摘要:
An image capturing apparatus for palm authentication captures images of a palm for use in palm authentication. In order to correctly guide the palm of a user into an image capturing region, on one side of a non-contact sensor unit for image capturing the palm, a front face guide is provided for supporting a wrist having a hand to be captured by the non-contact sensor unit. When the palm is to be captured for palm authentication, the front face guide enables guiding the palm naturally to an image capturing region of the sensor unit. Because the front face guide supports the wrist, the palm can correctly be positioned within an image capturing region of the sensor unit.
摘要:
A surface acoustic wave device includes front stage and rear stage surface acoustic wave elements, a signal wiring connecting between the front stage and rear stage surface acoustic wave elements, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A surface acoustic wave device includes a front stage surface acoustic wave resonator, a rear stage surface acoustic wave element, a signal wiring connecting between the front stage surface acoustic wave resonator and the rear stage surface acoustic wave element, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A communication device includes the surface acoustic wave device described above, a receiver circuit or a transmitter circuit.
摘要:
A swing arm support structure is provided in a motorcycle, in which first and second support arm portions are provided on a front portion of a swing arm. The support arm portions are pivotally supported by a power unit through first and second pivot shafts, so that rigidity and strength of the paired support arm portions is ensured. A flange is formed on the first pivot shaft, which extends at least partially up to an outer edge of a power unit case and projects radially outwardly from an end portion of the first pivot shaft adjacent the case. The flange portion is removably attached to the case. An outer end of an output shaft extends through and is supported by the first pivot shaft, and this outer end projects outwards of the first support arm portion. A drive gear is fixed to the outer end portion of the output shaft.
摘要:
The present invention provides a vacuum system including a vacuum pump capable of operating at a rotation rate controlled appropriately when a predetermined process is performed in a vacuum chamber, which contributes to energy conservation. The vacuum system serves as a semiconductor manufacturing system comprising a vacuum pump controller which has a gas flow mode and an auto-tuning mode for determining a rotation rate of a vacuum pump unit to set the rotation rate to a target value lower by a predetermined value than the full operation rate of gas flow rate control means under the condition that pressure within the process chamber is vacuum pressure necessary for the gas flow mode. The vacuum pump controller has means for reducing the rotation rate of the vacuum pump unit from a rated rotation rate in the auto-tuning mode under the condition that pressure within the process chamber is vacuum necessary for the gas flow mode, to determine whether or not the operation rate of an APC valve reaches a target value, and means for storing, as the rotation rate necessary for the gas flow mode, the rotation rate of the vacuum pump unit, which is obtained when it is determined that the operation rate of the APC valve reaches the target value.
摘要:
A method for manufacturing a semiconductor device includes the steps of (a) forming a first region by selectively ion-implanting a second conductive type impurity into a first conductive type semiconductor layer without thermally diffusing an impurity, (b) forming a gate electrode including an edge vicinity region that is aligned with the first region in the horizontal position, and (c) forming a body layer including the first region and a second region that is formed adjacent to the first region and self-aligned with the first region and an edge of the gate electrode by forming the second region with a step of selectively ion-implanting a second conductive type impurity into the first conductive type semiconductor layer without thermally diffusing an impurity.
摘要:
It is an object to provide an optical transparent member capable of maintaining a high-performance antireflection effect for a base over a long period of time, and an optical system using the same, specifically an optical transparent member including on a base a layer containing SiO2 as a main component, a layer containing Al2O3 as a main component, and a plate crystal layer formed from plate crystals containing Al2O3 as a main component, wherein the surface of the plate crystal layer has a shape of irregularities, and an optical system using the same.
摘要:
A remote game system has a game machine, which has a manual operation unit receiving a manual operation instruction, and a remote controller. The remote controller communicates with the game machine through a communication network, and controls operation of the game machine through the communication network. The game machine has an exclusion unit, and when one of a remote operation instruction for playing a game from the remote controller and a manual operation instruction for directly playing the game from the manual operation unit has been received, inhibits one of the remote operation instruction or the manual operation instruction.
摘要:
A surface acoustic wave apparatus comprises a piezoelectric substrate 17 on the bottom face of which IDT electrodes 3 and 4 and an annular ground electrode 6 which encloses the IDT electrodes 3 and 4 and is connected to the IDT electrode 3, and a base substrate on the top face of which an annular ground conductor 7 is formed and which has an internal ground conductor layer 10a and a bottom face ground conductor layer 11a connected to the annular ground conductor 7 and an internal ground conductor layer 10b and a bottom face ground conductor layer 11b connected to the IDT electrode 4. A first ground conductor composed of the internal ground conductor layer 10a and the bottom face ground conductor layer 11a is electrically separated from a second ground conductor composed of the internal ground conductor layer 10b and the bottom face ground conductor layer 11b. The apparatus has an excellent out-of-band attenuation characteristic.
摘要:
Auxiliary seals are provided on a surface of a first metal separator, between load receivers and an oxygen-containing gas supply passage, a fuel gas supply passage, an oxygen-containing gas discharge passage, and a fuel gas discharge passage, in relatively wide areas. The cross sectional shape of the auxiliary seal is the same as those of a flow field seal and ring-like seals, and the auxiliary seals are formed independently from the flow field seal and the ring-like seals.
摘要:
The present invention provides a magnetic recording medium wherein a fine non-magnetic inorganic powder, the dispersibility of which is improved, is used to improve the surface smoothness of a lower non-magnetic layer, thereby giving an excellent surface smoothness of an upper magnetic layer and electromagnetic conversion property; and a production process thereof. A magnetic recording medium comprising at least a non-magnetic support, a lower non-magnetic layer on one surface of the non-magnetic support, and an upper magnetic layer on the lower non-magnetic layer, wherein the upper magnetic layer contains at least a ferromagnetic powder, and a binder resin material, and the lower non-magnetic layer contains at least carbon black, iron oxide, and a binder resin material, and the iron oxide has an average major axis length of 30 to 100 nm, and a specific surface area based on the BET method of 80 to 120 m2/g, and the iron oxide contains moisture in an amount per unit specific surface area of 0.13 to 0.25 mg/m2.