Positive photosensitive composition
    61.
    发明授权
    Positive photosensitive composition 有权
    正光敏组合物

    公开(公告)号:US06858370B2

    公开(公告)日:2005-02-22

    申请号:US10079414

    申请日:2002-02-22

    IPC分类号: G03F7/004 G03F7/039

    摘要: A positive photosensitive composition comprises: (A) an acid generator capable of generating an acid upon irradiation with one of an actinic ray and a radiation; and (B) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and capable of decomposing by the action of an acid to increase the solubility in an alkali developer, wherein the acid generator (A) comprises at least two compounds of a sulfonium salt compound not having an aromatic ring, a triarylsulfonium salt compound, and a compound having a phenacylsulfonium salt structure.

    摘要翻译: 正型光敏组合物包括:(A)能够在用光化射线和辐射之一照射时产生酸的酸发生剂; 和(B)具有单环或多环脂环族烃结构并且能够通过酸的作用分解以增加在碱性显影剂中的溶解度的树脂,其中酸产生剂(A)包含至少两种锍盐化合物 不具有芳香环,三芳基锍盐化合物和具有苯甲酰甲基锍盐结构的化合物。

    Positive photosensitive composition
    62.
    发明授权
    Positive photosensitive composition 失效
    正光敏组合物

    公开(公告)号:US06818377B2

    公开(公告)日:2004-11-16

    申请号:US10176067

    申请日:2002-06-21

    IPC分类号: G03F7004

    摘要: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

    摘要翻译: 一种正型光敏组合物,其包含(A)在用光化射线或辐射照射时产生酸的化合物,和(B-1)具有通过酸作用分解的基团的树脂,以增加在碱性显影中的溶解度 溶液,并且如说明书中所述含有至少一种由式(I),(II)和(III)表示的结构,或(B-2)具有至少一个由式(Ib)表示的一价多元脂环基团的树脂,如 说明书和通过酸的作用而分解以增加在碱性显影液中的溶解度的基团。 含有本发明树脂的正型感光性组合物对于远紫外线具有高透射率,特别是波长为220nm以下,表现出良好的耐干蚀刻性。 此外,当使用波长为250nm以下,特别是220nm以下的远紫外光(特别是ArF准分子激光)时,正型感光性组合物显示出高灵敏度,良好的分辨率和良好的图案分布,作为曝光光源, 因此可以有效地用于形成半导体元件的制造所需的精细图案。

    Positive photoresist composition for far ultraviolet exposure
    63.
    发明授权
    Positive photoresist composition for far ultraviolet exposure 失效
    用于远紫外线曝光的正光致抗蚀剂组合物

    公开(公告)号:US06794108B1

    公开(公告)日:2004-09-21

    申请号:US09541597

    申请日:2000-04-03

    IPC分类号: G03F7004

    摘要: The present invention provides a positive photoresist composition for far ultraviolet exposure, which comprises a polymer having at least one of a repeating unit represented by formula (Ia) and a repeating unit represented by formula (Ib), and a repeating unit represented by formula (II), and having a group capable of decomposing by the action of an acid: wherein R1 and R2 each represents hydrogen atom, a cyano group, a hydroxyl group, —COOH, —COOR5, —CO—NH—R6, —CO—NH—SO2—R6, an alkyl group, an alkoxy group, a cyclic hydrocarbon group or a —Y group, X represents —O—, —S—, —NH—, —NHSO2— or —NHSO2NH—, A represents a single bond or a divalent linking group, Z2 represents —O— or —N(R3)—, R11 and R12 each represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group, Z1 represents an atomic group necessary for forming an alicyclic structure which contains two bonded carbon atoms (C—C), and Y, R3, R5 and R6 are as defined in the specification.

    摘要翻译: 本发明提供一种用于远紫外线曝光的正性光致抗蚀剂组合物,其包含具有式(Ia)表示的重复单元和式(Ib)表示的重复单元中的至少一种的聚合物和由式(Ib)表示的重复单元, II),并且具有能够通过酸的作用分解的基团:其中R 1和R 2各自表示氢原子,氰基,羟基,-COOH,-COOR 5,-CO-NH-R 6,-CO- NH-SO 2 -R 6,烷基,烷氧基,环状烃基或-Y基,X表示-O - , - S - , - NH-,-NHSO 2 - 或-NHSO 2 NH-,A表示单 键或二价连接基团,Z 2表示-O-或-N(R 3) - ,R 11和R 12各自表示氢原子,氰基,卤素原子或烷基,Z 1表示形成 含有两个键合碳原子(CC)的脂环结构,Y,R3,R5和R6如说明书中所定义。

    Positive photoresist composition for far ultraviolet exposure
    64.
    发明授权
    Positive photoresist composition for far ultraviolet exposure 有权
    用于远紫外线曝光的正光致抗蚀剂组合物

    公开(公告)号:US06787283B1

    公开(公告)日:2004-09-07

    申请号:US09620708

    申请日:2000-07-20

    IPC分类号: G03F7039

    摘要: Disclosed is a positive photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in alkali, containing a repeating unit having a group represented by the following formula (I): wherein R1 represents hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, which may have a substituent, R1 to R7, which may be the same or different, each represents hydrogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent or an alkenyl group which may have a substituent, provided that at least one of R6 and R7 is a group exclusive of hydrogen atom and R6 and R7 may combine to form a ring, and m and n each independently represents 0 or 1, provided that m and n are not 0 at the same time. The positive photoresist composition can further comprise a fluorine-containing and/or silicon-containing surfactant and at least one first solvent selected from propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate and 3-ethoxypropionate.

    摘要翻译: 公开了一种正型光致抗蚀剂组合物,其包含(A)在用光化射线或辐射照射时能够产生酸的化合物和(B)能够在酸的作用下分解以增加在碱中的溶解度的树脂,其含有重复单元 具有由下式(I)表示的基团:其中R 1表示氢原子或可具有取代基的具有1至4个碳原子的烷基,R 1至R 7可以相同或不同,各自表示氢 原子,可以具有取代基的烷基,可以具有取代基的环烷基或可以具有取代基的烯基,条件是R 6和R 7中的至少一个是不是氢原子的基团,并且R 6和R 7可以 组合形成环,m和n各自独立地表示0或1,条件是m和n不同时为0。 正性光致抗蚀剂组合物可以进一步包括含氟和/或含硅表面活性剂和至少一种选自丙二醇单甲醚乙酸酯,丙二醇单甲醚丙酸酯,3-甲氧基丙酸甲酯,3-甲氧基丙酸乙酯,甲基3 乙氧基丙酸酯和3-乙氧基丙酸酯。

    Positive resist composition
    65.
    发明授权
    Positive resist composition 有权
    正抗蚀剂组成

    公开(公告)号:US06787282B2

    公开(公告)日:2004-09-07

    申请号:US10253484

    申请日:2002-09-25

    申请人: Kenichiro Sato

    发明人: Kenichiro Sato

    IPC分类号: G03F7004

    CPC分类号: G03F7/0397 Y10S430/111

    摘要: A positive resist composition comprising (A) a resin, which increases a solubility rate in an alkali developing solution by the action of an acid, containing a repeating unit represented by formula (I) defined in the specification, a repeating unit represented by formula (II) defined in the specification and a repeating unit represented by formula (III) defined in the specification, and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation.

    摘要翻译: 一种正型抗蚀剂组合物,其包含(A)树脂,其通过酸的作用增加碱显影液中的溶解度,该酸包含由说明书中定义的式(I)表示的重复单元,由式( II)和由说明书中定义的式(III)表示的重复单元,和(B)在光化射线或辐射照射时产生酸的化合物。

    Positive resist fluid and positive resist composition
    67.
    发明授权
    Positive resist fluid and positive resist composition 有权
    正抗蚀液和正光刻胶组成

    公开(公告)号:US06420082B1

    公开(公告)日:2002-07-16

    申请号:US09438789

    申请日:1999-11-12

    IPC分类号: G03F7039

    摘要: The present invention provides a positive resist fluid excellent in the storage stability of the fluid and in defocus latitude depended on line pitch, and a positive photoresist composition for far ultraviolet exposure which forms a resist pattern having excellent defocus latitude depended on line pitch and has excellent sensitivity to short-wavelength exposure lights. The positive resist fluid comprises a resin which contains repeating units represented by formula (I) as defined in the specification, a photo-acid generator, and a solvent and the positive photoresist composition for far ultraviolet exposure comprises a resin which contains both alkali-soluble groups protected by groups containing an alicyclic hydrocarbon structure and represented by at least one of formulae (pI) to (pVI) and groups represented by formula (qI): —A—X—R5 as defined in the specification.

    摘要翻译: 本发明提供一种在流体的保存稳定性和取决于线间距的散焦纬度方面优异的正性抗蚀剂流体和用于远紫外线曝光的正性光致抗蚀剂组合物,其形成具有优异的散焦纬度的抗蚀图案,其依赖于线间距,并且具有优异的 对短波长曝光灯的敏感度。 正型抗蚀剂流体包括含有本说明书中定义的式(I)表示的重复单元的树脂,光酸产生剂和溶剂,并且用于远紫外线照射的正性光致抗蚀剂组合物包含含有碱溶性的树脂 由含有脂环族烃结构的基团保护并且由式(pI)至(pVI)中的至少一个表示的基团和由式(qI)表示的基团保护的基团:如说明书中所定义。

    Positive photosensitive resin
    68.
    发明授权
    Positive photosensitive resin 失效
    正感光性树脂

    公开(公告)号:US6159656A

    公开(公告)日:2000-12-12

    申请号:US344141

    申请日:1999-06-24

    摘要: The present invention provides a positive photosensitive resin composition which, when exposed to far ultraviolet rays, in particular, ArF excimer laser light, shows excellent performances especially with respect to the residual film ratio, resist profile, resolution, and dry-etching resistance and does not pose the problem of development defects. The positive photosensitive resin composition comprising:(A) a compound which generates an acid upon irradiation with actinic rays,(B) a polymer having specific structures represented by formula (Ia), (Ib), (Ic) or (Id) defined in the specification,(C) a nitrogen-containing basic compound, and(D) at least one of a fluorine type surfactant and a silicone type surfactant.

    摘要翻译: 本发明提供一种正型感光性树脂组合物,特别是在远紫外线照射ArF准分子激光时,表现出优异的性能,特别是在残留膜比,抗蚀剂轮廓,分辨率和耐干蚀刻性方面,特别是 不构成发展缺陷的问题。 正型感光性树脂组合物,其包含:(A)在光化射线照射时产生酸的化合物,(B)具有由式(Ia),(Ib),(Ic)或(Id)表示的特定结构的聚合物, (C)含氮碱性化合物和(D)氟型表面活性剂和硅氧烷型表面活性剂中的至少一种。

    Positive photoresist composition for exposure to far ultraviolet light
    69.
    发明授权
    Positive photoresist composition for exposure to far ultraviolet light 失效
    用于暴露于远紫外光的正性光致抗蚀剂组合物

    公开(公告)号:US6159655A

    公开(公告)日:2000-12-12

    申请号:US264036

    申请日:1999-03-08

    申请人: Kenichiro Sato

    发明人: Kenichiro Sato

    摘要: A positive photoresist composition position for exposure to far ultraviolet light, which comprises a resin decomposing by the action of an acid to increase its solubility in an alkali, and a compound generating an acid by irradiation with an actinic ray or radiation; with the resin comprising repeating units having particular structures, including particular alicyclic structures, and groups decomposing by the action of an acid.

    摘要翻译: 用于暴露于远紫外光的正性光致抗蚀剂组合物位置,其包含通过酸的作用分解以增加其在碱中的溶解度的树脂和通过用光化射线或辐射照射产生酸的化合物; 所述树脂包含具有特定结构的重复单元,包括特定的脂环结构和通过酸的作用分解的基团。

    Negative working photoresist composition
    70.
    发明授权
    Negative working photoresist composition 有权
    负性工作光致抗蚀剂组成

    公开(公告)号:US6103449A

    公开(公告)日:2000-08-15

    申请号:US229684

    申请日:1999-01-13

    申请人: Kenichiro Sato

    发明人: Kenichiro Sato

    摘要: A negative working photoresist composition which has high suitability for exposure to far ultraviolet and comprises an alkali-soluble resin, a compound capable of generating an acid upon irradiation with actinic rays or radiations, and a compound capable of lowering the solubility of the alkali-soluble resin in a developer in the presence of the acid, the alkali-soluble resin comprising a polymer containing at least the repeating units derived from norbornene skeleton-containing monomers and crosslinking groups. ##STR1##

    摘要翻译: 具有高度适用于远紫外线的负性光致抗蚀剂组合物,其包含碱溶性树脂,在光化射线或辐射照射时能够产生酸的化合物,以及能够降低碱溶性溶解度的化合物 在酸存在下在显影剂中的树脂,所述碱溶性树脂包含至少含有衍生自含降冰片烯骨架的单体和交联基团的重复单元的聚合物。