公开(公告)号：US07903372B2

公开(公告)日：2011-03-08

申请号：US11329062

申请日：2006-01-11

申请人： Hoo-san Lee ,  Young-hun Im ,  Yong-su Kim

发明人： Hoo-san Lee ,  Young-hun Im ,  Yong-su Kim

IPC分类号： G11B5/187 ,  G11B5/11 ,  G11B5/31

CPC分类号： G11B5/1871 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetic recording head and a method of manufacturing the same. The magnetic recording head includes a stack containing a main pole and a return pole. The stack includes a first magnetic layer having a groove formed therein; an insulating layer covering a surface of the groove; and a second magnetic layer pattern filling the groove covered with the insulating layer.

摘要翻译： 磁记录头及其制造方法。 磁记录头包括一个包含一个主极和一个返回极的堆叠。 堆叠包括其中形成有凹槽的第一磁性层; 覆盖所述槽的表面的绝缘层; 以及填充由绝缘层覆盖的沟槽的第二磁性层图案。

公开(公告)号：US07902579B2

公开(公告)日：2011-03-08

申请号：US11505969

申请日：2006-08-18

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C19/0808 ,  H01L27/228

摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

摘要翻译： 磁存储器件包括存储区域，输入端和传感器。 存储区包括自由层，钉扎层和非磁性层。 自由层具有相邻扇区和磁畴壁。 被钉扎层对应于扇区并且具有固定的磁化方向。 非磁性层形成在自由层和被钉扎层之间。 存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。 输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。 传感器测量流过存储器区域的电流。

公开(公告)号：US07817461B2

公开(公告)日：2010-10-19

申请号：US11752397

申请日：2007-05-23

申请人： Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

发明人： Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

IPC分类号： G11C11/00

CPC分类号： G11C11/14 ,  G11B5/66 ,  G11C19/0808

摘要： Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer including a plurality of magnetic domains, first and second ferromagnetic pinned layers formed on lower and upper surfaces of the magnetic layer, respectively, and having opposite magnetization directions, first and second insulating spacers interposed between the first and second ferromagnetic pinned layers and the magnetic layer, respectively, and an energy supplying unit applying energy to the magnetic layer for a magnetic domain wall movement.

摘要翻译： 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括：包含多个磁畴的磁性层，分别形成在磁性层的下表面和上表面上并且具有相反的磁化方向的第一和第二铁磁固定层，第一和第二绝缘垫片插入在第一和 第二铁磁钉扎层和磁性层，以及向磁性层施加能量以供磁畴壁运动的能量供给单元。

公开(公告)号：US07799445B2

公开(公告)日：2010-09-21

申请号：US11477624

申请日：2006-06-30

申请人： Hoon-sang Oh ,  Yong-su Kim ,  No-yeol Park ,  Hoo-san Lee ,  Chul-min Choi

发明人： Hoon-sang Oh ,  Yong-su Kim ,  No-yeol Park ,  Hoo-san Lee ,  Chul-min Choi

IPC分类号： G11B5/66

CPC分类号： G11B5/667

摘要： A perpendicular magnetic recording medium including a soft magnetic underlayer. The perpendicular magnetic recording medium includes: a lower structural body including an anti-ferromagnetic layer; a first soft magnetic underlayer, a non-magnetic layer, and a second soft magnetic underlayer sequentially formed on the anti-ferromagnetic layer, where the thickness ratio of the second soft magnetic underlayer to that of the first soft magnetic underlayer is designed to be within specific range; and a recording layer formed on the second soft magnetic underlayer. Therefore, noise generated on the soft magnetic underlayer due to external magnetic fields of a magnetic head and a voice coil motor can be reduced greatly.

摘要翻译： 包括软磁性底层的垂直磁记录介质。 垂直磁记录介质包括：包括反铁磁层的下结构体; 顺序地形成在反铁磁层上的第一软磁性底层，非磁性层和第二软磁性底层，其中第二软磁性底层与第一软磁性底层的厚度比被设计为在 具体范围 以及形成在第二软磁性底层上的记录层。 因此，可以大大降低由于磁头和音圈电机的外部磁场而在软磁性底层上产生的噪声。

公开(公告)号：US07710756B2

公开(公告)日：2010-05-04

申请号：US11655927

申请日：2007-01-22

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/14 ,  G11C19/0841 ,  Y10S977/933

摘要： A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.

摘要翻译： 半导体器件包括具有多个磁畴的磁线，其中，所述磁线包括通过脉冲场或脉冲电流移动的磁畴壁。 半导体器件的磁线不需要额外的凹口，因为磁线包括磁畴壁，其移动距离由脉冲场或脉冲电流控制。

公开(公告)号：US07684233B2

公开(公告)日：2010-03-23

申请号：US11347228

申请日：2006-02-06

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/228

摘要： A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.

摘要翻译： 使用自旋极化电流的多位磁存储器件及其制造和操作方法。 磁存储器件包括连接到开关器件的开关器件和磁存储节点，其中磁存储节点包括彼此垂直且分开设置的第一磁性层，第二磁性层和自由磁性层。 第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性，并且具有彼此相反的磁极化。 自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。 磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。

公开(公告)号：US07573676B2

公开(公告)日：2009-08-11

申请号：US11196412

申请日：2005-08-04

申请人： Hoo-san Lee ,  Young-hun Im ,  Yong-su Kim

发明人： Hoo-san Lee ,  Young-hun Im ,  Yong-su Kim

IPC分类号： G11B5/17

CPC分类号： G11B5/147

摘要： A magnetic recording head includes a return pole, a writing pole spaced a predetermined distance from the return pole, an induction writing coil forming a magnetic field on the writing pole, and a writing pole shield formed on the same plane as the writing pole.

摘要翻译： 磁记录头包括一个返回极，与返回极间隔预定距离的一个写入极，一个在写入极上形成一个磁场的感应写入线圈，和一个形成在与写入极相同的平面上的写入磁极屏蔽。

公开(公告)号：US07486478B2

公开(公告)日：2009-02-03

申请号：US11247305

申请日：2005-10-12

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/3143

摘要： Provided is a magnetic head having a magnetic thin film structure that reduces the effect of a stray field and generates a magnetization reversal at a high speed. The magnetic head includes a first pole, a second pole spaced apart from the first pole, and an induction coil that induces a magnetic field in the first and second poles, wherein the first and second poles include a pole tip in which a leakage flux for recording is generated, and a head yoke that guides the flux flowing in the poles, and at least one implant for controlling a magnetic domain, the implant formed in at least one of the first and second poles. The magnetic thin film can effectively reduce the effect of a stray field entering from the outside, and can control a domain wall motion so that high speed magnetic recording is possible, by generating a magnetization reversal at a high speed corresponding to a magnetic field applied by an induction coil.

摘要翻译： 本发明提供一种具有磁性薄膜结构的磁头，其能够降低杂散磁场的影响并产生高速的磁化反转。 磁头包括第一极，与第一极分开的第二极和感应线圈，其在第一和第二极中引起磁场，其中第一和第二极包括极尖，其中漏极通量用于 产生记录，以及引导磁极在磁极中流动的磁头磁轭，以及用于控制磁畴的至少一个注入，形成在第一和第二磁极中的至少一个上的注入。 磁性薄膜可以有效地降低从外部进入的杂散场的影响，并且可以控制畴壁运动，从而可以通过相应于由磁场施加的磁场产生高速磁化反转，从而实现高速磁记录 感应线圈。

公开(公告)号：US20090027802A1

公开(公告)日：2009-01-29

申请号：US12054728

申请日：2008-03-25

申请人： Yong-su Kim

发明人： Yong-su Kim

IPC分类号： G11B5/596

CPC分类号： G11B5/59688 ,  G11B5/59655

摘要： Provided is a magnetic recording apparatus including a magnetic recording medium having a magnetic recording position patterned of a magnetic substance and a read head reading information from the magnetic recording medium, wherein the magnetic recording medium includes: a data area having the magnetic recording position patterned including a plurality of data tracks; and a servo area including a servo burst for tracking the data tracks, wherein the servo burst includes a plurality of bursts deviating from one another in a downtrack direction, and a width of each of the bursts is equal to or greater than a width of the read head and narrower than twice the width of the read head. According to this structure, although data is reproduced using a read head having a greater width than a width of each of data tracks, a linear section in which an output voltage is reduced depending on a size of an off-track is formed. As a result, a dead zone can be removed.

摘要翻译： 本发明提供一种磁记录装置，包括磁记录介质，磁记录介质具有图形化的磁性物质和从磁记录介质读取信息的磁头，其中磁记录介质包括：具有磁记录位置图形化的数据区，包括 多个数据轨道; 以及包括用于跟踪数据轨道的伺服脉冲串的伺服区域，其中所述伺服脉冲串包括在倾斜方向上彼此偏离的多个脉冲串，并且每个脉冲串的宽度等于或大于 读头并且窄于读头宽度的两倍。 根据该结构，虽然使用宽度大于数据磁道的宽度的读头来再现数据，但是形成其中输出电压根据偏离磁道的尺寸减小的线性部分。 因此，可以去除死区。

公开(公告)号：US20070194359A1

公开(公告)日：2007-08-23

申请号：US11505969

申请日：2006-08-18

申请人： Chee-Kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

发明人： Chee-Kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC分类号： H01L29/94

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C19/0808 ,  H01L27/228

摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

摘要翻译： 磁存储器件包括存储区域，输入端和传感器。 存储区包括自由层，钉扎层和非磁性层。 自由层具有相邻扇区和磁畴壁。 被钉扎层对应于扇区并且具有固定的磁化方向。 非磁性层形成在自由层和被钉扎层之间。 存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。 输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。 传感器测量流过存储器区域的电流。