Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus
    61.
    发明申请
    Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
    磁阻效应器件及其制造方法,磁存储器,磁头和磁记录装置

    公开(公告)号:US20080213627A1

    公开(公告)日:2008-09-04

    申请号:US12073171

    申请日:2008-02-29

    IPC分类号: G11B5/39 B32B7/04 B32B15/04

    摘要: A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.

    摘要翻译: 磁阻效应器件包括:绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。 连接部不夹在第二铁磁层和磁偏置层之间。 连接部分由铁磁材料制成,并且在第一铁磁层和第二铁磁层之间电连接。 一种制造磁阻效应器件的方法包括:层叠第一和第二铁磁层以夹住绝缘体层,并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

    MAGNETIC CELL AND MAGNETIC MEMORY
    62.
    发明申请
    MAGNETIC CELL AND MAGNETIC MEMORY 有权
    磁性细胞和磁性记忆

    公开(公告)号:US20060187705A1

    公开(公告)日:2006-08-24

    申请号:US11405418

    申请日:2006-04-18

    IPC分类号: G11C11/14

    摘要: A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

    摘要翻译: 磁性单元包括第一铁磁层,其磁化基本上固定在第一方向上; 第二铁磁层,其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层,所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。 可以通过在第一和第二铁磁层之间通过电流,在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

    Magnetic cell and magnetic memory
    63.
    发明申请

    公开(公告)号:US20060007730A1

    公开(公告)日:2006-01-12

    申请号:US11227493

    申请日:2005-09-16

    IPC分类号: G11C11/14

    摘要: A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

    Magnetic cell and magnetic memory
    64.
    发明授权
    Magnetic cell and magnetic memory 有权
    磁性细胞和磁记忆

    公开(公告)号:US06956766B2

    公开(公告)日:2005-10-18

    申请号:US10721549

    申请日:2003-11-26

    IPC分类号: G11C11/15 G11C11/14

    摘要: A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

    摘要翻译: 磁性电池包括:第一铁磁层,其磁化基本上固定在第一方向上; 第二铁磁层,其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层,所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。 可以通过在第一和第二铁磁层之间通过电流,在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

    Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same
    65.
    发明授权
    Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same 有权
    磁性装置可减少电流驱动磁反转和磁存储器中的反转电流

    公开(公告)号:US07486486B2

    公开(公告)日:2009-02-03

    申请号:US10954099

    申请日:2004-09-30

    IPC分类号: G11B5/127

    CPC分类号: G11C11/15 G11B5/1276

    摘要: A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provided between the first and second ferromagnetic layers and having a variable direction of magnetization, and a couple of electrodes configured to provide write current between the first and second ferromagnetic layers so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. At least one layer of the magnetic layers has magnetization substantially fixed to a first direction. Two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current is passed.

    摘要翻译: 磁性装置包括第一铁磁层,其中磁性层和一个或多个非磁性层交替堆叠,具有基本上固定在第二方向上的磁化的第二铁磁层;设置在第一和第二铁磁层之间的第三铁磁层, 可变磁化方向,以及配置成在第一和第二铁磁层之间提供写入电流的一对电极,使得第三铁磁层的磁化方向根据电流的方向来确定。 至少一层磁性层具有大致固定在第一方向上的磁化。 两层或多层磁性层通过非磁性层铁磁耦合。 铁磁耦合具有这样的强度,使得当写入电流通过时,保持磁性层的平行磁性取向。

    Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween
    67.
    发明授权
    Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween 有权
    其中自由层包括铁磁层和插入其间的非磁性层的磁阻元件

    公开(公告)号:US07561385B2

    公开(公告)日:2009-07-14

    申请号:US11087762

    申请日:2005-03-24

    IPC分类号: G11B5/39

    CPC分类号: H01L43/08 G11B5/39

    摘要: A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.

    摘要翻译: 包括具有插入其间具有非磁性层的两个铁磁层的自由层的磁阻元件以反铁磁方式彼此耦合,其中至少一个铁磁层的总磁化的绝对值之间的差异在其中 磁化方向是第一方向,并且其中磁化方向是与第一方向相反的第二方向的至少一个铁磁层的磁化总和的绝对值等于或小于5×10-15emu,并且 平行于铁磁性层的基板的平面随着平面远离基板而变小。

    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method of magnetoresistive effect element
    68.
    发明申请
    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method of magnetoresistive effect element 审中-公开
    磁阻效应元件,磁头,磁再现装置和磁阻效应元件的制造方法

    公开(公告)号:US20070195469A1

    公开(公告)日:2007-08-23

    申请号:US11595996

    申请日:2006-11-13

    IPC分类号: G11B5/33 G11B5/127

    摘要: A magnetoresistive effect element includes: a magnetoresistive effect film including a magnetization free layer, a magnetization fixed layer, and an intermediate layer placed between them; a magnetic coupling layer; a ferromagnetic layer; an antiferromagnetic layer; a bias mechanism portion applying a bias magnetic field to the magnetization free layer in a direction nearly parallel to a film surface of the magentoresistive effect film and nearly perpendicular to a magnetization direction of the magnetization fixed layer; and a pair of electrodes to pass a current in a direction going from the magnetization fixed layer to the magnetization free layer, and its bias point is more than 50%.

    摘要翻译: 磁阻效应元件包括:包含磁化自由层,磁化固定层和置于它们之间的中间层的磁阻效应膜; 磁耦合层; 铁磁层; 反铁磁层; 偏置机构部分,沿着与磁阻效应膜的膜表面几乎平行的方向,几乎垂直于磁化固定层的磁化方向,向无磁化层施加偏置磁场; 以及一对电极,使电流沿着从磁化固定层向磁化自由层的方向通过,其偏压点大于50%。

    Magnetic element and magnetic element array
    69.
    发明授权
    Magnetic element and magnetic element array 失效
    磁性元件和磁性元件阵列

    公开(公告)号:US06906949B1

    公开(公告)日:2005-06-14

    申请号:US10401865

    申请日:2003-03-31

    摘要: A magnetic element comprises a first magnetic reference part (A) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.

    摘要翻译: 磁性元件包括:第一磁性参考部分(A),包括基本上沿第一方向被钉扎在磁化(M 1)中的第一铁磁物质;第二磁性参考部分(E),包括在磁化(M 3)中被钉扎的第二铁磁性物质, 基本上在第二方向上的磁记录部分(C)和设置在第一和第二磁参考部分之间的磁记录部分(C)。 磁记录部分包括第三铁磁物质。 自旋转移中间部分(B)设置在第一磁参考部分和磁记录部分之间。 中间部分(D)设置在第二磁参考部分和磁记录部分之间。 第三铁磁性物质的磁化强度(M 2)可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。 可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。

    Magnetic element and magnetic element array
    70.
    发明授权
    Magnetic element and magnetic element array 失效
    磁性元件和磁性元件阵列

    公开(公告)号:US07042762B2

    公开(公告)日:2006-05-09

    申请号:US11118443

    申请日:2005-05-02

    IPC分类号: G11C11/15

    摘要: A magnetic element, including a first magnetic reference part (a) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.

    摘要翻译: 一种磁性元件,包括第一磁性参考部分(a),其包括基本上沿第一方向被钉扎在磁化(M 1)中的第一铁磁性物质,第二磁性参考部分(E),包括在磁化中被钉扎的第二铁磁性物质(M 3 )和设置在第一和第二磁性参考部分之间的磁记录部分(C)。 磁记录部分包括第三铁磁物质。 自旋转移中间部分(B)设置在第一磁参考部分和磁记录部分之间。 中间部分(D)设置在第二磁参考部分和磁记录部分之间。 第三铁磁性物质的磁化强度(M 2)可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。 可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。