公开(公告)号：US20110068405A1

公开(公告)日：2011-03-24

申请号：US12766233

申请日：2010-04-23

Applicant: Feng YUAN ,  Hung-Ming CHEN ,  Tsung-Lin LEE ,  Chang-Yun CHANG ,  Clement Hsingjen WANN

Inventor： Feng YUAN ,  Hung-Ming CHEN ,  Tsung-Lin LEE ,  Chang-Yun CHANG ,  Clement Hsingjen WANN

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/308 ,  H01L29/7851 ,  H01L29/7853

Abstract: An exemplary structure for the fin field effect transistor comprises a substrate comprising a major surface; a plurality of fin structures protruding from the major surface of the substrate, wherein each fin structure comprises an upper portion and a lower portion separated at a transition location at where the sidewall of the fin structure is at an angle of 85 degrees to the major surface of the substrate, wherein the upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate and a top surface having a first width, wherein the lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width; and a plurality of isolation structures between the fin structures, wherein each isolation structure extends from the major surface of the substrate to a point above the transition location.

Abstract translation: 鳍状场效应晶体管的示例性结构包括：包括主表面的衬底; 多个翅片结构，从所述基底的主表面突出，其中每个翅片结构包括在翅片结构的侧壁与主表面成85度角的过渡位置处分离的上部和下部 ，其中所述上部具有基本上垂直于所述基底的主表面的侧壁和具有第一宽度的顶表面，其中所述下部具有在所述上部的相对侧上的锥形侧壁和具有第二宽度的基部 宽度大于第一宽度; 以及在翅片结构之间的多个隔离结构，其中每个隔离结构从基板的主表面延伸到过渡位置上方的点。

公开(公告)号：US07847335B2

公开(公告)日：2010-12-07

申请号：US11402529

申请日：2006-04-11

Applicant: Tzyh-Cheang Lee ,  Tsung-Lin Lee ,  Jiunn-Ren Hwang

Inventor： Tzyh-Cheang Lee ,  Tsung-Lin Lee ,  Jiunn-Ren Hwang

IPC: H01L29/788

CPC classification number: H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7923

Abstract: A non-volatile semiconductor memory device includes a gate stack formed on a substrate, semiconductor spacers, an oxide-nitride-oxide stack, and a contact pad. The semiconductor spacers are adjacent to sides of the gate stack and over the substrate. The oxide-nitride-oxide stack is located between the spacers and the gate stack, and located between the spacers and the substrate, such that the oxide-nitride-oxide stack has a generally L-shaped cross-section on at least one side of the gate stack. The contact pad is over and in electrical contact with the gate electrode and the semiconductor spacers. The contact pad may be further formed into recessed portions of the oxide-nitride-oxide stack between the gate electrode and the semiconductor spacers. The contact pad may include an epitaxial silicon having a metal silicide formed thereon.

Abstract translation: 非易失性半导体存储器件包括形成在衬底，半导体间隔物，氧化物 - 氮化物 - 氧化物堆叠和接触焊盘上的栅堆叠。 半导体间隔物邻近栅极堆叠的两侧并在衬底上方。 氧化物 - 氧化物 - 氧化物堆叠位于间隔物和栅极堆叠之间，并且位于间隔物和衬底之间，使得氧化物 - 氧化物 - 氧化物堆叠在至少一侧上具有大致L形的横截面 门堆叠。 接触垫在栅极电极和半导体间隔物之间​​是电接触的。 接触焊盘可以进一步形成在栅电极和半导体间隔物之间​​的氧化物 - 氮化物 - 氧化物堆叠的凹陷部分。 接触焊盘可以包括其上形成有金属硅化物的外延硅。

公开(公告)号：US20070161195A1

公开(公告)日：2007-07-12

申请号：US11327185

申请日：2006-01-06

Applicant: Tzyh-Cheang Lee ,  Fu-Liang Yang ,  Jiunn-Ren Hwang ,  Tsung-Lin Lee

Inventor： Tzyh-Cheang Lee ,  Fu-Liang Yang ,  Jiunn-Ren Hwang ,  Tsung-Lin Lee

IPC: H01L21/336

CPC classification number: H01L21/28282 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7923 ,  Y10S438/954

Abstract: A system and method for a sidewall SONOS memory device is provided. An electronic device includes a non-volatile memory. A substrate includes source/drain regions. A gate stack is directly over the substrate and between the source/drain regions. The gate stack has a sidewall. A nitride spacer is formed adjacent to the gate stack. A first oxide material is formed directly adjacent the spacer. An oxide-nitride-oxide structure is formed between the spacer and the gate stack. The oxide-nitride-oxide structure has a generally L-shaped cross-section on at least one side of the gate stack. The oxide-nitride-oxide structure includes a vertical portion and a horizontal portion. The vertical portion is substantially aligned with the sidewall and located between the first oxide material and the gate sidewall. The horizontal portion is substantially aligned with the substrate and located between the first oxide and the substrate.

Abstract translation: 提供了一种用于侧壁SONOS存储器件的系统和方法。 电子设备包括非易失性存储器。 衬底包括源极/漏极区域。 栅极堆叠直接在衬底上并且在源极/漏极区域之间。 栅极堆叠具有侧壁。 在栅叠层附近形成氮化物间隔物。 第一氧化物材料直接邻近间隔物形成。 在间隔物和栅极叠层之间形成氧化物 - 氧化物 - 氧化物结构。 氧化物 - 氧化物 - 氧化物结构在栅极堆叠的至少一侧具有大致L形的横截面。 氧化物 - 氮化物 - 氧化物结构包括垂直部分和水平部分。 垂直部分基本上与侧壁对准并且位于第一氧化物材料和栅极侧壁之间。 水平部分基本上与衬底对准并位于第一氧化物和衬底之间。

公开(公告)号：US20050002472A1

公开(公告)日：2005-01-06

申请号：US10609496

申请日：2003-07-01

Applicant: Tsung-Lin Lee ,  Rong-Liang Chiou

Inventor： Tsung-Lin Lee ,  Rong-Liang Chiou

IPC: H04L25/06 ,  H04L27/26 ,  H04L27/38 ,  H04L27/06

CPC classification number: H04L25/067 ,  H04L1/0054 ,  H04L1/0071 ,  H04L5/0007 ,  H04L5/006 ,  H04L5/0091 ,  H04L27/38

Abstract: A metric generation scheme for use in OFDM receivers. In a preferred embodiment, an OFDM receiver of the invention includes a dynamic quantizer to compress a series of channel-state information values. Also, a bit de-interleaver is provided to de-interleave a series of symbol-based data inverse to interleaving operations at a transmitter end. The de-interleaved symbol-based data is further compressed by another dynamic quantizer to yield a complex signal according to a constellation scheme. Then a metric generator calculates a bit metric of a zero group and a bit metric of a one group for each received bit in which the constellation is divided into the one group and the zero group for each bit location.

Abstract translation: 用于OFDM接收机的度量生成方案。 在优选实施例中，本发明的OFDM接收机包括用于压缩一系列信道状态信息值的动态量化器。 此外，提供了一个解交织器，用于将一系列基于符号的数据逆交换到发送器端处的交织操作。 解交织的基于符号的数据被另一个动态量化器进一步压缩，以产生根据星座图方案的复信号。 然后，度量发生器为每个接收的比特计算零组的比特量度和一组的比特度量，其中星座被划分成一个组，并且对于每个比特位置分配零组。