCD 有权
    制造液晶显示器用TFT阵列面板的方法

    公开(公告)号：US07211371B2

    公开(公告)日：2007-05-01

    申请号：US10673326

    申请日：2003-09-30

    申请人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    发明人： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    IPC分类号： G03F7/00

    CPC分类号： G02F1/1368 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1288

    摘要： A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

    摘要翻译： 制造LCD阵列面板的方法公开了在第一掩模处理期间形成栅电极布线，透明导电电极和存储容量的第一电极。 然后，选择性沉积法用于处理第一金属布线的生长。 因此，这可以减少掩模处理的数量。 此外，利用光刻胶剥离工序进行金属蒸镀，以在制造工序中实现用于后续传输线的第二金属布线的布局。 最后，钝化层沉积的过程用于实现用于LCD的TFT阵列面板的相关电路。 用于制造电路的LCD的TFT阵列面板可以简化制造工艺并降低成本。

    Method of fabricating thin film transistor TFT array
    3.
    发明申请
    Method of fabricating thin film transistor TFT array 有权
    制造薄膜晶体管TFT阵列的方法

    公开(公告)号：US20050059190A1

    公开(公告)日：2005-03-17

    申请号：US10673325

    申请日：2003-09-30

    申请人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    发明人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    IPC分类号： H01L29/423 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L27/124 ,  H01L27/1255

    摘要： A method of fabricating thin film transistor TFT array discloses ions of desired-plated metal and the graphs of the desired-plated area are made by oxidation-reduction materials processes ion replacement for implementing the metal wiring layout of the TFT-LCDs. This, therefore, can overcome the problem of uneasy metal etching thereto achieves the purpose of an automatic alignment. The method uses the ability of the oxidation-reduction reaction to implement the replacement for alternating the lithography etching process in the metal wiring layout as presented in the traditional technique.

    摘要翻译： 制造薄膜晶体管TFT阵列的方法公开了所需电镀金属的离子，并且通过氧化还原材料制造所需电镀区域的图形来处理用于实现TFT-LCD的金属布线布局的离子替换。 因此，能够克服金属蚀刻不牢的问题，能够实现自动对准的目的。 该方法使用氧化还原反应的能力来实现在传统技术中呈现的金属布线布局中交替光刻蚀刻工艺的替代。

    Manufacturing method for a TFT electrode for preventing metal layer diffusion
    5.
    发明授权
    Manufacturing method for a TFT electrode for preventing metal layer diffusion 有权
    用于防止金属层扩散的TFT电极的制造方法

    公开(公告)号：US07632694B2

    公开(公告)日：2009-12-15

    申请号：US11375336

    申请日：2006-03-15

    申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

    摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

    摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

    Vehicular side view mirror including an illuminating device
    10.
    发明授权
    Vehicular side view mirror including an illuminating device 有权

    公开(公告)号：US09656600B2

    公开(公告)日：2017-05-23

    申请号：US14882142

    申请日：2015-10-13

    申请人： Cheng-Chung Chen

    发明人： Cheng-Chung Chen

    IPC分类号： B60Q1/00 ,  B60Q3/00 ,  F21V11/00 ,  F21V15/01 ,  B60Q1/26 ,  B60R1/00

    CPC分类号： B60Q1/2661 ,  B60Q1/0088 ,  B60Q1/2665 ,  B60R1/006 ,  B60R1/1207

    摘要： A vehicular side view minor includes a minor seat having an engagement portion. A light-impermeable first annular wall protrudes rearwards from an inner periphery of a through-hole in the engagement portion. A minor is mounted in front of the minor seat and includes a reflective layer. A light-permeable housing is mounted to the engagement portion and has a second annular wall extending through the first annular wall. A front wall of the second annular wall includes an optical lens portion. A circuit board is received in the housing and has a lighting element. The circuit board includes a periphery abutting an abutment portion of the second annular wall. A gluing material is filled in a gluing space behind the circuit board and sealingly covers a rear surface of the circuit board, front sections of two wires, and a portion of the second annular wall to form a sealing portion.