摘要:
A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要:
A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要:
A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要:
A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要:
A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provided between the first and second ferromagnetic layers and having a variable direction of magnetization, and a couple of electrodes configured to provide write current between the first and second ferromagnetic layers so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. At least one layer of the magnetic layers has magnetization substantially fixed to a first direction. Two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current is passed.
摘要:
A magneto-resistance effect element of the present invention allows detection of a micro-bit signal with a high sensitivity. The magneto-resistance effect element is provided with a first magnetic substance layer, a spacer layer stacked on the first magnetic substance layer, a second magnetic substance layer stacked on the spacer, an insulating layer positioned adjacent to a stacked structure comprising the first magnetic substance layer, the spacer layer and the second magnetic substance layer, a gate electrode positioned adjacent to the insulating layer, and a magnetism sensitive region controlled by a voltage applied to the gate electrode.
摘要:
A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.
摘要:
A magnetoresistive effect element includes: a magnetoresistive effect film including a magnetization free layer, a magnetization fixed layer, and an intermediate layer placed between them; a magnetic coupling layer; a ferromagnetic layer; an antiferromagnetic layer; a bias mechanism portion applying a bias magnetic field to the magnetization free layer in a direction nearly parallel to a film surface of the magentoresistive effect film and nearly perpendicular to a magnetization direction of the magnetization fixed layer; and a pair of electrodes to pass a current in a direction going from the magnetization fixed layer to the magnetization free layer, and its bias point is more than 50%.
摘要:
A magnetic element comprises a first magnetic reference part (A) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.
摘要:
A magnetic element, including a first magnetic reference part (a) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.