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公开(公告)号：US20060152611A1
公开(公告)日：2006-07-13
申请号：US10534892
申请日：2003-11-17
IPC分类号： H04N5/335
CPC分类号： H04N5/3741 , H04N5/359
摘要： An imaging element includes a photoelectric conversion element, a readout transistor, an accumulated element, a detection transistor, and a reset transistor. The readout transistor reads a signal charge when a gate potential to be supplied to the gate terminal is changed from a first state to a second state. The detection transistor detects a voltage signal after the gate potential to be supplied to the gate terminal of the readout transistor is changed from the second state to the first state. A reset potential supplied from the reset transistor to the accumulated element has an intermediate potential between the gate potential in the first state that is supplied to the gate terminal of the readout transistor and a predetermined VDD potential.
摘要翻译： 成像元件包括光电转换元件，读出晶体管，累积元件，检测晶体管和复位晶体管。 当提供给栅极端子的栅极电位从第一状态改变到第二状态时，读出晶体管读取信号电荷。 在提供给读出晶体管的栅极端子的栅极电位从第二状态变为第一状态之后，检测晶体管检测电压信号。 从复位晶体管向累积元件提供的复位电位在提供给读出晶体管的栅极端子的第一状态下的栅极电位与预定的VDD电位之间具有中间电位。
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2.发明授权Solid-state color imaging apparatus capable of reducing false signals with regard to both luminance and chrominance 有权能够减少关于亮度和色度两者的假信号的固态彩色成像装置公开(公告)号：US07349016B2
公开(公告)日：2008-03-25
申请号：US10814347
申请日：2004-04-01
CPC分类号： H04N5/23245 , H04N5/347 , H04N5/3728 , H04N9/045
摘要： A pixel area of a megapixel solid-state color imaging device is divided into unit areas for pixel adding and all the pixels for the same color are added together in each unit area. Accordingly, the percentage of utilized pixels is raised to 100% and aliasing noise to low frequencies in a high-frequency video signal is greatly suppressed by a spatial LPF (low pass filter) effect of the pixel addition in the area units.
摘要翻译： 百万像素固体彩色成像装置的像素区域被划分为用于像素相加的单位区域，并且在每个单位区域中将相同颜色的所有像素相加在一起。 因此，通过区域单位中的像素相加的空间LPF（低通滤波器）效应，高频视频信号中的利用像素的百分比提高到100％，并且将低频的混叠噪声大大抑制。
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公开(公告)号：US20100110245A1
公开(公告)日：2010-05-06
申请号：US12595201
申请日：2008-04-16
申请人： Takumi Yamaguchi , Takahiro Iwasawa
发明人： Takumi Yamaguchi , Takahiro Iwasawa
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14641 , H04N5/37457 , H04N9/07
摘要： A solid-state imaging device according to the present invention comprises: a region (hereinafter, referred to as a pixel cell 100) in which at least a photodiode 101 for performing photoelectric conversion, a readout MOS transistor 102 for reading out from the photodiode 101 an electric charge photoelectrically converted, and a floating diffusion 103 for reading out and storing the electric charge via the readout MOS transistor 102 from the photodiode are arranged; and a region (hereinafter, referred to as a transistor cell 106) which includes an amplifier MOS transistor 105 having a plurality of two or more said pixel cells 100 connected thereto and a reset MOS transistor 104 for resetting a potential of the floating diffusion 103 so as to be a potential the same as a potential of a power source and in which at least the reset MOS transistor 104 and the amplifier MOS transistors 105 are arranged, and the pixel cell 100 and the transistor cell 106 are two-dimensionally arranged.
摘要翻译： 根据本发明的固态成像装置包括：至少用于进行光电转换的光电二极管101的区域（以下称为像素单元100），用于从光电二极管101读出的读出MOS晶体管102 布置电光电转换电荷，以及用于通过读出MOS晶体管102从光电二极管读出并存储电荷的浮动扩散部103。 以及具有连接有多个2个以上的像素单元100的放大器MOS晶体管105的区域（以下称为晶体管单元106）和用于复位浮置扩散区域103的电位的复位MOS晶体管104 作为与电源的电位相同的电位，并且其中至少布置复位MOS晶体管104和放大器MOS晶体管105，并且像素单元100和晶体管单元106二维布置。
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公开(公告)号：US20070057954A1
公开(公告)日：2007-03-15
申请号：US11517353
申请日：2006-09-08
IPC分类号： G09G5/39
CPC分类号： H04N9/045 , G02B5/201 , H04N9/69 , H04N2209/045
摘要： The solid-state image pickup element comprises a filter film made of a single-layer inorganic material which exhibits a maximum value at a specific wavelength on transmission spectra of incident light in accordance with a film thickness thereof, and a photoelectrical conversion part for generating a signal charge in accordance with light quantity of the incident light transmitted through the filter film. For the filter film, a number of the filter films of at least two kinds having different film thickness is provided, and a number of the filter films are arranged in parallel based on a prescribed arrangement. Image pickup signals outputted from the solid-state image pickup element are signal-processed by a signal processor. The signal processor generates at least one of the signals that correspond to a luminance signal, a color signal, a color difference signal, and light quantity of incident light by applying color conversion processing on the image pickup signal in accordance with the prescribed arrangement.
摘要翻译： 固体摄像元件包括由单层无机材料构成的滤光膜，该滤光膜根据其膜厚在入射光的透射光谱下在特定波长处具有最大值，以及光电转换部， 根据透过过滤膜的入射光的光量来产生信号电荷。 对于过滤膜，设置多个具有不同膜厚度的至少两种的过滤膜，并且根据规定的布置平行布置多个过滤膜。 从固态图像拾取元件输出的图像拾取信号由信号处理器进行信号处理。 根据规定的布置，信号处理器通过对摄像信号进行颜色转换处理来产生对应于亮度信号，颜色信号，色差信号和入射光量的信号中的至少一个。
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5.发明授权公开(公告)号：US07164113B2
公开(公告)日：2007-01-16
申请号：US10676136
申请日：2003-09-30
IPC分类号： H01L27/00
CPC分类号： H04N5/2253 , H01L2224/13025 , H01L2224/16145 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2924/00012 , H01L2924/00
摘要： The present invention provides a small, high-performance imaging device and its application to products at low cost by preventing noise superimposed on a timing pulse feed line from affecting the output of an imaging chip. The imaging device includes two chips: an imaging chip 101 including a sensor 102 and an image processing chip 106 including an image processing circuit 110. The transistors of all circuits in the imaging chip 101 are formed as either nMOS or pMOS transistors. The imaging chip 101 is stacked on the image processing chip 106.
摘要翻译： 本发明通过防止叠加在定时脉冲馈电线上的噪声影响成像芯片的输出，提供了一种小型高性能成像装置及其在低成本产品中的应用。 成像装置包括两个芯片：包括传感器102的成像芯片101和包括图像处理电路110的图像处理芯片106。 成像芯片101中的所有电路的晶体管形成为nMOS或pMOS晶体管。 成像芯片101堆叠在图像处理芯片106上。
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公开(公告)号：US20080259191A1
公开(公告)日：2008-10-23
申请号：US11663063
申请日：2005-09-13
IPC分类号： H04N3/14
CPC分类号： H04N5/3651 , H01L27/14621 , H01L27/14643 , H01L31/02162
摘要： A microcomputer outputs correction data. A shading correction circuit performs a shading correction to a digital image signal using the correction data outputted from the microcomputer. A YC processing circuit generates a video signal from the digital image signal having undergone the shading correction, performs processing such as a gamma correction to the generated video signal, and outputs the video signal having undergone the processing such as the gamma correction.
摘要翻译： 微型计算机输出校正数据。 阴影校正电路使用从微计算机输出的校正数据对数字图像信号进行阴影校正。 YC处理电路从经过阴影校正的数字图像信号生成视频信号，对所生成的视频信号执行伽马校正等处理，并输出经伽马校正等处理的视频信号。
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公开(公告)号：US07268813B2
公开(公告)日：2007-09-11
申请号：US10764452
申请日：2004-01-27
申请人： Takahiko Murata , Takumi Yamaguchi , Toshiya Fujii
发明人： Takahiko Murata , Takumi Yamaguchi , Toshiya Fujii
IPC分类号： H04N3/335
CPC分类号： H04N5/335
摘要： A solid state imaging apparatus includes a plurality of pixels two-dimensionally arranged in the row direction and the column direction, and every two of the plurality of pixels that are adjacent to each other in the row direction or the column direction include color filters of different colors, respectively. A signal mixture circuit is provided in each same-row and same-color pixel group. Each said same-row and same-color pixel group consisting of ones of the plurality of pixels which are included in a pixel mixture unit to be a subject of pixel signal mixture, which are located in the same row, and which include color filters of the same color. The signal mixture circuit includes a combination of a capacitor and a transmission switch, stores pixel signals from pixels included in a same-row and same-color pixel group and mixes the signals together.
摘要翻译： 固态成像装置包括在行方向和列方向上二维排列的多个像素，并且在行方向或列方向上彼此相邻的多个像素中的每两个像素包括不同的滤色器 颜色分别。 信号混合电路设置在同一行同色像素组中。 每个所述相同行和相同颜色的像素组由包括在像素混合单元中的多个像素中的像素混合单元组成，该像素混合单元位于同一行中，并且包括位于同一行中的滤色器 相同的颜色。 信号混合电路包括电容器和传输开关的组合，存储来自包括在同一行和相同颜色的像素组中的像素的像素信号并将信号混合在一起。
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公开(公告)号：US07968888B2
公开(公告)日：2011-06-28
申请号：US11422708
申请日：2006-06-07
IPC分类号： H01L31/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
摘要翻译： 本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。 本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及 形成在孔中的高折射率层。 这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料 具有折射率，其允许通过孔径传输具有最大波长的光。
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公开(公告)号：US20090225204A1
公开(公告)日：2009-09-10
申请号：US12096952
申请日：2006-06-27
IPC分类号： H04N5/335
CPC分类号： G02B5/28 , G02B3/0043 , G02B5/201 , G02B5/282 , H01L27/14621 , H01L27/14627
摘要： A wavelength separation filter 206 is composed of λ/4 multilayer films 302 to 304 that are sequentially laminated on a multilayer interference filter 301. The multilayer interference filter 301 is composed of two λ/4 multilayer films with a dielectric layer sandwiched therebetween. Also, the multilayer interference filter 301 is composed of parts 301B, 301G, 301R that transmit blue light, green light, and red light, respectively. The multilayer interference filter 301 wavelength-separates visible light. The λ/4 multilayer films 302 to 304 reflect light having a wavelength within wavelength ranges having set-wavelengths of 800 nm, 900 nm, and 1000 nm respectively. In other words, the λ/4 multilayer films 302 to 304 reflect near infrared light.
摘要翻译： 波长分离滤光器206由依次层叠在多层干涉滤光器301上的λ/ 4多层膜302〜304构成。多层干涉滤光器301由夹在其间的电介质层的两个λ/ 4多层膜构成。 此外，多层干涉滤光器301分别由透射蓝光，绿光和红光的部分301B，301G，301R组成。 多层干涉滤光器301对可见光进行波长分离。 λ/ 4多层膜302至304分别反射具有波长范围为800nm，900nm和1000nm的波长范围内的波长的光。 换句话说，λ/ 4多层膜302至304反射近红外光。
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公开(公告)号：US07569906B2
公开(公告)日：2009-08-04
申请号：US11702531
申请日：2007-02-06
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。
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