公开(公告)号：US20150099066A1

公开(公告)日：2015-04-09

申请号：US14568145

申请日：2014-12-12

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

Abstract translation: 本发明一般涉及在衬底上控制生长材料的方法和装置。 根据本发明的实施方案，控制前体进料以提供最佳脉冲谱。 这可以通过将馈送分成两条路径来实现。 其中一条路径以连续的方式受到限制。 另一条路径被定期地限制。 两个路径的输出在反应器进入之前的某一点收敛。 因此，单个前体源能够在两种不同的条件下将前体进料到反应器中，其可以被看作模拟ALD条件，也可以被看作模拟CVD条件。 这允许否则单模电抗器以包括一个或多个ALD / CVD组合模式的多种模式操作。 另外，可以修改每个脉冲的脉冲分布。 可以修改脉冲轮廓以在脉冲开始时产生低或非常低的分压脉冲轮廓。