公开(公告)号：US07312959B2

公开(公告)日：2007-12-25

申请号：US10946323

申请日：2004-09-21

申请人： Ryou Nakabayashi ,  Eiji Umetsu ,  Naoya Hasegawa

发明人： Ryou Nakabayashi ,  Eiji Umetsu ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/332

摘要： At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antiferromagnetic layers is formed with a space therebetween in a track width direction, and in addition, at upper sides of the extension portions, a pair of second antiferromagnetic layers is formed with a space therebetween in the track width direction.

摘要翻译： 在包括自由磁性层，第一非磁性材料层和固定磁性层的多层膜的两侧形成从固定磁性层延伸的延伸部分。 在延伸部分的下侧，一对第一反铁磁性层在轨道宽度方向上形成有间隔，另外在延伸部的上侧形成有一对第二反铁磁性层， 在轨道宽度方向。

公开(公告)号：US07310208B2

公开(公告)日：2007-12-18

申请号：US11156677

申请日：2005-06-20

申请人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A first magnetic sublayer constituting a pinned magnetic layer is provided in contact with a first magnetostriction-enhancing layer to increase the magnetostriction constant of the first magnetic sublayer. In addition, a nonmagnetic intermediate sublayer constituting the pinned magnetic layer is made of a material having a lattice constant larger than that of Ru, such as a Ru—X alloy, to distort the crystal structures of the first magnetic sublayer and a second magnetic sublayer each in contact with the nonmagnetic intermediate sublayer, increasing the magnetostriction constants of the first magnetic sublayer and the second magnetic sublayer.

摘要翻译： 提供构成被钉扎磁性层的第一磁性子层与第一磁致伸缩增强层接触以增加第一磁性子层的磁致伸缩常数。 此外，构成被钉扎磁性层的非磁性中间子层由具有大于Ru的晶格常数（例如Ru-X合金）的材料制成，以使第一磁性子层和第二磁性子层的晶体结构变形 每个与非磁性中间子层接触，增加第一磁性子层和第二磁性子层的磁致伸缩常数。

公开(公告)号：US07295408B2

公开(公告)日：2007-11-13

申请号：US11155289

申请日：2005-06-17

申请人： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： G11B5/265 ,  G11B5/127

摘要： In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.

摘要翻译： 在磁传感元件中，多层膜的上游部分和多层膜的下游部分中的自旋依赖性体散射量被控制为不对称。 因此，对于多层膜的上游部分，代表磁阻耗散面积的变化的值ΔRxA被控制为小于多层膜的下游部分的ΔRxA的值。

公开(公告)号：US07283335B2

公开(公告)日：2007-10-16

申请号：US10430893

申请日：2003-05-06

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903

摘要： In a magnetic detecting element, ferromagnetic layers are formed on both side portions of a free magnetic layer through nonmagnetic intermediate layers, and second antiferromagnetic layers are formed on the ferromagnetic layers with a spacing greater than the spacing between the ferromagnetic layers in the track width direction. Also, in both side portions of the element, the ferromagnetic layers have portions extending from the inner end surfaces of the respective second antiferromagnetic layers toward the center in the track width direction. Furthermore, electrode layers are formed on the second antiferromagnetic layers and on the extending portions of the ferromagnetic layers. It is thus possible to improve reproduced output, and suppress widening of an effective reproducing track width to appropriately suppress the occurrence of side reading.

摘要翻译： 在磁检测元件中，铁磁层通过非磁性中间层形成在自由磁性层的两侧部分上，并且第二反铁磁层形成在铁磁层上，间隔大于轨道宽度方向上的铁磁层之间的间隔 。 此外，在元件的两侧部分中，铁磁层具有从相应的第二反铁磁层的内端表面朝向轨道宽度方向的中心延伸的部分。 此外，电极层形成在第二反铁磁层上和铁磁层的延伸部分上。 因此，可以改善再现输出，并且抑制有效再现轨迹宽度的加宽以适当地抑制侧读的发生。

公开(公告)号：US20070171579A1

公开(公告)日：2007-07-26

申请号：US11625147

申请日：2007-01-19

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08

摘要： Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed. The second pinned magnetic layer has a fcc structure in which crystal planes equivalent to a (111) plane are aligned parallel to a layer surface, and the insulating barrier layer is formed to have a rutile structure or the like. The enhance layer is formed to have a bcc structure in which crystal planes equivalent to a (110) plane are aligned parallel to a layer surface.

摘要翻译： 这里描述的是隧道式磁检测元件及其制造方法。 在隧道式磁检测元件中，包括在设置在绝缘阻挡层上的自由磁性层中的增强层与绝缘阻挡层接触，绝缘阻挡层可以由诸如氧化钛的氧化物制成。 在绝缘阻挡层下面，形成构成被钉扎磁性层的第二钉扎磁性层。 第二钉扎磁性层具有fcc结构，其中等同于（111）面的晶面平行于层表面排列，并且绝缘阻挡层形成为具有金红石结构等。 增强层形成为具有bcc结构，其中等同于（110）面的晶面平行于层表面排列。

公开(公告)号：US20070165337A1

公开(公告)日：2007-07-19

申请号：US11622918

申请日：2007-01-12

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10

摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

公开(公告)号：US07218485B2

公开(公告)日：2007-05-15

申请号：US10755641

申请日：2004-01-12

申请人： Naoya Hasegawa ,  Masamichi Saito

发明人： Naoya Hasegawa ,  Masamichi Saito

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

摘要： A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed magnetic material layers are formed at equivalent film positions. The magnetizations of the fixed magnetic material layers provided in a vertical direction are antiparallel to each other, and the magnetizations of the free magnetic material layers provided in the vertical direction are antiparallel to each other. By an external magnetic field, the magnetizations of the free magnetic material layer are rotated in phase to magnetization directions of the fixed magnetic material layers.

摘要翻译： 自由磁性层包含自由磁性材料层和介于其间的中间层。 固定磁性层包含固定的磁性材料层和介于其间的非磁性中间层。 自由磁性材料层和固定磁性材料层形成在等效的膜位置。 在垂直方向上设置的固定磁性材料层的磁化反向平行，并且沿垂直方向设置的自由磁性材料层的磁化彼此反平行。 通过外部磁场，自由磁性材料层的磁化与固定磁性材料层的磁化方向相位旋转。

公开(公告)号：US07212383B2

公开(公告)日：2007-05-01

申请号：US10755698

申请日：2004-01-12

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3929 ,  G11B2005/3996

摘要： Disclosed are a magnetic sensing element in which side reading can be prevented, read sensitivity can be improved, and gap narrowing is enabled, and a method for fabricating the same. A magnetic sensing element includes a pair of first antiferromagnetic layers separated by a first spacer section. A first spacer layer is disposed in the first spacer section. The first spacer layer has the same composition as that of the first antiferromagnetic layers, and has a disordered crystal structure with a thickness that is smaller than that of the first antiferromagnetic layers. A first free magnetic layer is disposed on the continuous surface including the upper surfaces of the first antiferromagnetic layers and the first spacer layers. The magnetic sensing element also includes a nonmagnetic interlayer, a second free magnetic layer, and a pair of second antiferromagnetic layers separated by a second spacer section on the second free magnetic layer.

摘要翻译： 公开了一种磁传感元件，其中可以防止侧读，可提高读灵敏度，并能实现间隙变窄及其制造方法。 磁传感元件包括由第一间隔部分隔开的一对第一反铁磁层。 第一间隔层设置在第一间隔部分中。 第一间隔层具有与第一反铁磁性层相同的组成，并且具有比第一反铁磁层小的厚度的无序晶体结构。 第一自由磁性层设置在包括第一反铁磁层和第一间隔层的上表面的连续表面上。 磁感测元件还包括非磁性中间层，第二自由磁性层和由第二自由磁性层上的第二间隔部分隔开的一对第二反铁磁层。

公开(公告)号：US07158354B2

公开(公告)日：2007-01-02

申请号：US10642899

申请日：2003-08-18

申请人： Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa

发明人： Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093

摘要： A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose β values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.

摘要翻译： 第一自由磁性层，第二自由磁性层，下部被钉扎的磁性层和上部被钉扎的磁性层由适当设定的β值的磁性材料形成，使得所有磁性层的上部 - 自旋传导电子的电阻 当自由磁性层的磁化改变为具有最低电阻时，其变得低于用于向下自旋传导电子的电子。 磁性检测元件表现出每区域电阻的增加的变化。

公开(公告)号：US20060227467A1

公开(公告)日：2006-10-12

申请号：US11396807

申请日：2006-04-03

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3263 ,  H01F10/3277 ,  H01F10/3281 ,  H01L43/08 ,  H01L43/10

摘要： There is provided a magnetic detecting element which can realize high reproduction power and reduce asymmetry of reproduction waveforms by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).

摘要翻译： 提供了一种通过设计自由磁性层或钉扎磁性层的构造来实现高再现能力并减少再现波形的不对称性的磁性检测元件，以及制造磁性检测元件的方法。 自由磁性层形成为具有CoMnZ合金层，CoMnX合金层和CoMnZ合金层的三层结构。 CoMnX合金层由金属化合物形成，其组成式由下式表示：（X是一个或多个元素 选自Ge，Sn，Ga和Sb中的一组，a，b和c是原子百分数，a + b + c = 100原子％）。 CoMnZ合金层由金属化合物形成，其组成式由下式表示：Z为Al或Si， d，e和f是原子百分比，d + e + f = 100原子％）。