Wafer evaluation method
    61.
    发明授权

    公开(公告)号:US11769697B2

    公开(公告)日:2023-09-26

    申请号:US17436683

    申请日:2020-01-23

    IPC分类号: H01L21/66 H01L21/22

    CPC分类号: H01L22/12 H01L21/2205

    摘要: An embodiment provides an epitaxial water evaluation method comprising the steps of: cutting a wafer into a first specimen and a second specimen; growing and thermally treating epitaxial layers of the first and second specimens under different conditions; and measuring the diffusion distance of a dopant in each of the epitaxial layers of the first and second specimens.

    DEVICE FOR EVALUATING EDGE DEFECTS IN A SILICON WAFER AND METHOD THEROF

    公开(公告)号:US20230289949A1

    公开(公告)日:2023-09-14

    申请号:US18172940

    申请日:2023-02-22

    发明人: Jung Won SHIN

    IPC分类号: G06T7/00 G06V10/74 G06V10/82

    摘要: A device for evaluating edge defects in a silicon wafer comprises an image acquiring unit configured to acquire image data of an edge region of the silicon wafer, a data preprocessing unit configured to measure an edge region of the silicon wafer using a measurement equipment when an edge defect is detected in the acquired image data to determine a defect attribute of the detected edge defect, and a processor.
    The processor controls to learn the acquired image data to output a defect attribute corresponding to the detected edge defect, and verifies an accuracy of the output defect attribute of the edge defect based on the determined defect attribute of the edge defect.

    WAX COATING APPARATUS FOR WAFER MOUNTING AND WAFER MOUNTING APPARATUS INCLUDING SAME

    公开(公告)号:US20230253220A1

    公开(公告)日:2023-08-10

    申请号:US18106931

    申请日:2023-02-07

    发明人: Kwang Nyeong JANG

    IPC分类号: H01L21/67 H01L21/683

    摘要: A wax coating apparatus for wafer mounting of the embodiment includes: a vacuum chuck in which a vacuum flow path providing vacuum pressure is embedded; a heating plate mounted on an upper side of the vacuum chuck and having holes and grooves connected to the vacuum flow path of the vacuum chuck in order to suck a block to which a wafer is adhered; a rotating shaft connected to a lower side of the vacuum chuck; a driving motor for rotating the rotating shaft; and a wax nozzle provided to be spaced apart from the upper side of the vacuum chuck, wherein the heating plate may be operated so as to heat the block while the wax nozzle sprays wax on the block.

    POLISHING PAD FOR WAFER POLISHING DEVICE, AND APPARATUS AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20230040654A1

    公开(公告)日:2023-02-09

    申请号:US17783059

    申请日:2020-05-08

    IPC分类号: B24D11/00 B24B37/24

    摘要: The present invention provides a method for manufacturing a polishing pad, the method comprising: a step for manufacturing a non-woven pad; a polyurethane impregnation step for impregnating the non-woven pad with polyurethane; and a surface polishing step for polishing the surface of the non-woven pad impregnated with polyurethane, wherein the polyurethane impregnation step and the surface polishing step are performed such that the density ratio between the surface layer and the inside of the polishing pad is uniform.

    WAFER POLISHING HEAD, METHOD FOR MANUFACTURING WAFER POLISHING HEAD, AND WAFER POLISHING APPARATUS COMPRISING SAME

    公开(公告)号:US20220379429A1

    公开(公告)日:2022-12-01

    申请号:US17765899

    申请日:2019-10-23

    发明人: Jae Chel SUNG

    IPC分类号: B24B37/20

    摘要: The present invention provides a method for manufacturing a wafer polishing head, the method comprising the steps of: coupling a guide ring consisting of a plurality of layers to the edge of a base substrate; rounding the edge of the guide ring; forming a first coating layer on the rounded surface of the guide ring through coating; fixing a rubber chuck to the base substrate; and forming a second coating layer on the outer circumferential surfaces of an adhesive and an adhesive material through coating, from the rubber chuck to the first coating layer.

    METHOD FOR GROWING EPITAXIAL LAYER ON WAFER

    公开(公告)号:US20220316090A1

    公开(公告)日:2022-10-06

    申请号:US17693517

    申请日:2022-03-14

    IPC分类号: C30B25/10 H01L21/02

    摘要: Embodiments provide a method of growing an epitaxial layer on a wafer, the method including steps of (a) introducing at least one wafer into a process chamber, (b) loading the wafer into an area adjacent to a susceptor while supporting the wafer using a lift pin, (c) preheating the wafer, and (d) placing the wafer in a pocket of the susceptor and heating the wafer to deposit an epitaxial layer on the wafer, wherein outputs of first lamps above the susceptor and second lamps under the susceptor in the steps (a) and (b) are set to be different from outputs of the first lamps and the second lamps in the steps (c) and (d).

    METHOD AND APPARATUS OF EVALUATING QUALITY OF WAFER OR SINGLE CRYSTAL INGOT

    公开(公告)号:US20220237771A1

    公开(公告)日:2022-07-28

    申请号:US17647388

    申请日:2022-01-07

    发明人: Hyun Woo PARK

    摘要: A method of evaluating quality of a wafer or an apparatus of evaluating quality of a wafer may include: performing a copper-haze evaluation on a piece of wafer or a single crystal ingot; collecting copper-haze map data and a copper-haze evaluation score based on a result of the copper-haze evaluation; training an artificial intelligence model based on the copper-haze map data and the copper-haze evaluation score; and performing crystal defect evaluation on the piece of the wafer or the single crystal ingot using the learned artificial intelligence model that outputs the copper-haze evaluation score when the copper-haze map data is input.

    Wafer carrier thickness measuring device

    公开(公告)号:US11371829B2

    公开(公告)日:2022-06-28

    申请号:US15780605

    申请日:2017-06-05

    发明人: Suk Jin Jung

    摘要: The present invention relates to a wafer carrier thickness measuring device capable of accurately measuring an inner/outer circumferential thickness of a wafer carrier in a non-contact manner. The present invention provides a wafer carrier thickness measuring device including: a first table installed to be capable of rotating and moving vertically and capable of supporting a central portion of a wafer carrier; a second table disposed outside the first table and rotatably installed, and capable of supporting an outer circumferential portion of the wafer carrier; upper and lower sensors for calculating a thickness of the wafer carrier by measuring a distance to upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; and a sensor driving unit located at one side of the second table and moving the upper and lower sensors to an upper side or a lower side of the wafer carrier supported by one of the first and second tables.