Multiple output cavities in sheet beam klystron
    66.
    发明授权
    Multiple output cavities in sheet beam klystron 有权
    薄板束速调管中的多输出腔

    公开(公告)号:US08975816B2

    公开(公告)日:2015-03-10

    申请号:US12436049

    申请日:2009-05-05

    CPC classification number: H01J23/38 H01J25/10

    Abstract: A RF generator includes a structure having an input section, an output section, and an opening extending between the input section and the output section, wherein the output section has a first cavity and a second cavity, and wherein the first and second cavities are spaced apart from each other so that they are electromagnetically uncoupled from each other. A method of providing RF energy, includes receiving an electron beam, providing a first RF energy through a first cavity, wherein the first RF energy is generated using the electron beam, and providing a second RF energy through a second cavity, wherein the second RF energy is generated using the electron beam, wherein the first cavity and the second cavity are spaced apart from each other so that they are electromagnetically uncoupled from each other.

    Abstract translation: RF发生器包括具有输入部分,输出部分和在输入部分和输出部分之间延伸的开口的结构,其中输出部分具有第一腔体和第二腔体,并且其中第一和第二腔体间隔开 彼此分开,使得它们彼此电磁脱离。 提供RF能量的方法包括接收电子束,通过第一腔提供第一RF能量,其中使用电子束产生第一RF能量,并通过第二腔提供第二RF能量,其中第二RF 使用电子束产生能量,其中第一腔和第二腔彼此间隔开,使得它们彼此电磁耦合。

    Plasma klystron switch
    67.
    发明授权
    Plasma klystron switch 有权
    等离子速调管开关

    公开(公告)号:US08575844B1

    公开(公告)日:2013-11-05

    申请号:US13212825

    申请日:2011-08-18

    CPC classification number: H01J23/34 H01J25/10

    Abstract: The plasma klystron switching device of the present invention may include a low-dielectric substrate, a plasma cavity internally pressurized by an inert gas, a circuit assembly formed on the first surface of the low-dielectric substrate and enclosed by the plasma cavity, wherein the circuit assembly includes a first electrode and a second electrode configured to form a switching gap, wherein the switching gap is configured to act as a high conductance plasma generation zone during an ON state of the plasma klystron switching device and a low conductance zone during an OFF state of the plasma klystron switching device, an evacuated klystron resonance generator, wherein the klystron resonance generator includes a klystron resonance cavity, wherein the klystron resonance generator includes a coupling aperture configured to RF couple the klystron resonance cavity and the plasma cavity, and a field emitter array configured to energize the klystron resonance generator.

    Abstract translation: 本发明的等离子体速调管切换装置可以包括低电介质基板,由惰性气体内部加压的等离子体腔,形成在低电介质基板的第一表面上并被等离子体空腔包围的电路组件,其中, 电路组件包括第一电极和第二电极,其被配置为形成开关间隙,其中开关间隙被配置为在等离子体速调管开关装置的导通状态期间用作高电导等离子体产生区域,并且在关断期间具有低导电区域 等离子体速调管切换装置的状态,抽空的速调管共振发生器,其中所述速调管共振发生器包括速调管谐振腔,其中所述速调管谐振发生器包括被配置为RF耦合所述速调管谐振腔和等离子体腔的耦合孔,以及场 发射器阵列配置为使速调管谐振发生器通电。

    Electron gun for a multiple beam klystron with magnetic compression of the electron beams
    68.
    发明授权
    Electron gun for a multiple beam klystron with magnetic compression of the electron beams 有权
    用于具有电子束磁压缩的多光束速调管的电子枪

    公开(公告)号:US08547006B1

    公开(公告)日:2013-10-01

    申请号:US12705160

    申请日:2010-02-12

    CPC classification number: H01J23/06 H01J3/027 H01J25/10

    Abstract: A multi-beam electron gun provides a plurality N of cathode assemblies comprising a cathode, anode, and focus electrode, each cathode assembly having a local cathode axis and also a central cathode point defined by the intersection of the local cathode axis with the emitting surface of the cathode. Each cathode is arranged with its central point positioned in a plane orthogonal to a device central axis, with each cathode central point an equal distance from the device axis and with an included angle of 360/N between each cathode central point. The local axis of each cathode has a cathode divergence angle with respect to the central axis which is set such that the diverging magnetic field from a solenoidal coil is less than 5 degrees with respect to the projection of the local cathode axis onto a cathode reference plane formed by the device axis and the central cathode point, and the local axis of each cathode is also set such that the angle formed between the cathode reference plane and the local cathode axis results in minimum spiraling in the path of the electron beams in a homogenous magnetic field region of the solenoidal field generator.

    Abstract translation: 多射束电子枪提供多个N个阴极组件,其包括阴极,阳极和聚焦电极,每个阴极组件具有局部阴极轴线以及由局部阴极轴线与发射表面相交的中心阴极点 的阴极。 每个阴极布置成其中心点位于与器件中心轴正交的平面中,每个阴极中心点与器件轴线相等,并且每个阴极中心点之间的夹角为360 / N。 每个阴极的局部轴线相对于中心轴线具有阴极发散角,其设定为使得来自螺线管线圈的发散磁场相对于阴极参考平面的局部阴极轴线的投影小于5度 由器件轴和中心阴极点形成,并且每个阴极的局部轴也被设置为使得在阴极参考平面和局部阴极轴之间形成的角度导致电子束在均匀的路径中的最小螺旋 磁场发生器的磁场区域。

    Photocapacitively tunable electronic device utilizing electrical resonator with semiconductor junction
    69.
    发明授权
    Photocapacitively tunable electronic device utilizing electrical resonator with semiconductor junction 有权
    利用具有半导体结的电谐振器的光电可调电子器件

    公开(公告)号:US08400225B1

    公开(公告)日:2013-03-19

    申请号:US13136904

    申请日:2011-08-10

    CPC classification number: H01J25/10

    Abstract: An optically tunable cavity for an electronic device concurrently achieves high bandwidth (for example, at least about 10 percent, typically greater than about 50 percent) with high DC-RF efficiency (for example, at least about 50 percent, typically greater than about 85 percent). The electronic device may be a vacuum electronic device, including linear-beam and cross-field devices, with either an input circuit or an output circuit, or both, containing a photocapacitance-controlled resonator embedded such that a laser beam can impinge upon a semiconductor gap of the resonator. The laser beam may instantaneously change the resonant mode of the overall loaded cavity, thus allowing for amplification or oscillation of the desired frequency throughout the vacuum electronic device.

    Abstract translation: 用于电子设备的光学可调谐腔室同时实现具有高DC-RF效率的高带宽(例如,至少约10%,通常大于约50%)(例如,至少约50%,通常大于约85 百分)。 电子设备可以是真空电子设备,包括具有输入电路或输出电路的线性束和交叉场设备,或者两者都包含嵌入光电容控制谐振器,使得激光束可以撞击到半导体 谐振器的间隙。 激光束可以瞬时地改变整个加载腔的谐振模式,从而允许整个真空电子器件中的期望频率的放大或振荡。

    SOLID STATE KLYSTRON
    70.
    发明申请
    SOLID STATE KLYSTRON 有权
    固态KLYSTRON

    公开(公告)号:US20130005105A1

    公开(公告)日:2013-01-03

    申请号:US13603086

    申请日:2012-09-04

    Inventor: Paul M. Solomon

    CPC classification number: H01J25/10 B82Y10/00

    Abstract: A solid state Klystron structure is fabricated by forming a source contact and a drain contact to both ends of a conducting wire and by forming a bias gate and a signal gate on the conducting wire. The conducting wire may be at least one carbon nanotube or at least one semiconductor wire with long ballistic mean free paths. By applying a signal at a frequency that corresponds to an integer multiple of the transit time of the ballistic carriers between adjacent fingers of the signal gate, the carriers are bunched within the conducting wire, thus amplifying the current through the solid state Klystron at a frequency of the signal to the signal gate, thus achieving a power gain.

    Abstract translation: 通过在导线的两端形成源极接触和漏极接触并且在导线上形成偏置栅极和信号栅极来制造固态速调管结构。 导线可以是至少一个碳纳米管或具有长的弹道平均自由路径的至少一个半导体线。 通过以对应于信号栅极的相邻指状物之间的弹道载体的渡越时间的整数倍的频率施加信号,载流子在导线内聚束,从而以一定频率放大通过固态速调管的电流 信号到信号门,从而实现功率增益。

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