摘要:
An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
摘要:
A conversion apparatus includes a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, with each pixel having a conversion element that converts radiation into electric charges, and a switching element. The switching element has a structure having a gate electrode, a first insulating layer, a second insulating layer, and a semiconductor layer from the substrate side in this order. The conversion element has an MIS-type structure of a bottom electrode arranged on an insulating layer extending from the first insulating layer of the switching element and being vertically higher than the gate electrode of the switching element, an insulating layer which is formed of the same layer as the second insulating layer of the switching element, and a semiconductor layer which is formed of the same layer as the semiconductor layer of the switching element from the substrate side in this order.
摘要:
An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要:
A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要:
An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
摘要:
A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要:
This imaging apparatus has pixels arranged in a matrix shape on a substrate, each of which has a conversion element and the first TFT, wherein the first TFT is connected to the first gate wiring and signal wiring, and the conversion element is connected to bias wiring. The imaging apparatus has the second TFT 6 that is arranged outside a region in which the pixels are arranged. The signal wirings are mutually connected through the second TFT 6 outside a region in which the pixels are arranged. When the apparatus is driven, the second TFT is turned off.
摘要:
A detection apparatus comprising a substrate; a switching element arranged over the substrate and including a plurality of electrodes; a conductive line arranged over the substrate and electrically connected to a first electrode of the plurality of electrodes of the switching element; and a conversion element including a semiconductor layer arranged over the switching element and the conductive line and arranged between two electrodes, one electrode of the two electrodes being electrically connected to a second electrode of the plurality of electrodes of the switching element, is provided. The one electrode of the conversion element is arranged over the switching element and the conductive line through a space formed between the one electrode and the first electrode of the switching element or between the one electrode and the conductive line.
摘要:
The object of the invention is to realize a light radiation-detecting apparatus including a step of preparing a matrix array including a substrate, an insulating layer arranged on the substrate, a plurality of pixels arranged on the insulating layer, wherein the pixel includes a conversion element converting an incident radiation into an electric signal, and connection electrode arranged at a periphery of the plurality of pixels, fixing a flexible supporting member for covering the plurality of pixels to the matrix array at a side opposite to the substrate, and releasing the substrate from the matrix array.
摘要:
A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.