公开(公告)号：US20070153222A1

公开(公告)日：2007-07-05

申请号：US11477909

申请日：2006-06-30

申请人： Gyoo-Chul Jo ,  Jin-Wuk Kim ,  Chang-Hee Lee

发明人： Gyoo-Chul Jo ,  Jin-Wuk Kim ,  Chang-Hee Lee

IPC分类号： G02F1/13

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A method for fabricating a liquid crystal display (LCD) device wherein a photolithography technique is replaced by soft lithography is disclosed. The method includes: forming a thin film transistor array substrate; forming a color filter substrate; bonding the thin film transistor array substrate and the color filter substrate; and applying a liquid crystal between the thin film transistor array substrate and the color filter substrate, wherein at least one of the forming the thin film transistor array substrate and the forming the color filter substrate includes a pattern forming method using a soft mold. The pattern forming method may be a soft lithography process that includes: contacting a soft mold having a particular pattern with a surface of a buffer layer and applying a constant heat to the soft mold and buffer layer to transfer the particular pattern onto the buffer layer.

摘要翻译： 公开了一种通过软光刻替代光刻技术的液晶显示（LCD）器件的制造方法。 该方法包括：形成薄膜晶体管阵列基板; 形成滤色器基板; 接合薄膜晶体管阵列基板和滤色器基板; 并且在薄膜晶体管阵列基板和滤色器基板之间施加液晶，其中形成薄膜晶体管阵列基板和形成滤色器基板的至少一个包括使用软模的图案形成方法。 图案形成方法可以是软光刻工艺，其包括：使具有特定图案的软模具与缓冲层的表面接触，并向软模和缓冲层施加恒定的热量以将特定图案转移到缓冲层上。

公开(公告)号：US06780784B2

公开(公告)日：2004-08-24

申请号：US10015650

申请日：2001-12-17

申请人： Gyoo-Chul Jo ,  Ki-Sung Chae

发明人： Gyoo-Chul Jo ,  Ki-Sung Chae

IPC分类号： H01L21302

CPC分类号： H01L29/66765 ,  C09K13/04 ,  C09K13/06 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L29/458

摘要： A method of forming an array substrate for use in a thin film transistor liquid crystal display (TFT-LCD) device includes forming a first metal layer on a substrate, patterning the first metal layer to form a gate line and a gate electrode extended from the gale line, forming a gate insulation layer on the substrate to cover the patterned first metal layer, forming an active layer on the gate insulation layer and over the gate electrode, forming an ohmic contact layer on the active layer, forming a second metal layer on the gate insulation layer to rover the ohmic contact layer and the active layer, forming a third copper metal layer on the second metal layer, simultaneously patterning the second metal layer and the third copper metal layer to form a double-layered data line, a double-layered source electrode and a double-layered drain electrode using an etchant that includes hydrogen peroxide (H2O2), a H2O2 stabilizer, and a neutral salt, and forming a pixel electrode contacting the double-layered drain electrode.

摘要翻译： 一种形成用于薄膜晶体管液晶显示器（TFT-LCD）器件的阵列衬底的方法包括在衬底上形成第一金属层，图案化第一金属层以形成栅极线和从 在所述衬底上形成栅极绝缘层以覆盖所述图案化的第一金属层，在所述栅极绝缘层上和所述栅电极上形成有源层，在所述有源层上形成欧姆接触层，在所述有源层上形成第二金属层 所述栅极绝缘层流动所述欧姆接触层和所述有源层，在所述第二金属层上形成第三铜金属层，同时构图所述第二金属层和所述第三铜金属层以形成双层数据线，双 层状源电极和使用包括过氧化氢（H 2 O 2），H 2 O 2稳定剂和中性盐的蚀刻剂的双层漏电极，并形成与d接触的像素电极 可分层漏电极。