公开(公告)号：US20220025515A1

公开(公告)日：2022-01-27

申请号：US17497523

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho Lee ,  Yongsung Kim ,  Sanghoon Song ,  Wooyoung Yang ,  Changseung Lee ,  Sungjin Lim ,  Junsik Hwang

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  C23C16/44 ,  H01M4/04 ,  H01M10/052 ,  H01J37/32 ,  H01M4/13 ,  C23C16/00

Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

公开(公告)号：US10249604B2

公开(公告)日：2019-04-02

申请号：US14656298

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo Chu ,  Changyoul Moon ,  Sunghee Lee ,  Junsik Hwang

IPC: H01L23/48 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L33/00

Abstract: A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.