公开(公告)号：US06825537B2

公开(公告)日：2004-11-30

申请号：US10683868

申请日：2003-10-10

申请人： Susumu Iwamoto ,  Yasuhiko Onishi ,  Takahiro Sato ,  Tatsuji Nagaoka

发明人： Susumu Iwamoto ,  Yasuhiko Onishi ,  Takahiro Sato ,  Tatsuji Nagaoka

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/7397

摘要： In a trench super junction semiconductor element having a parallel p-n junction layer 14 with n-drift regions 12 and p-partition regions 13, both extending in a depth direction, being alternately joined, a part 20 in a shape of a three-dimensional curved surface in the end portion of each of trenches is formed in a p-partition region 13. A section in the p-partition region 13 surrounding the part 20 in a shape of a three-dimensional curved surface of the end portion of each of the trenches is made as a p+-region 21 in which an impurity concentration is higher than that in a section thereunder so that an electric field is increased at a boundary between the p+-region 21 and the n-drift region 12, thereby lessening electric field concentration to the part 20 in a shape of a three-dimensional curved surface of the end portion of the trench. Moreover, the section in the p-partition region 13 surrounding the part 20 in a shape of a three-dimensional curved surface in the end portion of the trench can be formed wider than the section thereunder. This inhibits lowering in a breakdown voltage and, along with this, increases reliability of a gate insulator film.

摘要翻译： 在具有平行pn结层14的沟槽超结半导体元件中，其具有n个漂移区域12和p分隔区域13，两者都在深度方向上延伸交替地接合，形成为三维弯曲形状的部分20 每个沟槽的端部中的表面形成在p分隔区域13中。在p分隔区域13中的每个的端部的三维曲面形状的部分20周围的部分 沟槽被制成为其中杂质浓度高于其下段的杂质浓度的ap +区域21，使得在p +区域21和n-漂移区域12之间的边界处的电场增加 从而减小了沟槽端部的三维曲面形状的部分20的电场浓度。 此外，在沟槽端部的三维曲面形状的围绕部分20的p分隔区域13中的部分可以形成得比其下面的部分更宽。 这抑制了击穿电压的降低，并且与此同时增加了栅极绝缘膜的可靠性。

公开(公告)号：US06756636B2

公开(公告)日：2004-06-29

申请号：US09844481

申请日：2001-04-27

申请人： Yasuhiko Onishi ,  Tatsuhiko Fujihira ,  Susumu Iwamoto ,  Takahiro Sato

发明人： Yasuhiko Onishi ,  Tatsuhiko Fujihira ,  Susumu Iwamoto ,  Takahiro Sato

IPC分类号： H01L2976

CPC分类号： H01L29/1095 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/7816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.

摘要翻译： 横向半导体器件包括交替导电类型层，用于在器件的导通状态中提供第一半导体电流路径并且耗尽器件的截止状态，其具有用于实现高的击穿电压的改进的结构 交替导电型层的弯曲部分。

公开(公告)号：US06741154B2

公开(公告)日：2004-05-25

申请号：US10012321

申请日：2001-12-12

申请人： Kunihiko Kawasaki ,  Hiroshi Momoi ,  Takashi Suzuki ,  Takahiro Sato

发明人： Kunihiko Kawasaki ,  Hiroshi Momoi ,  Takashi Suzuki ,  Takahiro Sato

IPC分类号： H01F500

CPC分类号： C04B35/265 ,  C04B35/26 ,  C04B2235/724 ,  C04B2235/726 ,  H01F17/0013 ,  H01F41/046 ,  H01G4/40

摘要： A nickel-basis ferrite material, a sulfur content of ferrite powder in a raw material stage is in a range of from 300 ppm to 900 ppm on S basis and a chlorine content of the ferrite powder is not higher than 100 ppm on Cl basis, while a sulfur content of a ferrite sinter after burning is not higher than 100 ppm on S basis and a chlorine content of the ferrite sinter is not higher than 25 ppm on Cl basis. Furthermore, a ferrite material is constituted by an Ni ferrite material using a nickel compound as a raw material, the nickel compound having a specific surface area in a range of from 1.0 m2/g to 10 m2/g and a sulfur content in a range of from 100 ppm to 1,000 ppm on S basis.

摘要翻译： 镍基铁氧体材料，原料级铁氧体粉末的硫含量在S为300〜900ppm的范围内，铁素体粉末的氯含量为Cl为100ppm以下， 而烧成后的铁素体烧结体的硫含量以S为基准不高于100ppm，铁素体烧结体的氯含量不高于Cl为25ppm。 此外，铁氧体材料由使用镍化合物作为原料的镍铁氧体材料构成，镍化合物的比表面积为1.0m 2 / g〜10m 2 / g， S含量范围为100ppm至1,000ppm的硫含量。

公开(公告)号：US06734780B2

公开(公告)日：2004-05-11

申请号：US09799688

申请日：2001-03-07

申请人： Takayoshi Endo ,  Hiroki Kondo ,  Goro Nakamura ,  Takahiro Sato

发明人： Takayoshi Endo ,  Hiroki Kondo ,  Goro Nakamura ,  Takahiro Sato

IPC分类号： H01H85153

CPC分类号： H01H85/0417 ,  H01H85/0017 ,  H01H85/147 ,  H01H85/47

摘要： A fuse assembly 1 including a pair of terminals 2 which are arranged in parallel to each other, a housing 4 having a cavity 20 for containing one end portions 3a of the terminals, and a fusible body 5 interconnecting the terminals 2. The fusible body 5 consists of a pair of supporting portions 39 connected to end faces 8 of the terminals 2, and a connecting portion 40 interconnecting the supporting portions 39. The fuse assembly 1 further includes anchoring parts 30 for fixing the fusible body 5 to the housing 4 and second anchoring parts 31 for fixing the terminals 2 to the housing 4. The anchoring parts 30 include through holes 45 formed in the supporting portions 39, and projections 46 projected from an inner face 17 of the housing 4 and adapted to be engaged in the through holes 45. Thus, conduction of heat generated in the fusible body 5 to electrical equipments connected to the terminals can be restrained.

摘要翻译： 包括彼此平行布置的一对端子2的保险丝组件1，具有用于容纳端子的一个端部3a的空腔20的壳体4和将端子2互连的可熔体5.熔断体5 由连接于端子2的端面8的一对支撑部分39和连接支撑部分39的连接部分40构成。熔断器组件1还包括用于将可熔体5固定到壳体4的固定部件30和第二 锚固部件31用于将端子2固定到壳体4.锚固部件30包括形成在支撑部分39中的通孔45和从壳体4的内表面17突出并适于接合在通孔中的突起46 因此，可以抑制在可熔体5中产生的热量与连接到端子的电气设备的传导。

公开(公告)号：US06674126B2

公开(公告)日：2004-01-06

申请号：US10073671

申请日：2002-02-11

申请人： Susumu Iwamoto ,  Tatsuhiko Fujihira ,  Katsunori Ueno ,  Yasuhiko Onishi ,  Takahiro Sato ,  Tatsuji Nagaoka

发明人： Susumu Iwamoto ,  Tatsuhiko Fujihira ,  Katsunori Ueno ,  Yasuhiko Onishi ,  Takahiro Sato ,  Tatsuji Nagaoka

IPC分类号： A01L29772

CPC分类号： H01L29/7802 ,  H01L29/0634

摘要： A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.

摘要翻译： 半导体器件有助于在漏极漂移区周围的半导体芯片的部分中获得更高的击穿电压并且提高其雪崩耐受能力。 根据本发明的垂直MOSFET包括漏极层; 漏极层上的漏极漂移区，包括第一交替导电型层的漏极漂移区; 在漏极层和漏极漂移区域周围的击穿耐受区域（半导体芯片的外围区域），在MOSFET的导通状态基本上不提供电流路径的击穿承受区域，击穿耐受区域在断开状态 MOSFET，包括第二交替导电类型层的击穿耐受区域和栅极焊盘下方的下部区域，以及包括第三交变导电类型层的下部区域。

公开(公告)号：US06611021B1

公开(公告)日：2003-08-26

申请号：US09693574

申请日：2000-10-20

申请人： Yasuhiko Onishi ,  Tatsuhiko Fujihira ,  Susumu Iwamoto ,  Takahiro Sato

发明人： Yasuhiko Onishi ,  Tatsuhiko Fujihira ,  Susumu Iwamoto ,  Takahiro Sato

IPC分类号： H01L2994

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/66712

摘要： A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. The vertical MOSFET according to the invention includes an alternating-conductivity-type drain drift layer on an n+-type drain layer as a substrate. The alternating-conductivity-type drain drift layer is formed of n-type drift current path regions and p-type partition regions alternately arranged laterally with each other. The n-type drift current path regions and p-type partition regions extend in perpendicular to n+-type drain layer. Each p-type partition region is formed by vertically connecting p-type buried diffusion unit regions Up. The n-type drift current path regions are residual regions, left after connecting p-type buried diffusion unit regions Up, with the conductivity type thereof unchanged. The alternating-conductivity-type drain drift layer is formed by repeating the step of epitaxial layer growth and the step of implanting p-type impurity ions and by diffusing the impurity ions at once from the impurity sources located on multiple levels.

摘要翻译： 半导体器件包括易于制造的交替导电类型的改进的漏极漂移层结构，并且有助于实现高电流容量和高击穿电压，并提供制造半导体器件的方法。 根据本发明的垂直MOSFET包括作为衬底的n +型漏极层上的交替导电型漏极漂移层。 交流导电型漏极漂移层由n型漂移电流路径区域和彼此交替布置的p型分隔区域形成。 n型漂移电流路径区域和p型分隔区域垂直于n +型漏极层延伸。 每个p型分隔区域通过垂直连接p型埋入扩散单元区域Up而形成。 n型漂移电流路径区域是在连接p型埋入扩散单元区域Up之后剩余的区域，其导电类型不变。 交替导电型漏极漂移层是通过重复外延层生长的步骤和注入p型杂质离子的步骤和通过从位于多个层上的杂质源一次扩散杂质离子而形成的。

公开(公告)号：US06556121B2

公开(公告)日：2003-04-29

申请号：US09819763

申请日：2001-03-29

申请人： Takayoshi Endo ,  Goro Nakamura ,  Hiroki Kondo ,  Takahiro Sato

发明人： Takayoshi Endo ,  Goro Nakamura ,  Hiroki Kondo ,  Takahiro Sato

IPC分类号： H01H8502

CPC分类号： H01H85/0417 ,  H01H69/02 ,  H01H85/10

摘要： A fuse assembly which can securely halt an electric power supply to a load after a blowout of a fuse element in the fuse assembly is provided. The fuse assembly 1 has a pair of terminals 2, a housing 4 and a fuse element 5. Ends 3a of the terminals 2 are received into the housing 4. A pair of the terminals 2 and the fuse element 5 are formed integrally with each other. The fuse element 5 has a pair of supporting parts 39 and the central part 40. The supporting part 39 has a first extended part 41 connected to an end surface 8 of the terminal 2. The central part 40 connects a pair of the supporting parts 39 with each other and is situated at the center between a pair of the terminals 2. A thickness T2 of the fuse element 5 at the central part 40 is formed smaller than a thickness T1 of the fuse element 5 at the first extended part 41.

摘要翻译： 提供一种保险丝组件，其能够在保险丝组件中的熔丝元件的吹出之后牢固地停止对负载的电力供应。 保险丝组件1具有一对端子2，壳体4和保险丝元件5.端子2的端部3a容纳在壳体4中。一对端子2和熔丝元件5彼此一体地形成 。 保险丝元件5具有一对支撑部39和中央部40.支撑部39具有与端子2的端面8连接的第一延伸部41.中心部40将一对支撑部39 彼此并且位于一对端子2之间的中心。中心部分40处的熔丝元件5的厚度T2形成为小于第一延伸部分41处的熔丝元件5的厚度T1。

公开(公告)号：US06549387B1

公开(公告)日：2003-04-15

申请号：US09642941

申请日：2000-08-22

申请人： Goro Nakamura ,  Takahiro Sato

发明人： Goro Nakamura ,  Takahiro Sato

IPC分类号： H02H3027

CPC分类号： H01H1/38 ,  H01H39/00 ,  H01H2001/508 ,  H01H2039/008

摘要： A reset knob 20 is mounted to a tip end of a shaft 16. A torsion spring 21 and a returning motion-preventing lock 22 are bent and accommodated in the reset knob 20. The returning motion-preventing lock 22 can rotate around a reset-knob fulcrum 20a of the reset knob 20 by a load of the torsion spring 21. Therefore, the returning motion-preventing lock 22 jumps out from inside of the reset knob 20 which is firmly connected together with the shaft 16 by a force of the torsion spring 21, thereby preventing the shaft 16 and the reset knob 20 from returning to an initial position. Further, since the returning motion-preventing lock 22 can easily be accommodated in the reset knob 20 manually, a reset operation for returning the shaft 16 to its original initial position can be carried out easily.

摘要翻译： 复位旋钮20安装到轴16的尖端。扭簧21和返回防止移动锁22弯曲并容纳在复位旋钮20中。返回运动防止锁22可以围绕复位旋钮20旋转。 通过扭力弹簧21的负载旋转复位旋钮20的旋钮支点20a。因此，返回运动防止锁22从复位旋钮20的内部跳出，该复位旋钮20通过扭转力与轴16牢固地连接在一起 弹簧21，从而防止轴16和复位旋钮20返回到初始位置。 此外，由于返回运动防止锁22可以容易地被手动地容纳在复位旋钮20中，所以可以容易地执行用于将轴16返回到其原始初始位置的复位操作。

公开(公告)号：US06545585B2

公开(公告)日：2003-04-08

申请号：US09801801

申请日：2001-03-09

申请人： Takayoshi Endo ,  Takahiro Sato ,  Hiroki Kondo ,  Norihiro Ohashi ,  Goro Nakamura

发明人： Takayoshi Endo ,  Takahiro Sato ,  Hiroki Kondo ,  Norihiro Ohashi ,  Goro Nakamura

IPC分类号： H01H8508

CPC分类号： H01H85/0417

摘要： A fuse 1 includes a pair of terminals 2, housing 4 and fusible body 5. The terminals 2 are provided so that their one ends are housed in the housing 4 and their other ends are exposed externally from the housing 4. The terminals 2 each has a recess to enlarge the interval therebetween. The recess 6 consists of a flat face 10 and step face 11. The housing 4 includes a pair of end walls 12a, 12b, and a pair of partition walls 22. The inner faces 15a, 15b of the pair of end walls 12a, 12b are opposite to each other in a direction orthogonal to the direction the pair of terminals are arranged in parallel and extend along the end faces of the terminals 2. The partition wall extend from the inner face 15b toward the inner face 15a. The second partition walls each covers the flat face 10. In this configuration, when the power with a current value which exceeds the fusing current value of the fusible body is supplied, supply of the power to the load can be surely stopped.

摘要翻译： 保险丝1包括一对端子2，壳体4和可熔体5.端子2设置成使得它们的一端容纳在壳体4中，并且它们的另一端从外壳4暴露在外部。端子2各自具有 一个凹槽来扩大它们之间的间隔。 凹部6由平面10和台阶面11组成。壳体4包括一对端壁12a，12b和一对分隔壁22.一对端壁12a，12b的内表面15a，15b 在与该一对端子的方向正交的方向上彼此相对，并且沿着端子2的端面延伸。分隔壁从内表面15b向内表面15a延伸。 第二分隔壁各自覆盖平面10.在该结构中，当提供具有超过可熔体的熔化电流值的电流值的电力时，能够可靠地停止对负载的供电。

公开(公告)号：US06496096B2

公开(公告)日：2002-12-17

申请号：US09799689

申请日：2001-03-07

申请人： Hiroki Kondo ,  Goro Nakamura ,  Takahiro Sato

发明人： Hiroki Kondo ,  Goro Nakamura ,  Takahiro Sato

IPC分类号： H01H85175

CPC分类号： H01H85/0417 ,  H01H85/147 ,  H01H85/1755

摘要： A fuse assembly, in which a pluraity of members constituting a housing of the fuse assembly can be mounted tightly and whether the fuse element has blown out or not can be easily checked, is provided. The fuse assembly 1 has a pair of terminals 2, a fuse element 5 and a housing 4. Each end 3a of the terminals 2 is received into the housing 4. The fuse element 5 connects the terminals 2 with each other. The fuse element 5 has a pair of locking claws 61. The housing 4 has casing members 4a and 4b, which receive each end 3a of the terminals 2 and the fuse element 5 when the casing members 4a and 4b are fit with each other in the housing 4. Each casing member 4a and 4b has a locking recess 64 for engaging with the locking claw 61. One locking claw 61 engages with one locking recess 64, while an opposite locking claw 61 engages with an opposite locking recess 64.

摘要翻译： 可以容易地检查熔断器组件，其中可以容易地检查其中构成保险丝组件的壳体的构件的柔性可以被紧密地安装以及熔丝元件是否已经被吹出。 保险丝组件1具有一对端子2，保险丝元件5和壳体4.端子2的每个端部3a容纳在壳体4中。熔丝元件5将端子2彼此连接。 保险丝元件5具有一对锁定爪61.壳体4具有外壳元件4a和4b，当壳体元件4a和4b彼此配合时，壳体元件4a和4b接收端子2和熔丝元件5的各个端部3a。 每个壳体构件4a和4b具有用于与锁定爪61接合的锁定凹部64.一个锁定爪61与一个锁定凹部64接合，而相对的锁定爪61与相对的锁定凹部64接合。