Quantum dot light emitting diode (QLED) and manufacture method thereof, display panel

    公开(公告)号:US10886485B2

    公开(公告)日:2021-01-05

    申请号:US16144308

    申请日:2018-09-27

    Inventor: Dong Li

    Abstract: A quantum dot light emitting diode (QLED) and a manufacture method thereof, a display panel are provided. The QLED includes a hole transport layer and a quantum dot light emitting layer, the hole transport layer includes a porous structure layer having pores, the quantum dot light emitting layer is disposed on the hole transport layer; the quantum dot light emitting layer contacts the porous structure layer, and a material of the quantum dot light emitting layer is disposed in at least a part of the pores.

    Quantum dot light emitting device, method of manufacturing the same, and quantum dot light emitting display device

    公开(公告)号:US10658606B2

    公开(公告)日:2020-05-19

    申请号:US16168239

    申请日:2018-10-23

    Abstract: A quantum dot light emitting device is disclosed. The quantum dot light emitting device includes a first electrode and a second electrode. The quantum dot light emitting device includes a quantum dot light emitting layer interposed between the first electrode and the second electrode. The quantum dot light emitting device includes a first hole transport layer located between the quantum dot light emitting layer and the first electrode. The quantum dot light emitting device includes a hole injection layer located between the first hole transport layer and the first electrode. The quantum dot light emitting device includes an electron transport layer located between the quantum dot light emitting layer and the second electrode. The quantum dot light emitting device includes a filling layer located between the electron transport layer and the quantum dot light emitting layer and embedded in the quantum dot light emitting layer.

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