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公开(公告)号:US5052225A
公开(公告)日:1991-10-01
申请号:US481251
申请日:1990-02-20
申请人: Yasushi Ishii
发明人: Yasushi Ishii
IPC分类号: G01C19/5698
CPC分类号: G01C19/5698
摘要: An acoustic gyro comprises two vessels disposed at both sides of a single separator, at least one sensing duct coupled with these two vessels, a single sound source provided on the separator to differentially provide a volume change to the two vessels, and at least one sound detector attached to each of at least one sensing duct, wherein, when the gyro is rotated, the sound detector detects a change in the sound pressure caused by the Coriolis force at a position other than an acoustic neutral point within the sensing duct to obtain an output corresponding to an angular rate of the rotation.
摘要翻译: 声陀螺仪包括设置在单个分离器的两侧的两个容器,与这两个容器耦合的至少一个感测导管,设置在分离器上的单个声源以差分地提供对两个容器的体积变化,以及至少一个声音 检测器附接到至少一个感测通道中的每一个,其中当陀螺仪旋转时,声音检测器检测由科里奥利力在感测管道内的声中性点之外的位置引起的声压变化,以获得 输出对应于旋转的角速度。
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公开(公告)号:US08633530B2
公开(公告)日:2014-01-21
申请号:US13144744
申请日:2009-10-23
申请人: Kota Funayama , Hiraku Chakihara , Yasushi Ishii
发明人: Kota Funayama , Hiraku Chakihara , Yasushi Ishii
IPC分类号: H01L21/28 , H01L29/792 , H01L21/336 , H01L27/06
CPC分类号: H01L29/792 , H01L21/28273 , H01L21/28282 , H01L23/53214 , H01L23/53257 , H01L23/535 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11575 , H01L29/0653 , H01L29/42324 , H01L29/4234 , H01L29/42344 , H01L29/66833 , H01L29/7831 , H01L2924/0002 , H01L2924/00
摘要: In a power feeding region of a memory cell (MC) in which a sidewall-shaped memory gate electrode (MG) of a memory nMIS (Qnm) is provided by self alignment on a side surface of a selection gate electrode (CG) of a selection nMIS (Qnc) via an insulating film, a plug (PM) which supplies a voltage to the memory gate electrode (MG) is embedded in a contact hole (CM) formed in an interlayer insulating film (9) formed on the memory gate electrode (MG) and is electrically connected to the memory gate electrode (MG). Since a cap insulating film (CAP) is formed on an upper surface of the selection gate electrode (CG), the electrical conduction between the plug (PM) and the selection gate electrode (CG) can be prevented.
摘要翻译: 在存储单元(MC)的馈电区域中,在存储单元(MC)的馈电区域中,通过自对准在存储器nMIS(Qnm)的选择栅极(CG)的侧表面上提供存储器nMIS(Qnm)的侧壁形状的存储栅极(MG) 通过绝缘膜选择nMIS(Qnc),向存储栅电极(MG)提供电压的插头(PM)嵌入在形成在存储栅上的层间绝缘膜(9)中形成的接触孔(CM) 电极(MG)并且电连接到存储栅电极(MG)。 由于在选择栅电极(CG)的上表面上形成帽绝缘膜(CAP),所以可以防止插头(PM)与选择栅电极(CG)之间的导电。
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公开(公告)号:US08395203B2
公开(公告)日:2013-03-12
申请号:US12951012
申请日:2010-11-20
申请人: Hiraku Chakihara , Yasushi Ishii
发明人: Hiraku Chakihara , Yasushi Ishii
IPC分类号: H01L29/788 , H01L21/8238
CPC分类号: H01L21/28273 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L27/11573 , H01L29/42324 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要: Over the top of a semiconductor substrate, a lamination pattern having a control gate electrode, a first insulation film thereover, and a second insulation film thereover is formed. Over the top of the semiconductor substrate, a memory gate electrode adjacent to the lamination pattern is formed. Between the control gate electrode and the semiconductor substrate, a third insulation film for gate insulation film is formed. Between the memory gate electrode and the semiconductor substrate, and between the lamination pattern and the memory gate electrode, a fourth insulation film including a lamination film of a silicon oxide film, a silicon nitride film, and another silicon oxide film is formed. At the sidewall on the side of the lamination pattern adjacent to the memory gate electrode, the first insulation film is retreated from the control gate electrode and the second insulation film, and the upper end corner portion of the control gate electrode is rounded.
摘要翻译: 在半导体衬底的顶部上,形成了具有控制栅电极,其上的第一绝缘膜和其上的第二绝缘膜的叠层图案。 在半导体衬底的顶部上,形成与层压图案相邻的存储栅电极。 在控制栅极电极和半导体衬底之间形成第三绝缘膜用绝缘膜。 在存储栅电极和半导体衬底之间以及叠层图案和存储栅电极之间形成包括氧化硅膜,氮化硅膜和另一氧化硅膜的叠层膜的第四绝缘膜。 在与存储栅电极相邻的层叠图案侧的侧壁处,第一绝缘膜从控制栅极电极和第二绝缘膜退回,并且控制栅电极的上端角部分被倒圆。
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公开(公告)号:US20120292679A1
公开(公告)日:2012-11-22
申请号:US13468992
申请日:2012-05-10
申请人: Kota FUNAYAMA , Hiraku Chakihara , Yasushi Ishii
发明人: Kota FUNAYAMA , Hiraku Chakihara , Yasushi Ishii
IPC分类号: H01L29/94 , H01L21/336
CPC分类号: H01L27/11563 , G11C16/0466 , H01L21/28282 , H01L27/1052 , H01L27/11517 , H01L27/11565 , H01L27/11568 , H01L28/40 , H01L29/4234 , H01L29/66477 , H01L29/66833 , H01L29/792
摘要: A memory cell of a nonvolatile memory and a capacitive element are formed over the same semiconductor substrate. The memory cell includes a control gate electrode formed over the semiconductor substrate via a first insulating film, a memory gate electrode formed adjacent to the control gate electrode over the semiconductor substrate via a second insulating film, and the second insulating film having therein a charge storing portion. The capacitive element includes a lower electrode formed of the same layer of a silicon film as the control gate electrode, a capacity insulating film formed of the same insulating film as the second insulating film, and an upper electrode formed of the same layer of a silicon film as the memory gate electrode. The concentration of impurities of the upper electrode is higher than that of the memory gate electrode.
摘要翻译: 在相同的半导体衬底上形成非易失性存储器和电容元件的存储单元。 存储单元包括经由第一绝缘膜形成在半导体衬底上的控制栅极电极,经由第二绝缘膜在半导体衬底上与控制栅电极相邻形成的存储栅电极,并且其中具有电荷存储的第二绝缘膜 一部分。 电容元件包括由与控制栅电极相同的硅膜层形成的下电极,由与第二绝缘膜相同的绝缘膜形成的电容绝缘膜和由相同的硅层形成的上电极 薄膜作为记忆栅电极。 上部电极的杂质浓度高于记忆栅电极的浓度。
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公开(公告)号:US06729921B1
公开(公告)日:2004-05-04
申请号:US09591745
申请日:2000-06-12
申请人: Yasushi Ishii
发明人: Yasushi Ishii
IPC分类号: B63H2132
CPC分类号: F01N13/004 , F01N3/28 , F01N2590/021 , F02B61/04 , F02B61/045 , F02B75/007 , F02B2075/1816
摘要: A catalyzer arrangement in an outboard motor includes an improved construction that does not require a large space for furnishing a catalyzer having a relatively large volume and that keeps the catalyzer away from the body of water in which the outboard motor is operated. The outboard motor includes an engine having an internal or external exhaust section. A driveshaft housing of the motor is adapted to be mounted on an associated watercraft. An exhaust guide is mounted on the driveshaft housing for supporting the engine. The exhaust guide includes an internal exhaust section coupled to the exhaust section of the engine. An exhaust unit defines an internal exhaust section that is coupled to the exhaust section of the exhaust guide. The exhaust unit includes a catalyzer disposed in its internal exhaust section.
摘要翻译: 舷外马达中的催化剂装置包括改进的结构,其不需要大的空间用于提供具有相对较大体积的催化剂,并且使催化剂远离舷外马达操作的水体。 舷外马达包括具有内部或外部排气部分的发动机。 马达的驱动轴壳体适于安装在相关联的船舶上。 排气引导件安装在驱动轴壳体上用于支撑发动机。 排气引导件包括联接到发动机的排气部分的内部排气部分。 排气单元限定连接到排气引导件的排气部分的内部排气部分。 排气单元包括设置在其内部排气部分中的催化剂。
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