摘要:
A positive photosensitive composition comprises: (A) an acid generator capable of generating an acid upon irradiation with one of an actinic ray and a radiation; and (B) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and capable of decomposing by the action of an acid to increase the solubility in an alkali developer, wherein the acid generator (A) comprises at least two compounds of a sulfonium salt compound not having an aromatic ring, a triarylsulfonium salt compound, and a compound having a phenacylsulfonium salt structure.
摘要:
A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.
摘要:
The present invention provides a positive photoresist composition for far ultraviolet exposure, which comprises a polymer having at least one of a repeating unit represented by formula (Ia) and a repeating unit represented by formula (Ib), and a repeating unit represented by formula (II), and having a group capable of decomposing by the action of an acid: wherein R1 and R2 each represents hydrogen atom, a cyano group, a hydroxyl group, —COOH, —COOR5, —CO—NH—R6, —CO—NH—SO2—R6, an alkyl group, an alkoxy group, a cyclic hydrocarbon group or a —Y group, X represents —O—, —S—, —NH—, —NHSO2— or —NHSO2NH—, A represents a single bond or a divalent linking group, Z2 represents —O— or —N(R3)—, R11 and R12 each represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group, Z1 represents an atomic group necessary for forming an alicyclic structure which contains two bonded carbon atoms (C—C), and Y, R3, R5 and R6 are as defined in the specification.
摘要:
Disclosed is a positive photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in alkali, containing a repeating unit having a group represented by the following formula (I): wherein R1 represents hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, which may have a substituent, R1 to R7, which may be the same or different, each represents hydrogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent or an alkenyl group which may have a substituent, provided that at least one of R6 and R7 is a group exclusive of hydrogen atom and R6 and R7 may combine to form a ring, and m and n each independently represents 0 or 1, provided that m and n are not 0 at the same time. The positive photoresist composition can further comprise a fluorine-containing and/or silicon-containing surfactant and at least one first solvent selected from propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate and 3-ethoxypropionate.
摘要:
A positive resist composition comprising (A) a resin, which increases a solubility rate in an alkali developing solution by the action of an acid, containing a repeating unit represented by formula (I) defined in the specification, a repeating unit represented by formula (II) defined in the specification and a repeating unit represented by formula (III) defined in the specification, and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation.
摘要:
The positive image-forming material comprises a resin including a repeating unit corresponding to a specific monomer having an &agr;-heteromethyl structure.
摘要:
The present invention provides a positive resist fluid excellent in the storage stability of the fluid and in defocus latitude depended on line pitch, and a positive photoresist composition for far ultraviolet exposure which forms a resist pattern having excellent defocus latitude depended on line pitch and has excellent sensitivity to short-wavelength exposure lights. The positive resist fluid comprises a resin which contains repeating units represented by formula (I) as defined in the specification, a photo-acid generator, and a solvent and the positive photoresist composition for far ultraviolet exposure comprises a resin which contains both alkali-soluble groups protected by groups containing an alicyclic hydrocarbon structure and represented by at least one of formulae (pI) to (pVI) and groups represented by formula (qI): —A—X—R5 as defined in the specification.
摘要:
The present invention provides a positive photosensitive resin composition which, when exposed to far ultraviolet rays, in particular, ArF excimer laser light, shows excellent performances especially with respect to the residual film ratio, resist profile, resolution, and dry-etching resistance and does not pose the problem of development defects. The positive photosensitive resin composition comprising:(A) a compound which generates an acid upon irradiation with actinic rays,(B) a polymer having specific structures represented by formula (Ia), (Ib), (Ic) or (Id) defined in the specification,(C) a nitrogen-containing basic compound, and(D) at least one of a fluorine type surfactant and a silicone type surfactant.
摘要:
A positive photoresist composition position for exposure to far ultraviolet light, which comprises a resin decomposing by the action of an acid to increase its solubility in an alkali, and a compound generating an acid by irradiation with an actinic ray or radiation; with the resin comprising repeating units having particular structures, including particular alicyclic structures, and groups decomposing by the action of an acid.
摘要:
A negative working photoresist composition which has high suitability for exposure to far ultraviolet and comprises an alkali-soluble resin, a compound capable of generating an acid upon irradiation with actinic rays or radiations, and a compound capable of lowering the solubility of the alkali-soluble resin in a developer in the presence of the acid, the alkali-soluble resin comprising a polymer containing at least the repeating units derived from norbornene skeleton-containing monomers and crosslinking groups. ##STR1##