公开(公告)号：US20070171580A1

公开(公告)日：2007-07-26

申请号：US11625170

申请日：2007-01-19

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Masahiko Ishizone ,  Yosuke Ide ,  Ryo Nakabayashi ,  Takuya Seino ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Masahiko Ishizone ,  Yosuke Ide ,  Ryo Nakabayashi ,  Takuya Seino ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10

摘要： Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer (upper magnetic layer) disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed in contact with the insulating barrier layer. The Fe composition ratio of the enhance layer is greater than that of the second pinned magnetic layer.

摘要翻译： 这里描述的是隧道式磁检测元件及其制造方法。 在隧道式磁检测元件中，包括在设置在绝缘阻挡层上的自由磁性层（上磁性层）中的增强层与绝缘阻挡层接触，绝缘阻挡层可以由诸如氧化钛的氧化物制成。 在绝缘阻挡层下方，形成与绝缘阻挡层接触的构成被钉扎磁性层的第二钉扎磁性层。 增强层的Fe组成比大于第二固定磁性层的Fe组成比。

公开(公告)号：US20070171579A1

公开(公告)日：2007-07-26

申请号：US11625147

申请日：2007-01-19

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08

摘要： Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed. The second pinned magnetic layer has a fcc structure in which crystal planes equivalent to a (111) plane are aligned parallel to a layer surface, and the insulating barrier layer is formed to have a rutile structure or the like. The enhance layer is formed to have a bcc structure in which crystal planes equivalent to a (110) plane are aligned parallel to a layer surface.

摘要翻译： 这里描述的是隧道式磁检测元件及其制造方法。 在隧道式磁检测元件中，包括在设置在绝缘阻挡层上的自由磁性层中的增强层与绝缘阻挡层接触，绝缘阻挡层可以由诸如氧化钛的氧化物制成。 在绝缘阻挡层下面，形成构成被钉扎磁性层的第二钉扎磁性层。 第二钉扎磁性层具有fcc结构，其中等同于（111）面的晶面平行于层表面排列，并且绝缘阻挡层形成为具有金红石结构等。 增强层形成为具有bcc结构，其中等同于（110）面的晶面平行于层表面排列。

公开(公告)号：US20070165337A1

公开(公告)日：2007-07-19

申请号：US11622918

申请日：2007-01-12

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10

摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

公开(公告)号：US07881024B2

公开(公告)日：2011-02-01

申请号：US11622918

申请日：2007-01-12

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10

摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

公开(公告)号：US07907370B2

公开(公告)日：2011-03-15

申请号：US11851570

申请日：2007-09-07

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.

摘要翻译： 公开了一种隧道式磁感应元件，其包括能够保持自由磁性层的有利的软磁性能并且与已知的隧道磁传感元件相比可以具有高电阻变化率（＆Dgr; R / R）的Mg-O绝缘屏障， 并且还公开了制造这种隧道磁传感元件的方法。 在Mg-O绝缘屏障上设置由Fe组成比X为约30〜100原子％的Co100-XFeX构成的增强层（第二磁性层）。 由此，可以减小自由磁层的磁致伸缩λ，并且可以增加电阻变化率（＆Dgr; R / R）。

公开(公告)号：US20080123223A1

公开(公告)日：2008-05-29

申请号：US11771876

申请日：2007-06-29

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33 ,  G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49032

摘要： A tunneling magnetic sensor has a multilayer part including, from bottom to top, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is formed of titanium magnesium oxide (TiMgO) and contains magnesium in an amount of about 4 to 20 atomic percent based on 100 atomic percent of the total content of titanium and magnesium. The insulating barrier layer thus does not have a high concentration of magnesium. This tunneling magnetic sensor can provide a higher rate of resistance change (ΔR/R) at a lower RA (the product of sensor resistance, R, and sensor area, A) than known tunneling magnetic sensors.

摘要翻译： 隧道磁传感器具有从底部到顶部包括钉扎磁性层，绝缘阻挡层和自由磁性层的多层部件。 绝缘阻挡层由钛镁氧化物（TiMgO）形成，并且以钛和镁的总含量的100原子％计含有约4至20原子％的镁。 绝缘阻挡层因此不具有高浓度的镁。 该隧道磁传感器可以比已知的隧道磁传感器在较低的RA（传感器电阻，R和传感器面积A的乘积）下提供更高的电阻变化率（DeltaR / R）。

公开(公告)号：US08023233B2

公开(公告)日：2011-09-20

申请号：US11945468

申请日：2007-11-27

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。

公开(公告)号：US20080253038A1

公开(公告)日：2008-10-16

申请号：US11888762

申请日：2007-08-02

申请人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.

摘要翻译： 隧道磁传感器包括磁化被固定在一个方向上的钉扎磁性层，绝缘阻挡层和磁化强度由外部磁场变化的自由磁性层，这些层按照从 底部。 由镁（Mg）制成的第一保护层设置在自由磁性层上。 与不包括第一保护层或包括由Al，Ti，Cu或Ir-Mn合金制成的第一保护层的常规磁传感器相比，隧道磁传感器具有较大的磁阻变化。 与常规磁传感器中包括的自由磁性层相比，自由磁层具有较低的磁致伸缩性。

公开(公告)号：US20080160326A1

公开(公告)日：2008-07-03

申请号：US11946569

申请日：2007-11-28

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由设置在自由磁性层上的铂（Pt）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，可以大大降低自由磁性层的磁致伸缩，同时保持高的电阻变化率。

公开(公告)号：US20080160325A1

公开(公告)日：2008-07-03

申请号：US11945468

申请日：2007-11-27

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。