Image Sensor and Method of Manufacturing the Same
    71.
    发明申请
    Image Sensor and Method of Manufacturing the Same 审中-公开
    图像传感器及其制造方法

    公开(公告)号:US20080224138A1

    公开(公告)日:2008-09-18

    申请号:US11842831

    申请日:2007-08-21

    申请人: MIN HYUNG LEE

    发明人: MIN HYUNG LEE

    IPC分类号: H01L31/0376 H01L31/18

    摘要: Disclosed is an image sensor, which includes a substrate having a transistor circuit and lower interconnections. First interconnections are formed separated from each other on the substrate and electrically connected to the CMOS circuitry through the lower interconnections. Planarized insulating layers are formed between the first interconnections to isolate unit pixels. An intrinsic layer is formed on the substrate including the insulating layers, and a second conductive layer is formed on the intrinsic layer. The first interconnections, the intrinsic layer and the second conductive layer provide a photodiode structure for the image sensor.

    摘要翻译: 公开了一种图像传感器,其包括具有晶体管电路和下部互连的基板。 在衬底上形成彼此分离的第一互连,并通过下部互连电连接到CMOS电路。 平面化绝缘层形成在第一互连之间以隔离单位像素。 在包括绝缘层的基板上形成本征层,在本征层上形成第二导电层。 第一互连,本征层和第二导电层为图像传感器提供光电二极管结构。