公开(公告)号：US07215368B2

公开(公告)日：2007-05-08

申请号：US10406950

申请日：2003-04-03

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14647 ,  H01L27/14609

摘要： In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read out a photoelectric conversion signal of each diode to a floating diffusion.

摘要翻译： 在具有多个像素电路的光电转换装置中，在每个像素电路中与主电极连接到光电转换单元的电荷累积节点的读取晶体管在五极管区域中被操作，以便读出一个 每个二极管的光电转换信号到浮动扩散。

公开(公告)号：US20050259167A1

公开(公告)日：2005-11-24

申请号：US11130160

申请日：2005-05-17

申请人： Shunsuke Inoue ,  Shin Kikuchi

发明人： Shunsuke Inoue ,  Shin Kikuchi

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/347 ,  H04N5/357 ,  H04N5/374 ,  H04N5/217

CPC分类号： H04N5/378 ,  H04N5/343 ,  H04N5/347

摘要： In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.

摘要翻译： 在具有从多个像素添加信号的装置的固体摄像装置中，本发明实现了高S / N，并且实现了适用于静态图像拾取和运动图像拾取两者的固态图像拾取装置 。 固体摄像装置是固体摄像装置，其具有像素单元，具有二维排列的多个像素，并输出通过光电转换得到的像素信号，并具有第一读取模式 每个像素的像素信号，以及添加和读取多个像素信号的第二模式，具有用于在第一模式和第二模式中以不同增益执行读出的可变增益列放大器。 固态摄像装置具有分别输出来自一行排列的多个像素的输出信号的多条输出线，并且可变增益放大器中的至少一方与多条输出线连接。 使得在第二模式中的读出时的增益高于在第一模式下的读出时的增益。

公开(公告)号：US20050184322A1

公开(公告)日：2005-08-25

申请号：US11054316

申请日：2005-02-10

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L31/062

CPC分类号： H01L27/14601 ,  H01L21/28525 ,  H01L23/53271 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficienly before entering into the floating diffusion section, thereby making the aliasing extremely small.

摘要翻译： 本发明提供一种固态图像拾取装置，其在黑暗状态下不会阴影，并且能够使动态范围和S / N高。 附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508表示形成浮动扩散的N型高浓度区域，也表示为 漏极区域。 附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。 从表面入射的光通过没有金属第三层525的孔径进入光电二极管。 在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮动之前多次重复反射以充分衰减 扩散部分，从而使得混叠非常小。

公开(公告)号：US06476887B1

公开(公告)日：2002-11-05

申请号：US09929036

申请日：2001-08-15

申请人： Yasuhiro Sekine ,  Shunsuke Inoue ,  Hiroshi Mizuno

发明人： Yasuhiro Sekine ,  Shunsuke Inoue ,  Hiroshi Mizuno

IPC分类号： G02F11333

CPC分类号： G02F1/1334 ,  G02F2001/13345

摘要： This invention provides a liquid crystal display which comprises a first region including a display region, and a second region being outside the first region, wherein the first and second regions both contain liquid crystal in a polymer network, and a part of the polymer network of the second region is different in structure from the polymer network of the first region, and the part is present in the second region asymmetrically with respect to the first region, and a production method for a liquid crystal display, which comprises providing a liquid crystal material and a prepolymer material in a space between a pair of substrates at least one of which is transparent, and polymerizing the prepolymer material by scanning a first region including a display region and a second region outside the first region with a light beam which causes polymerization.

摘要翻译： 本发明提供了一种液晶显示器，其包括包括显示区域的第一区域和位于第一区域外部的第二区域，其中第一和第二区域均包含聚合物网络中的液晶，以及聚合物网络的一部分 所述第二区域的结构与所述第一区域的聚合物网络不同，并且所述部分相对于所述第一区域不对称地存在于所述第二区域中，以及液晶显示器的制造方法，其包括提供液晶材料 以及预聚物材料，在一对基板之间的空间中，其中至少一个是透明的，并且通过用引起聚合的光束扫描包括显示区域和第一区域外的第二区域的第一区域来聚合预聚物材料。

公开(公告)号：US06172723B2

公开(公告)日：2001-01-09

申请号：US09188106

申请日：1998-11-09

申请人： Shunsuke Inoue ,  Katsumi Kurematsu ,  Osamu Koyama

发明人： Shunsuke Inoue ,  Katsumi Kurematsu ,  Osamu Koyama

IPC分类号： G02F11335

CPC分类号： G02F1/133553 ,  G02F1/133512 ,  G02F1/133526

摘要： A reflection type liquid crystal display device, having a first substrate having an array of a plurality of light reflecting pixel electrodes, a second substrate having an array of a plurality of microlenses, and liquid crystals sandwiched between the first and second substrates for modulating incident light entering between the first and second substrates and reflected by the pixel electrodes to form an optical display, wherein each of the light reflecting pixel electrodes includes a high reflectivity region formed near at a focal point upon which light incident upon a microlens is focussed, the high reflectivity region reflecting the incident light, and a low reflectivity region formed surrounding the high reflectivity region, the low reflectivity region limiting a reflection of incident light components of stray light to be caused by aberration among light passed through the microlens.

摘要翻译： 一种反射型液晶显示装置，具有具有多个光反射像素电极的阵列的第一基板，具有多个微透镜的阵列的第二基板以及夹在第一和第二基板之间的液晶，用于调制入射光 进入第一和第二基板并由像素电极反射以形成光学显示器，其中每个光反射像素电极包括在入射到微透镜上的光聚焦的焦点附近形成的高反射率区域，高 反射区域反射入射光，低反射率区域围绕高反射率区域形成，低反射率区域限制由穿过微透镜的光中的像差引起的杂散光的入射光分量的反射。

公开(公告)号：US5913111A

公开(公告)日：1999-06-15

申请号：US587661

申请日：1996-01-17

申请人： Yuzo Kataoka ,  Shunsuke Inoue

发明人： Yuzo Kataoka ,  Shunsuke Inoue

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00 ,  H01L21/22 ,  H01L21/38 ,  H01L21/84

CPC分类号： H01L29/6675 ,  H01L21/3003 ,  H01L29/41783 ,  H01L29/66575 ,  H01L29/66659 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78645

摘要： This invention provides a transistor manufacture method comprising the steps of forming, on a semiconductor substrate, an insulating film being made open at least in an introducing portion through which an impurity for forming a drain region other than a lightly-doped region is introduced, then forming a gate electrode and a drain electrode each containing an impurity, and then introducing the impurity through between the gate electrode and the drain electrode to thereby form the lightly-doped region; and introducing the impurity from the drain electrode through the impurity introducing portion with heat treatment, to thereby form the drain region. A transistor manufactured by the above method is also provided.

摘要翻译： 本发明提供了一种晶体管制造方法，包括以下步骤：至少在引入用于形成除了轻掺杂区域以外的漏极区域的杂质的引入部分中，在半导体衬底上形成绝缘膜，然后 形成各自含有杂质的栅电极和漏极，然后通过栅电极和漏电极之间引入杂质，形成轻掺杂区; 并通过热处理从漏电极引入杂质通过杂质导入部分，从而形成漏区。 还提供了通过上述方法制造的晶体管。