公开(公告)号：US20070195469A1

公开(公告)日：2007-08-23

申请号：US11595996

申请日：2006-11-13

申请人： Masahiro Takashita ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Shiho Nakamura

发明人： Masahiro Takashita ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Shiho Nakamura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3932

摘要： A magnetoresistive effect element includes: a magnetoresistive effect film including a magnetization free layer, a magnetization fixed layer, and an intermediate layer placed between them; a magnetic coupling layer; a ferromagnetic layer; an antiferromagnetic layer; a bias mechanism portion applying a bias magnetic field to the magnetization free layer in a direction nearly parallel to a film surface of the magentoresistive effect film and nearly perpendicular to a magnetization direction of the magnetization fixed layer; and a pair of electrodes to pass a current in a direction going from the magnetization fixed layer to the magnetization free layer, and its bias point is more than 50%.

摘要翻译： 磁阻效应元件包括：包含磁化自由层，磁化固定层和置于它们之间的中间层的磁阻效应膜; 磁耦合层; 铁磁层; 反铁磁层; 偏置机构部分，沿着与磁阻效应膜的膜表面几乎平行的方向，几乎垂直于磁化固定层的磁化方向，向无磁化层施加偏置磁场; 以及一对电极，使电流沿着从磁化固定层向磁化自由层的方向通过，其偏压点大于50％。

公开(公告)号：US08982611B2

公开(公告)日：2015-03-17

申请号：US13526961

申请日：2012-06-19

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Junichi Akiyama

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Junichi Akiyama

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/1673 ,  G11C11/161 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.

摘要翻译： 磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 此外，通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来进行读出。

公开(公告)号：US20130235653A1

公开(公告)日：2013-09-12

申请号：US13713482

申请日：2012-12-13

申请人： Tsuyoshi KONDO ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi KONDO ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161

摘要： A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.

摘要翻译： 根据实施例的磁存储器包括：在垂直于第一方向的平面中沿第一方向延伸并具有圆形环形形状的磁性结构， 形成在所述磁性结构的外表面上的非磁性层，所述外表面沿所述第一方向延伸; 以及形成在非磁性层的表面的一部分上的至少一个参考部分，所述表面位于与磁性结构相反的一侧，所述至少一个参考部分包含磁性材料。

公开(公告)号：US20130077395A1

公开(公告)日：2013-03-28

申请号：US13422030

申请日：2012-03-16

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： G11C11/14 ,  G11C11/161 ,  G11C11/1675

摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.

摘要翻译： 一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性 在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。

公开(公告)号：US20120280769A1

公开(公告)日：2012-11-08

申请号：US13487769

申请日：2012-06-04

申请人： Tsuyoshi KONDO ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi KONDO ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： H01P1/218

CPC分类号： H01P1/20345 ,  H01P1/203 ,  H03C1/34

摘要： A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.

摘要翻译： 根据实施例的自旋波装置包括：输入互连件，其传输输入脉冲信号; 包括基底层的多层膜; 形成在所述多层膜上并在接收所述输入脉冲信号时产生自旋波的第一磁性层，所述自旋波通过所述第一磁性层传播; 多个输入电极，布置在第一磁性层上的直线上，连接到输入互连，并将输入脉冲信号传输到第一磁性层; 以及感测旋转波的多个感测电极，布置在第一磁性层上，并且与其中布置有输入电极的直线彼此不同的距离设置，满足以下等式：d = Vg× t0。

公开(公告)号：US07558103B2

公开(公告)日：2009-07-07

申请号：US11729982

申请日：2007-03-30

申请人： Shiho Nakamura ,  Yuichi Motoi ,  Shigeru Haneda ,  Hirofumi Morise ,  Takahiro Hirai

发明人： Shiho Nakamura ,  Yuichi Motoi ,  Shigeru Haneda ,  Hirofumi Morise ,  Takahiro Hirai

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/71 ,  H01H1/0094 ,  Y10S977/725 ,  Y10S977/943

摘要： A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.

摘要翻译： 根据本发明的实施例的磁性开关元件包括磁性元件，将磁性元件放置在其间的第一和第二电极，连接到第一和第二电极的电流控制部分，电流控制部分控制磁化方向 的无磁化部分，使得电流在磁化自由部分和磁化固定部分之间流动，具有固定端和自由端的可移动导电管和连接到固定端的固定端的第三电极 导电管。 以使得导电管的空间位置根据磁化自由部的磁化方向而变化的方式进行切换操作。

公开(公告)号：US20090052237A1

公开(公告)日：2009-02-26

申请号：US12107127

申请日：2008-04-22

申请人： Hirofumi Morise ,  Shiho Nakamura ,  Satoshi Yanagi ,  Yuichi Ohsawa ,  Daisuke Saida

发明人： Hirofumi Morise ,  Shiho Nakamura ,  Satoshi Yanagi ,  Yuichi Ohsawa ,  Daisuke Saida

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic memory element includes a laminated construction of a first electrode, a first pinned layer, a first intermediate layer, a memory layer, a second intermediate layer, a second pinned layer and a second electrode, and a third electrode coupled to the first intermediate layer and not directly coupled to the memory layer. The magnetization directions of the first pinned layer, the second pinned layer, and the memory layer are parallel or antiparallel to each other. The magnetization direction of the memory layer takes a first direction when the current is passed with a first polarity so that the current flowing through the first pinned layer exceeds a first threshold. The magnetization direction of the memory layer takes a second direction when the current is passed with a second polarity so that the current flowing through the first pinned layer exceeds a second threshold.

摘要翻译： 磁存储元件包括第一电极，第一被钉扎层，第一中间层，存储层，第二中间层，第二被钉扎层和第二电极的层压结构，以及耦合到第一中间体 层并且不直接耦合到存储器层。 第一被钉扎层，第二钉扎层和存储层的磁化方向彼此平行或反平行。 当电流以第一极性通过时，存储层的磁化方向取第一方向，使得流过第一被钉扎层的电流超过第一阈值。 当电流以第二极性通过时，存储层的磁化方向采取第二方向，使得流过第一被钉扎层的电流超过第二阈值。

公开(公告)号：US07486486B2

公开(公告)日：2009-02-03

申请号：US10954099

申请日：2004-09-30

申请人： Shiho Nakamura ,  Shigeru Haneda

发明人： Shiho Nakamura ,  Shigeru Haneda

IPC分类号： G11B5/127

CPC分类号： G11C11/15 ,  G11B5/1276

摘要： A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provided between the first and second ferromagnetic layers and having a variable direction of magnetization, and a couple of electrodes configured to provide write current between the first and second ferromagnetic layers so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. At least one layer of the magnetic layers has magnetization substantially fixed to a first direction. Two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current is passed.

摘要翻译： 磁性装置包括第一铁磁层，其中磁性层和一个或多个非磁性层交替堆叠，具有基本上固定在第二方向上的磁化的第二铁磁层;设置在第一和第二铁磁层之间的第三铁磁层， 可变磁化方向，以及配置成在第一和第二铁磁层之间提供写入电流的一对电极，使得第三铁磁层的磁化方向根据电流的方向来确定。 至少一层磁性层具有大致固定在第一方向上的磁化。 两层或多层磁性层通过非磁性层铁磁耦合。 铁磁耦合具有这样的强度，使得当写入电流通过时，保持磁性层的平行磁性取向。

公开(公告)号：US07126849B2

公开(公告)日：2006-10-24

申请号：US11227493

申请日：2005-09-16

申请人： Shiho Nakamura ,  Shigeru Haneda ,  Yuichi Ohsawa

发明人： Shiho Nakamura ,  Shigeru Haneda ,  Yuichi Ohsawa

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/224 ,  H01L27/228

摘要： A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

摘要翻译： 磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。 可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

公开(公告)号：US20050219768A1

公开(公告)日：2005-10-06

申请号：US11090074

申请日：2005-03-28

申请人： Shiho Nakamura ,  Shigeru Haneda ,  Hirofumi Morise

发明人： Shiho Nakamura ,  Shigeru Haneda ,  Hirofumi Morise

IPC分类号： H01F10/30 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/39

摘要： A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.

摘要翻译： 磁阻效应元件可以获得高输出，并且使得即使使感测电流流动，也可以使其在无磁化层中的磁化稳定。 磁阻效应元件具有磁化方向可变的磁化自由层，其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层，其中当没有外部磁 磁场存在，没有电流流动，磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行，磁化自由层的易磁化轴平行于在 磁化固定层，感测电流从磁化自由层流向磁化固定层。