Abstract:
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
Abstract:
A disc balancing device and a method thereof. The disc balancing device includes a disc assembly having a driving source, and a disc rotatably disposed at the driving source, a displacement measurement unit measuring vibration in the rotation of the disc assembly, a phase angle measurement unit measuring a phase angle from a reference point of the disc assembly in the rotation of the disc assembly, an operation/control unit calculating an eccentric mass and an eccentric position of the disc assembly, by using the biased vibration measured in the displacement measurement unit and the phase angle measured in the phase angle measurement unit, and a laser cutter tracking and laser-cutting the side portion of the disc corresponding to the eccentric position according to the information from the operation/control unit, whereby the eccentric mass of the disc assembly is balanced to reduce vibration in the rotation.
Abstract:
A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.