SEMICONDUCTOR DEVICES HAVING GATE ISOLATION LAYERS

    公开(公告)号:US20230290818A1

    公开(公告)日:2023-09-14

    申请号:US18200638

    申请日:2023-05-23

    CPC classification number: H01L29/0649 H01L29/785 H01L29/42364 H01L29/41791

    Abstract: A semiconductor device includes active regions on a substrate, a gate structure intersecting the active regions, a source/drain region on the active regions and at a side surface of the gate structure, a gate spacer between the gate structure and the source/drain region, the gate spacer contacting the side surface of the gate structure, a lower source/drain contact plug connected to the source/drain region, a gate isolation layer on the gate spacer, an upper end of the gate isolation layer being at a higher level than an upper surface of the gate structure and an upper surface of the lower source/drain contact plug, a capping layer covering the gate structure, the lower source/drain contact plug, and the gate isolation layer, and an upper source/drain contact plug connected to the lower source/drain contact plug and extending through the capping layer.

    DEVICE AND METHOD FOR TRANSMITTING AND RECEIVING CONTROL INFORMATION AND DATA IN COMMUNICATION SYSTEM

    公开(公告)号:US20230283429A1

    公开(公告)日:2023-09-07

    申请号:US18016580

    申请日:2021-07-19

    CPC classification number: H04L5/0051 H04L1/0003

    Abstract: The present disclosure relates to a 5G or pre-5G communication system for supporting a data transmission rate higher than that of a 4G communication system such as LTE. A method for transmitting information in a wireless communication system, according to an embodiment of the present disclosure, includes a CQI table configuration method, an MCS table configuration method, and an LBRM, PT-RS, and processing time determination method related thereto. A method by which a user equipment (UE) receives a phase tracking reference signal (PT-RS) in a wireless communication system, according to an embodiment of the present disclosure, comprises the step of confirming whether both a first parameter related to the time density of a PT-RS and a second parameter related to the frequency density of the PT-RS are set by the UE through upper layer signaling.

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