公开(公告)号：US5913111A

公开(公告)日：1999-06-15

申请号：US587661

申请日：1996-01-17

申请人： Yuzo Kataoka ,  Shunsuke Inoue

发明人： Yuzo Kataoka ,  Shunsuke Inoue

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00 ,  H01L21/22 ,  H01L21/38 ,  H01L21/84

CPC分类号： H01L29/6675 ,  H01L21/3003 ,  H01L29/41783 ,  H01L29/66575 ,  H01L29/66659 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78645

摘要： This invention provides a transistor manufacture method comprising the steps of forming, on a semiconductor substrate, an insulating film being made open at least in an introducing portion through which an impurity for forming a drain region other than a lightly-doped region is introduced, then forming a gate electrode and a drain electrode each containing an impurity, and then introducing the impurity through between the gate electrode and the drain electrode to thereby form the lightly-doped region; and introducing the impurity from the drain electrode through the impurity introducing portion with heat treatment, to thereby form the drain region. A transistor manufactured by the above method is also provided.

摘要翻译： 本发明提供了一种晶体管制造方法，包括以下步骤：至少在引入用于形成除了轻掺杂区域以外的漏极区域的杂质的引入部分中，在半导体衬底上形成绝缘膜，然后 形成各自含有杂质的栅电极和漏极，然后通过栅电极和漏电极之间引入杂质，形成轻掺杂区; 并通过热处理从漏电极引入杂质通过杂质导入部分，从而形成漏区。 还提供了通过上述方法制造的晶体管。

公开(公告)号：US5731240A

公开(公告)日：1998-03-24

申请号：US416487

申请日：1995-04-04

申请人： Yuzo Kataoka

发明人： Yuzo Kataoka

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/60 ,  H01L29/732

CPC分类号： H01L21/76897 ,  H01L29/66272

摘要： A method of manufacturing a semiconductor device includes the steps of: depositing a semiconductor film onto a semiconductor substrate, the semiconductor film having a main component which is the same material as the semiconductor substrate; and forming a first insulating layer on the semiconductor substrate. This method also includes the steps of: removing predetermined areas from the first insulating layer and the semiconductor film so as to form an opening; forming a second insulating layer inside the opening and on the first insulating layer; and removing the second insulating layer by anisotropic etching so that the side wall of the opening remains.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上沉积半导体膜，该半导体膜具有与半导体衬底相同的主要成分; 以及在所述半导体衬底上形成第一绝缘层。 该方法还包括以下步骤：从第一绝缘层和半导体膜去除预定区域以形成开口; 在所述开口内部和所述第一绝缘层上形成第二绝缘层; 并通过各向异性蚀刻去除第二绝缘层，使得开口的侧壁残留。

公开(公告)号：US5569614A

公开(公告)日：1996-10-29

申请号：US435834

申请日：1995-05-05

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5364802A

公开(公告)日：1994-11-15

申请号：US130461

申请日：1993-10-01

申请人： Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

发明人： Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

IPC分类号： H01L21/331 ,  H01L21/335 ,  H01L21/74 ,  H01L21/761 ,  H01L29/08 ,  H01L29/417

CPC分类号： H01L29/66416 ,  H01L21/743 ,  H01L21/761 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/66272

摘要： A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

摘要翻译： 包括双极晶体管的半导体器件具有包括第一导电类型的第一半导体区域和具有比第一半导体区域更高的电阻的第一导电类型的第二半导体区域的集电极区域，包括半导体区域的半导体区域的基极区域 第二导电类型和包括第一导电类型的半导体区域的发射极区域。 半导体器件还包括金属层区域，用于在设置在集电区域的第二半导体区域层内的集电极区域上连接第一半导体区域和集电极电极。

公开(公告)号：US20090053849A1

公开(公告)日：2009-02-26

申请号：US12259347

申请日：2008-10-28

申请人： Ken-ichiro Ura ,  Yoshihiko Fukumoto ,  Yuzo Kataoka

发明人： Ken-ichiro Ura ,  Yoshihiko Fukumoto ,  Yuzo Kataoka

IPC分类号： H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.

摘要翻译： 光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。 此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。 用于向栅电极施加电压的布线设置在隔离区上。 这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

公开(公告)号：US07459760B2

公开(公告)日：2008-12-02

申请号：US11767779

申请日：2007-06-25

申请人： Ken-ichiro Ura ,  Yoshihiko Fukumoto ,  Yuzo Kataoka

发明人： Ken-ichiro Ura ,  Yoshihiko Fukumoto ,  Yuzo Kataoka

IPC分类号： H01L29/78

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.

摘要翻译： 光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。 此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。 用于向栅电极施加电压的布线设置在隔离区上。 这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

公开(公告)号：US5306934A

公开(公告)日：1994-04-26

申请号：US823604

申请日：1992-01-17

申请人： Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

发明人： Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

IPC分类号： H01L21/331 ,  H01L21/335 ,  H01L21/74 ,  H01L21/761 ,  H01L29/08 ,  H01L29/417 ,  H01L29/80 ,  H01L23/48

CPC分类号： H01L29/66416 ,  H01L21/743 ,  H01L21/761 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/66272

摘要： A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

摘要翻译： 包括双极晶体管的半导体器件具有包括第一导电类型的第一半导体区域和具有比第一半导体区域更高的电阻的第一导电类型的第二半导体区域的集电极区域，包括半导体区域的半导体区域的基极区域 第二导电类型和包括第一导电类型的半导体区域的发射极区域。 半导体器件还包括金属层区域，用于在设置在集电区域的第二半导体区域层内的集电极区域上连接第一半导体区域和集电极电极。

公开(公告)号：US5963812A

公开(公告)日：1999-10-05

申请号：US814016

申请日：1997-03-10

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/336

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5653810A

公开(公告)日：1997-08-05

申请号：US407050

申请日：1995-03-17

申请人： Yuzo Kataoka ,  Yukihiro Hayakawa

发明人： Yuzo Kataoka ,  Yukihiro Hayakawa

IPC分类号： C23C16/50 ,  C23C16/04 ,  C23C16/509 ,  H01J37/32 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/04 ,  C23C16/509 ,  H01J37/32568 ,  H01L21/28562 ,  H01L21/28575 ,  H01L21/32051 ,  H01J2237/332

摘要： An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy for generating plasma, a heating means for heating a plurality of substrates disposed between the first and second electrodes, and a gas feed means that feeds into the reaction chamber a starting material gas for forming metal films; the plasma is generated across the first and second electrodes to form metal films on the plurality of substrates.The apparatus can form metal films at a high throughput at one time process, and at a low cost.

摘要翻译： 用于在基板上形成金属膜的金属膜形成装置包括：反应室，交替布置在反应室中的多个第一和第二电极，向第一和第二电极提供用于产生等离子体的电能的能量供给装置， 加热装置，用于加热设置在第一和第二电极之间的多个基板;以及气体供给装置，其将用于形成金属膜的原料气体进料到反应室中; 跨越第一和第二电极产生等离子体，以在多个基板上形成金属膜。 该设备可以在一次工艺时以高产量形成金属膜，并以低成本形成。

公开(公告)号：US5580822A

公开(公告)日：1996-12-03

申请号：US449748

申请日：1995-05-25

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/44

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452 ,  Y10S438/935

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。