公开(公告)号：US20070225275A1

公开(公告)日：2007-09-27

申请号：US11726756

申请日：2007-03-21

申请人： Brett Allison ,  Bryan Branstetter ,  James Breitenbucher ,  Michael Hack ,  Natalie Hawryluk ,  Alec Lebsack ,  Kelly McClure ,  Jeffrey Merit

发明人： Brett Allison ,  Bryan Branstetter ,  James Breitenbucher ,  Michael Hack ,  Natalie Hawryluk ,  Alec Lebsack ,  Kelly McClure ,  Jeffrey Merit

IPC分类号： A61K31/55 ,  C07D487/02

CPC分类号： C07D487/04

摘要： Certain tetrahydro-pyrimidoazepine compounds are described, which are useful as TRPV1 modulators. Such compounds may be used in pharmaceutical compositions and methods for the treatment of disease states, disorders, and conditions mediated by TRPV1. Thus, the compounds may be-administered to treat, e.g., pain, itch, cough, asthma, or inflammatory bowel disease.

摘要翻译： 描述了某些四氢嘧啶并氮杂化合物，其可用作TRPV1调节剂。 这样的化合物可以用于治疗由TRPV1介导的疾病状态，病症和状况的药物组合物和方法。 因此，可以给予化合物以治疗例如疼痛，瘙痒，咳嗽，哮喘或炎症性肠病。

公开(公告)号：US5081513A

公开(公告)日：1992-01-14

申请号：US662682

申请日：1991-02-28

申请人： Warren B. Jackson ,  Michael Hack

发明人： Warren B. Jackson ,  Michael Hack

IPC分类号： H01L21/322 ,  H01L29/32 ,  H01L29/84

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L29/84

摘要： An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.

摘要翻译： 一种包括其中具有多个亚稳态缺陷的基本上本征的非单晶半导体活性层的电子器件，所述有源层响应于通过将其费米能级从其移动间隙内的平衡状态移位而对器件施加应力，并且 在与费米能级的偏移相对的移动性间隙中产生剩余数量的亚稳态缺陷的自发产生，以及包含位于活性层附近的掺杂非单晶半导体层的恢复层，并且响应于应用 通过改变其中的活性掺杂剂原子的数量来施加器件，从而改变恢复层中的电荷，从而允许过量电荷溢出到有源层，以加速有源层的返回到其平衡状态。

公开(公告)号：US4996573A

公开(公告)日：1991-02-26

申请号：US428814

申请日：1989-10-27

申请人： Michael Hack ,  John G. Shaw ,  Michael Shur

发明人： Michael Hack ,  John G. Shaw ,  Michael Shur

IPC分类号： H01L31/10 ,  H01L27/144 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1443

摘要： A thin film transistor and optical sensor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, a source electrode comprising finger elements, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, a drain electrode layer contiguous with the semiconductor layer, barrier elements for inhibiting a drain field from reaching the source electrode, and a transparent, electrically conductive drain contact member contiguous with said drain electrode layer, through which optical energy may pass to the semiconductor layer.