公开(公告)号：US20050147148A1

公开(公告)日：2005-07-07

申请号：US11070741

申请日：2005-03-01

Applicant: Jorg Eichholz

Inventor： Jorg Eichholz

IPC: G09G3/22 ,  H05G1/30 ,  H01S3/30 ,  H01S3/09

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J2201/30469 ,  H01J2237/0635 ,  H01J2237/065 ,  H05G1/30

Abstract: A control circuit for controlling an electron-emitting device is formed to draw, with a voltage applied, an excitation current being related to a number of electrons emitted. The inventive control circuit includes a first determinator for determining whether an amount of charge transported by the excitation current has reached a predetermined charge threshold value, a second determinator for determining whether a magnitude of the excitation current has reached a predetermined current threshold value, and a switch for switching off the excitation current as soon as the first determinator determines that the amount of charge has reached a predetermined charge threshold value, or as soon as the second determinator determines that the magnitude of the excitation current is smaller than the predetermined current threshold value. The control circuit allows the usage of, for example, CNT arrays for irradiation and operates on the basis of the current drawn by the electron-emitting device, which makes possible a simple setup.

Abstract translation: 形成用于控制电子发射器件的控制电路，以施加电压来绘制与所发射的电子数量有关的激励电流。 本发明的控制电路包括用于确定由激励电流传输的电荷量是否已经达到预定充电阈值的第一确定器，用于确定励磁电流的大小是否已经达到预定电流阈值的第二确定器，以及 一旦第一确定器确定电荷量已经达到预定的充电阈值，或者一旦第二确定器确定激励电流的大小小于预定的电流阈值，一旦关闭激励电流 。 控制电路允许使用例如CNT阵列进行照射，并且基于由电子发射器件绘制的电流进行操作，这使得可以进行简单的设置。

公开(公告)号：US06630794B2

公开(公告)日：2003-10-07

申请号：US09987273

申请日：2001-11-14

Applicant: Seiichi Sakawa ,  Yoshinori Terui

Inventor： Seiichi Sakawa ,  Yoshinori Terui

IPC: G09G310

CPC classification number: H01J9/42 ,  H01J37/073 ,  H01J2237/06316 ,  H01J2237/065

Abstract: An S/N ratio of a probe current is measured while a filament current is changed, and the filament current in which the S/N ratio is maximal is determined.

Abstract translation: 在灯丝电流改变时测量探头电流的S / N比，并且确定S / N比最大的灯丝电流。

公开(公告)号：US06541785B1

公开(公告)日：2003-04-01

申请号：US09596707

申请日：2000-06-20

Applicant: Mamoru Nakasuji

Inventor： Mamoru Nakasuji

IPC: H01J114

CPC classification number: H01J37/06 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/3175

Abstract: Electron-beam sources are disclosed that are especially suitable for use in electron-beam microlithography apparatus and methods for transferring a fine pattern from a reticle to a substrate (e.g., semiconductor wafer). The source includes a cathode body with a central conical projection extending toward an anode. The cathode body includes an annular electron-emitting surface. The electron-emitting surface can be defined by coating the cathode body with a material having a higher work function (desirably higher by 1 eV or greater) than the material of the cathode body. The operating temperature of the cathode body is controlled so that electrons are emitted only from the electron-emitting surface.

Abstract translation: 公开了特别适用于电子束微光刻设备的电子束源，以及用于将精细图案从掩模版传送到衬底（例如，半导体晶片）的方法。 源包括具有向阳极延伸的中心圆锥形突起的阴极体。 阴极体包括环形电子发射表面。 电子发射表面可以通过用比阴极体的材料具有更高功函（理想地高1eV或更高）的材料涂覆阴极体来限定。 控制阴极体的工作温度，使电子仅从电子发射表面发射。