公开(公告)号：US5657152A

公开(公告)日：1997-08-12

申请号：US616528

申请日：1996-03-19

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： G02F1/11 ,  G02F1/125 ,  G02F1/313 ,  G02F1/335 ,  G02F1/33 ,  G02F1/035

CPC分类号： G02F1/335 ,  G02F1/125

摘要： An acoustooptic device includes a Y-cut and Z-propagation LiNbO.sub.3 substrate or 128.degree.-rotating Y-plane LiNbO.sub.3 substrate, an optical waveguide layer which is formed on at least a part of the LiNbO.sub.3 substrate and has a higher light refractive index than the LiNbO.sub.3 substrate, an interdigital electrode which is formed on the LiNbO.sub.3 substrate and generates Rayleigh waves, and a dielectric thin film layer formed on the interdigital electrode.

摘要翻译： 声光装置包括Y切割和Z传播的LiNbO 3衬底或128°旋转的Y平面LiNbO 3衬底，光波导层形成在LiNbO 3衬底的至少一部分上并且具有比 LiNbO 3基板，形成在LiNbO 3基板上并产生瑞利波的交指电极，以及形成在叉指电极上的电介质薄膜层。

公开(公告)号：US08310321B2

公开(公告)日：2012-11-13

申请号：US13096019

申请日：2011-04-28

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H9/64

CPC分类号： H03H9/6403 ,  H03H9/02559 ,  H03H9/542

摘要： A tunable filter includes a circuit configuration in which variable capacitors are connected with surface acoustic wave resonators. The surface acoustic wave resonators each include a piezoelectric substrate made of LiTaO3 or LiNbO3, an IDT electrode made of an electrode material filled in a recess in an upper surface of the piezoelectric substrate, and a SiO2 film arranged to cover the piezoelectric substrate.

摘要翻译： 可调谐滤波器包括其中可变电容器与表面声波谐振器连接的电路配置。 表面声波谐振器各自包括由LiTaO 3或LiNbO 3制成的压电基板，由填充在压电基板的上表面中的凹部中的电极材料制成的IDT电极和布置成覆盖压电基板的SiO 2膜。

公开(公告)号：US07956512B2

公开(公告)日：2011-06-07

申请号：US12825520

申请日：2010-06-29

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/04 ,  H03H9/25

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device includes a LiNbO3 substrate and is constructed such that the reflection coefficient of an IDT is not only high but the electromechanical coupling coefficient K2 is also high, and the range of Euler angles of the LiNbO3 substrate can be increased to realize a wide range of the electromechanical coupling coefficient K2. A plurality of grooves are provided in an upper surface of the LiNbO3 substrate, an IDT including a plurality of electrode fingers is provided by filling a metal material in the plurality of grooves, and the metal material is Pt or W or an alloy primarily including at least one Pt or W.

摘要翻译： 表面声波装置包括LiNbO 3基板，并且被构造为使得IDT的反射系数不仅高，而且机电耦合系数K2也高，并且可以增加LiNbO 3基板的欧拉角的范围，以实现 机电耦合系数K2范围广。 在LiNbO 3基板的上表面设置有多个槽，通过在多个槽中填充金属材料来形成包含多个电极指的IDT，金属材料为Pt或W，或主要包含在 至少一个Pt或W.

公开(公告)号：US07902718B2

公开(公告)日：2011-03-08

申请号：US12862843

申请日：2010-08-25

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/08

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

公开(公告)号：US07888841B2

公开(公告)日：2011-02-15

申请号：US12420944

申请日：2009-04-09

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/08

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

摘要翻译： 声界面波装置包括具有设置在其上表面的多个槽的LiNbO 3基板，由填充在槽中的金属材料限定并且包括IDT电极的电极层，以及介电层，例如SiO 2层 设置在压电基板的上表面和电极上。 电介质层的上表面是平坦的或基本平坦的。 电极的厚度， 的欧拉角（0°，...，-45°至+ 45°），介电层的厚度在表1所示的范围内。

公开(公告)号：US07876021B2

公开(公告)日：2011-01-25

申请号：US12629924

申请日：2009-12-03

申请人： Michio Kadota ,  Takeshi Nakao

发明人： Michio Kadota ,  Takeshi Nakao

IPC分类号： H01L41/04

CPC分类号： H03H9/02834 ,  H03H9/02559 ,  H03H9/02653

摘要： A surface acoustic wave device includes a LiTaO3 substrate, and an IDT having a high reflection coefficient, which has a relatively high electromechanical coupling coefficient k2, and which can obtain superior resonance characteristics and/or filter characteristics. In a surface acoustic wave device in which a plurality of grooves is provided in an upper surface of a LiTaO3 substrate and an IDT having a plurality of electrode fingers made of a metal filled in the plurality of grooves, the following equation is satisfied:(ρ3×C44)1/2>1.95×1011, where ρ represents the density of the metal defining the IDT, and C44 represents the stiffness thereof.

摘要翻译： 表面声波装置包括LiTaO 3衬底和具有高反射系数的IDT，其具有相对较高的机电耦合系数k2，并且其可以获得优异的谐振特性和/或滤波器特性。 在其中在LiTaO 3基板的上表面设置有多个槽的ID声表面波装置和具有由填充在多个槽中的金属制成的多个电极指的IDT，满足以下等式：（＆rgr ; 3×C44）1/2> 1.95×1011，其中＆rgr; 表示限定IDT的金属的密度，C44表示其刚度。

公开(公告)号：US07804221B2

公开(公告)日：2010-09-28

申请号：US12332394

申请日：2008-12-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/02834 ,  H03H9/14538

摘要： A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 D: duty C: thickness of the IDT electrode normalized using a wavelength λ.

摘要翻译： 表面声波器件具有高功率耐受性能，并且能够有效地抑制不期望的杂散响应。 表面声波装置包括具有欧拉角（0°±5°，±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并具有主要由 Cu，第一氧化硅膜，其设置在除了电极设置的区域以外的区域中，其厚度等于电极的厚度;以及第二氧化硅膜，其被设置为覆盖电极和 所述第一氧化硅膜，其中所述表面声波器件利用SH波，其中所述IDT电极的占空比D小于或等于约0.49， 的欧拉角（0°±5°，θ= 5°，0°±10°）被设定在满足以下不等式的范围内：-10×D + 92.5-100×C＆nlE;＆Thetas;＆nlE ; 37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7×C + 45.729 D：占空比C：使用波长λ归一化的IDT电极的厚度。

公开(公告)号：US07656070B2

公开(公告)日：2010-02-02

申请号：US11843527

申请日：2007-08-22

申请人： Michio Kadota ,  Koji Fujimoto

发明人： Michio Kadota ,  Koji Fujimoto

IPC分类号： H03H9/145

CPC分类号： G01N29/022 ,  G01N29/2462 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423

摘要： A surface wave sensor apparatus has a structure such that, on a first principal surface of a base substrate having first through-hole conductors, surface acoustic wave devices are bonded via thermo-compression anisotropic conductive sheets, on first principal surfaces of piezoelectric substrates of the surface acoustic wave devices, electrodes, such as IDTs, are provided, respectively. These electrodes extend toward second principal surfaces via second through-hole conductors and are provided in the piezoelectric substrates. The first through-hole conductors overlap with the second through-hole conductors with the thermo-compression anisotropic conductive sheets being disposed therebetween, respectively.

摘要翻译： 表面波传感器装置具有如下结构：在具有第一通孔导体的基底基板的第一主表面上，通过热压缩各向异性导电片将表面声波装置接合在第一通孔导体的压电基板的第一主表面上 分别提供表面声波装置，诸如IDT的电极。 这些电极经由第二通孔导体朝向第二主表面延伸，并设置在压电基板中。 第一通孔导体与第二通孔导体重叠，热压各向异性导电片分别设置在它们之间。

公开(公告)号：US20090189483A1

公开(公告)日：2009-07-30

申请号：US12420944

申请日：2009-04-09

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/047

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

摘要翻译： 声界面波装置包括具有设置在其上表面的多个槽的LiNbO 3基板，由填充在槽中的金属材料限定并且包括IDT电极的电极层，以及介电层，例如SiO 2层 设置在压电基板的上表面和电极上。 电介质层的上表面是平坦的或基本平坦的。 电极的厚度，LiNbO 3衬底的欧拉角（0°，θ，-45°至+ 45°）以及介电层的厚度在表1所示的范围内。

公开(公告)号：US20090072659A1

公开(公告)日：2009-03-19

申请号：US12326235

申请日：2008-12-02

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/25 ,  H03H9/72 ,  H01L41/04

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729  Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729  Inequality (1B) where D is a duty, and C is a thickness of the IDT.

摘要翻译： 表面声波器件的占空比大于约0.5，通带外的衰减增加，并且有效地抑制了不期望的寄生响应。 表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并且包括主要由Cu制成的IDT电极的电极 设置在与电极配置的区域以外的区域中的第一氧化硅膜，其厚度基本上等于电极的厚度;以及第二氧化硅膜，其被设置成覆盖 电极和第一氧化硅膜，其中表面声波装置利用SH波，其中IDT电极3的占空比D至少为约0.52，欧拉角（0°±5°，θ+ 5°） ，0°±10°）设定为满足以下不等式（1A）或（1B）的范围：<？在线公式描述=“在线公式”end =“lead”？ >（1）当0.52 <= D <= 0.6时，-10×D + 92.5-100×C <=θ<= 37.5×D 2 -57.75×D + 104.075 + 57×10×C 2 -1〜105.7×C + 45.729不等式（1A） n =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（2）当D> 0.6时，86.5-100xC <= θ<= 37.5×D2-57.75xD + 104.075 + 5710×C2-1.77.7λC+ 45.729不等式（1B）<？在线公式描述=“在线公式”end =“tail”？>其中D是任务， C是IDT的厚度。