Semiconductor device, method of fabricating the same, and display device including the same

    公开(公告)号:US11611027B2

    公开(公告)日:2023-03-21

    申请号:US17743028

    申请日:2022-05-12

    IPC分类号: H01L33/62 H01L33/38 H01L27/15

    摘要: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

    DISPLAY LAYER HAVING MONOLITHIC STRUCTURE AND DISPLAY DEVICE INCLUDING THE DISPLAY LAYER

    公开(公告)号:US20230005985A1

    公开(公告)日:2023-01-05

    申请号:US17545645

    申请日:2021-12-08

    IPC分类号: H01L27/15 H01L33/62

    摘要: A display device includes a display layer including a plurality of light-emitting devices and a plurality of switching devices in a one-to-one correspondence with the light-emitting devices, the plurality of light-emitting devices and the plurality of switching devices forming a monolithic structure, and a driving layer, wherein the plurality of light-emitting devices and the plurality of switching devices corresponding to the plurality of light-emitting devices are grouped into pixels and then arranged in the display layer, and the driving layer includes a plurality of driving devices configured to apply at least one driving signal to the display layer.

    Semiconductor device, method of fabricating the same, and display device including the same

    公开(公告)号:US11527642B2

    公开(公告)日:2022-12-13

    申请号:US16826926

    申请日:2020-03-23

    摘要: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

    Display device and method of fabricating the same

    公开(公告)号:US11502218B2

    公开(公告)日:2022-11-15

    申请号:US16871214

    申请日:2020-05-11

    IPC分类号: H01L33/00 H01L27/15 H01L33/50

    摘要: A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US11430374B2

    公开(公告)日:2022-08-30

    申请号:US16857362

    申请日:2020-04-24

    摘要: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

    High-resolution display device
    69.
    发明授权

    公开(公告)号:US11177315B2

    公开(公告)日:2021-11-16

    申请号:US16536514

    申请日:2019-08-09

    摘要: A high-resolution display device is provided. The high-resolution display device includes a light-emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of transparent electrodes respectively formed on the second semiconductor layer in sub-pixel regions, a first electrode connected to the first semiconductor layer, a plurality of second electrodes connected to the plurality of transparent electrodes, a color-converting layer arranged over the light-emitting layer and configured to emit light of a predetermined color based on light generated by the light-emitting layer, which are sequentially stacked on a substrate including a plurality of sub-pixel regions. One or more ion injection regions corresponding to current injection regions corresponding to the plurality of the sub-pixel regions is formed in the second semiconductor layer.