Noise reduction circuit
    61.
    发明申请
    Noise reduction circuit 审中-公开
    降噪电路

    公开(公告)号:US20060268133A1

    公开(公告)日:2006-11-30

    申请号:US11378392

    申请日:2006-03-20

    IPC分类号: H04N5/217

    CPC分类号: H04N5/365 H04N5/347

    摘要: A noise reduction circuit includes a plurality of electric charge accumulating sections and a plurality of switching sections. In the noise reduction circuit, electric charge in an amount corresponding to a signal containing a noise is accumulated in each of the electric charge accumulating sections, and thereafter the switching sections are turned on to connect the electric charge accumulating sections in parallel or in series with each other, thereby outputting a signal corresponding to the average of, or the sum total of, the amounts of electric charge accumulated in the respective electric charge accumulating sections.

    摘要翻译: 噪声降低电路包括多个电荷累积部分和多个切换部分。 在降噪电路中,在每个电荷累积部分中累积与包含噪声的信号相对应的量的电荷,此后开关部分被接通以将电荷累积部分并联或串联连接 从而输出与累积在各个电荷累积部分中的电荷量的平均值或总和相对应的信号。

    Image pickup device
    63.
    发明申请
    Image pickup device 审中-公开
    图像拾取装置

    公开(公告)号:US20060152611A1

    公开(公告)日:2006-07-13

    申请号:US10534892

    申请日:2003-11-17

    IPC分类号: H04N5/335

    CPC分类号: H04N5/3741 H04N5/359

    摘要: An imaging element includes a photoelectric conversion element, a readout transistor, an accumulated element, a detection transistor, and a reset transistor. The readout transistor reads a signal charge when a gate potential to be supplied to the gate terminal is changed from a first state to a second state. The detection transistor detects a voltage signal after the gate potential to be supplied to the gate terminal of the readout transistor is changed from the second state to the first state. A reset potential supplied from the reset transistor to the accumulated element has an intermediate potential between the gate potential in the first state that is supplied to the gate terminal of the readout transistor and a predetermined VDD potential.

    摘要翻译: 成像元件包括光电转换元件,读出晶体管,累积元件,检测晶体管和复位晶体管。 当提供给栅极端子的栅极电位从第一状态改变到第二状态时,读出晶体管读取信号电荷。 在提供给读出晶体管的栅极端子的栅极电位从第二状态变为第一状态之后,检测晶体管检测电压信号。 从复位晶体管向累积元件提供的复位电位在提供给读出晶体管的栅极端子的第一状态下的栅极电位与预定的VDD电位之间具有中间电位。

    Solid-state imaging device, camera, power supply device and method thereof
    64.
    发明申请
    Solid-state imaging device, camera, power supply device and method thereof 有权
    固态成像装置,相机,电源装置及其方法

    公开(公告)号:US20050024525A1

    公开(公告)日:2005-02-03

    申请号:US10901120

    申请日:2004-07-29

    CPC分类号: H04N5/357 H04N5/374

    摘要: With the use of the MOS-type solid-state imaging device, it is possible, by extending the period during which the VDD voltage rises from Low level to High level, that the gate voltage of the resetting unit does not fluctuate to have a positive electric potential due to the coupling capacitance between the VDD power and the gate of the resetting unit, unlike the conventional case. Consequently, the electrons necessary for rendering the accumulation unit non-selectable do not flow from the accumulation unit to the VDD power. This prevents the level of the electric potential in the accumulation unit of non-selectable row from becoming positive. Also, the detecting unit is not switched on, which prevents the error of selecting a non-selectable row.

    摘要翻译: 通过使用MOS型固态成像装置,通过将VDD电压从低电平上升到高电平的期间,能够使复位部的栅极电压不发生波动, 与传统情况不同,由于VDD功率与复位单元的栅极之间的耦合电容引起的电位。 因此,使不可选择的累积单元所需的电子不会从累积单元流向VDD电力。 这防止了非可选行的累积单元中的电位的电平变为正。 此外,检测单元不被接通,这防止了选择不可选行的错误。

    Method for manufacturing solid-state imaging device

    公开(公告)号:US06498103B2

    公开(公告)日:2002-12-24

    申请号:US09903411

    申请日:2001-07-11

    IPC分类号: H01L21311

    CPC分类号: H01L27/14692

    摘要: A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

    Solid-state imaging device
    66.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08208054B2

    公开(公告)日:2012-06-26

    申请号:US12595229

    申请日:2008-04-16

    IPC分类号: H04N5/335

    摘要: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

    摘要翻译: 固态成像装置包括以例如方格图案布置的共享放大晶体管和复位晶体管,使得相同颜色的光电二极管2的质心基本上以相同的间距排列。 结果,可以保持固态成像装置的分辨率,而不考虑每个单位像素的入射光的不规则性。

    Solid state imaging device with readout control and output control
    67.
    发明授权
    Solid state imaging device with readout control and output control 有权
    具有读出控制和输出控制的固态成像装置

    公开(公告)号:US08040418B2

    公开(公告)日:2011-10-18

    申请号:US12091138

    申请日:2006-07-11

    IPC分类号: H04N3/14

    摘要: An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line. Here, the scan timing generation unit and the switch unit, and the external output timing unit and the switch unit control the readout and the output of the pixel signals, respectively, so that a time period required for the readout of the pixel signals from the capacitance element to the signal line is longer than a time period required for the output of the pixel signals from the signal line to the common signal line.

    摘要翻译: 本发明的目的是提供一种可实现信号输出加速的二维固态成像装置。 二维固态成像装置包括:像素区域; 第一电容元件和第二电容元件,每个元件被布置用于不同的像素列并且累积相应列的像素的像素信号; 第一水平信号线和第二水平信号线,每个信号线发送累积在对应的电容元件中的像素信号; 连接到水平信号线的公共信号线; 扫描定时生成单元和开关单元,其控制从电容元件到水平信号线的像素信号的读出; 以及外部输出定时单元和开关单元,其选择水平信号线并将所选择的水平信号线的像素信号的输出控制到公共信号线。 这里,扫描定时生成单元和开关单元以及外部输出定时单元和开关单元分别控制像素信号的读出和输出,从而从像素信号读出所需的时间周期 信号线的电容元件比从信号线到公共信号线的像素信号的输出所需的时间长。

    Mounted imaging device
    68.
    发明授权
    Mounted imaging device 有权
    安装成像装置

    公开(公告)号:US07868286B2

    公开(公告)日:2011-01-11

    申请号:US12427332

    申请日:2009-04-21

    IPC分类号: H01J40/14

    摘要: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.

    摘要翻译: 安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。 在每个像素中,滤色器通过多层干涉滤光器分离入射光。 多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。 多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

    SOLID-STATE IMAGING DEVICE
    70.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号:US20100110245A1

    公开(公告)日:2010-05-06

    申请号:US12595201

    申请日:2008-04-16

    IPC分类号: H04N5/335

    摘要: A solid-state imaging device according to the present invention comprises: a region (hereinafter, referred to as a pixel cell 100) in which at least a photodiode 101 for performing photoelectric conversion, a readout MOS transistor 102 for reading out from the photodiode 101 an electric charge photoelectrically converted, and a floating diffusion 103 for reading out and storing the electric charge via the readout MOS transistor 102 from the photodiode are arranged; and a region (hereinafter, referred to as a transistor cell 106) which includes an amplifier MOS transistor 105 having a plurality of two or more said pixel cells 100 connected thereto and a reset MOS transistor 104 for resetting a potential of the floating diffusion 103 so as to be a potential the same as a potential of a power source and in which at least the reset MOS transistor 104 and the amplifier MOS transistors 105 are arranged, and the pixel cell 100 and the transistor cell 106 are two-dimensionally arranged.

    摘要翻译: 根据本发明的固态成像装置包括:至少用于进行光电转换的光电二极管101的区域(以下称为像素单元100),用于从光电二极管101读出的读出MOS晶体管102 布置电光电转换电荷,以及用于通过读出MOS晶体管102从光电二极管读出并存储电荷的浮动扩散部103。 以及具有连接有多个2个以上的像素单元100的放大器MOS晶体管105的区域(以下称为晶体管单元106)和用于复位浮置扩散区域103的电位的复位MOS晶体管104 作为与电源的电位相同的电位,并且其中至少布置复位MOS晶体管104和放大器MOS晶体管105,并且像素单元100和晶体管单元106二维布置。