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134 条记录 (耗时 0.016 秒)

    ELECTRON TUBE
    1.
    发明申请
    ELECTRON TUBE 有权
    电子管

    公开(公告)号：US20150228439A1

    公开(公告)日：2015-08-13

    申请号：US14425917

    申请日：2013-07-31

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Yasumasa Hamana ,  Takaaki Nagata ,  Kimitsugu Nakamura

    IPC分类号： H01J29/86 ,  H01J40/18

    CPC分类号： H01J29/86 ,  C23C16/45525 ,  H01J5/08 ,  H01J5/10 ,  H01J29/88 ,  H01J31/50 ,  H01J40/18

    摘要： In an electron tube, an atomic layer deposition method is used to form an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers or a mixed structure of an electrically insulating material and an electrically conductive material, so as to cover the whole of an inner wall surface and an outer wall surface of a second envelope. By use of the atomic layer deposition method, the firm and fine electrical resistance film with a desired resistance can be formed on an insulation surface, without containing a material such as a binder. When the electrical resistance film is provided with slight electrical conductivity, it can suppress occurrence of withstand voltage failure due to electrification of the insulation surface or the like and realize stability of withstand voltage characteristics.

    摘要翻译： 在电子管中，使用原子层沉积法形成具有电绝缘层和导电层的叠层结构或电绝缘材料和导电材料的混合结构的电阻膜，以覆盖 整个内壁表面和第二外壳的外壁表面。 通过使用原子层沉积方法，可以在绝缘表面上形成具有所需电阻的坚固和精细的电阻膜，而不含粘合剂等材料。 当电阻膜具有轻微的导电性时，可以抑制由于绝缘表面等引起的耐电压故障的发生，并且实现耐电压特性的稳定性。

    Near infrared ray shielding film
    4.
    发明授权
    Near infrared ray shielding film 失效
    近红外线屏蔽膜

    公开(公告)号：US06991849B2

    公开(公告)日：2006-01-31

    申请号：US10362229

    申请日：2002-06-18

    申请人： Taro Oya

    发明人： Taro Oya

    IPC分类号： B32B7/12 ,  B32B27/06 ,  H04N5/65

    CPC分类号： G02B1/10 ,  C08J5/18 ,  C08J2367/02 ,  G02B1/115 ,  G02B5/208 ,  G02B5/22 ,  H01J5/08 ,  H01J11/44 ,  H01J2211/448 ,  Y10T428/24835 ,  Y10T428/249953 ,  Y10T428/28 ,  Y10T428/2843 ,  Y10T428/2848 ,  Y10T428/31794 ,  Y10T428/31797

    摘要： A near infrared screening film which consists of a biaxially oriented film made from a polyester containing a near infrared light absorber having a weight reduction start temperature of at least 280° C. and which has a haze value of 5% or less and a total transmittance for visible lights having a wavelength of 400 to 650 nm of 40% or more and which is exemplified by having optical properties at visible and near infrared ranges which satisfy the following expressions (1) to (4): 1

    摘要翻译： 一种近红外屏蔽膜，其由包含重量减轻开始温度为至少280℃并且雾度值为5％以下且近似红外光吸收剂的聚酯制成的双轴取向膜组成， 对于波长为400〜650nm的可见光为40％以上的可见光，例示为在满足下述式（1）〜（4）的可见光和近红外范围的光学性质：<？ description =“In-line Formulas”end =“lead”？> 1 in-line-formula description =“In-line Formulas”end =“lead”？> 1 - 10 <？in-line-formula description =“In-line formula”end =“lead”？> - 10

    SUPPRESION OF VOLTAGE BREAKDOWN AND FIELD EMISSION FROM SURFACES
    6.
    发明申请
    SUPPRESION OF VOLTAGE BREAKDOWN AND FIELD EMISSION FROM SURFACES 无效

    公开(公告)号：US20010051209A1

    公开(公告)日：2001-12-13

    申请号：US08730475

    申请日：1996-10-11

    发明人： RICHARD SILBERGLITT ,  WILLIAM PETER

    IPC分类号： B05D005/12 ,  B05D001/36

    CPC分类号： C23C28/044 ,  C23C14/0641 ,  C23C14/0647 ,  C23C14/0652 ,  H01J5/08

    摘要： This invention consists of a coating applied to the metal surface which reduces the field emission levels of the surface. This coating could also decrease the secondary electron coefficient of the surface. The preferred embodiment described below is a hybrid coating consisting of two layers. However, a single-layer coating may also be used so long as it decreases field emission. Likewise, any number of coating layers may be used, so long as the resultant coating reduces field emission. The coating may also alter the properties of the interface between the metal surface and any macroparticle debris, in order to reduce field emission levels, but this is not essential, so long as the field emission from the surface is reduced. The invention is a coating which is not harmful to dc and rf vacuum system components, as for example, coatings which contain halogen atoms, such as CaF nullJ. N. Smith, Jr., J. Appl. Phys. 59, 283 (1986)null. This invention provides a means of raising breakdown thresholds in rf cavities even in non-multipactor parameter regimes. The coating can reduce emission from the electrodes by isolating the electrode surface whiskers from the cavity vacuum (FIG. 1). It can also absorb low-energy secondary or field-emitted electrons. We have obtained voltage holdoff data and dark current measurements for a variety of coatings, two of which far exceed the properties of the current state-of-the-art Titanium Nitride (TiN) coatings. For example, DC electrical breakdown is increased from a value of 40 MV/m for bare Copper to 115 MV/m for a copper electrode coated as described in the preferred embodiment. TiN-coated electrodes undergo DC breakdown at a much lower value of 50 MV/m. Dark current levels from the coating described in the preferred embodiment are over six orders of magnitude less than TiN-coated Copper even after arcing. These coatings have been demonstrated to have the properties required for use in high-voltage holdoff applications. For example, they can decrease the secondary emission yield, are mechanically stable, are not sensitive to radiation, are bakeable (important since most vacuum electronic systems are baked before use to eliminate contaminants), do not affect the cavity Q (the ability of the cavity to store energy), and will not poison a cathode. The present invention pertains to a method of suppressing electrical breakdown on a surface of an object to reduce field emission. The method comprises the steps of applying a first coating layer coating to the surface; and applying at least one subsequent coating layer which does not cause cathode contamination to the surface over the first coating layer. The present invention pertains to a device comprising a component having a surface, a first layer in contact and covering the surface which has a dark current emission less than that of bare copper and a voltage breakdown threshold higher than 40 MV/m DC.

    Lamp and method for manufacturing the same
    7.
    发明申请
    Lamp and method for manufacturing the same 有权
    灯及其制造方法

    公开(公告)号：US20010000121A1

    公开(公告)日：2001-04-05

    申请号：US09726844

    申请日：2000-11-30

    申请人： Matsushita Electronics Corporation

    发明人： Kazuhisa Tanaka ,  Takeshi Saitoh ,  Masaru Ikeda ,  Tomoyuki Seki

    IPC分类号： H01J061/40

    CPC分类号： C03C17/005 ,  C03C17/04 ,  H01J5/08 ,  H01J61/025 ,  H01J61/04 ,  H01J61/35

    摘要： A greensheet comprising an inorganic pigment and an inorganic matrix component is applied to a surface of a glass substrate and fired for fixing. The formed shading film has a portion whose thickness is 90% or more of the maximum thickness of the shading film within the range of 0.5 mm from an edge of the shading film. Thus, a shading film that has distinct end faces and has an excellent thickness uniformity can be formed with a good positional accuracy. Therefore, a lamp having a highly precise light distribution property can be obtained. In addition, a lamp having such a property can be obtained with a few steps and at a low cost.

    摘要翻译： 将包含无机颜料和无机基质成分的毛坯涂布在玻璃基板的表面上并点火固定。 所形成的遮光膜的厚度为遮光膜的最大厚度的90％以上，与遮光膜的边缘成0.5mm以内的部分。 因此，可以以良好的位置精度形成具有不同端面且具有优异的厚度均匀性的遮光膜。 因此，可以获得具有高精度配光性能的灯。 此外，可以以几个步骤并且以低成本获得具有这种性质的灯。