摘要:
A forming method of a refractive index matching film comprises steps: one end of an optical fiber is brought into contact with a liquid surface of a photo-curable refractive index matching solution; curing reaction light is made incident to the opposite end of the optical fiber and is emitted through the one end of the optical fiber so as to cure preliminarily the photo-curable refractive index matching solution in contact with the one end of the optical fiber; the curing reaction light is tentatively stopped; the one end of the optical fiber is separated from the liquid surface of the photo-curable refractive index matching solution; and the curing reaction light is made incident again from the opposite end of the optical fiber so as to cure the preliminarily cured photo-curable refractive index matching solution and form a refractive index matching film.
摘要:
An insulated wire includes a conductor, and an insulating layer of a porous member formed on the conductor by using a water-in-oil type emulsion (W/O emulsion) including a thermosetting liquid solventless varnish as the oil and water drops of water-soluble polymer contained in the thermosetting liquid solventless varnish as the water. The insulating layer of the porous member is formed by that the water-in-oil type emulsion is coated so as to form a thin film as a coated film, the thermosetting liquid solventless varnish as the oil is polymerized and cured after the formation of the thin film, and the water drops as the water is dried and removed after the curing of the thermosetting liquid solventless varnish.
摘要:
A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.
摘要:
[Summary] [Object] A method to hook a magnet wire extracted from a coil[Means to Solve Problems] A stator core 35 includes a core back 352 of a substantially annular shape. At a radially outer end portion of the core back 352 four teeth 351 are arranged radially. At the teeth 351, a coil 371 is formed by winding a magnet wire 37 via an insulator 36. A first insulator 361 configuring a lower half of the insulator 36 includes a first core back insulating portion 3611, 1 first teeth insulating portion 3612, and a first cylindrical portion 3613. A hook portion 4 is formed at the first core back insulating portion 3611 at radially outer side, and between the teeth 351. The magnet wire 37 extracted from the coil 371 is hooked on the hook portion 4. The magnet wire 37 hooked on the hook portion 4 is lead the magnet wire 37 around the hook portion 4 as a base, and is soldered to a land 381 formed above a circuit board 38.
摘要:
An optical fiber includes a core, a clad having a plurality of air holes at a periphery of the core, and a hardening resin filled in a sealed portion at an end of the plurality of air holes. The hardening resin after hardening has a fill length of 7 mm to 8 mm. An optical fiber connection structure includes the optical fiber with an end face butt-connected to another optical fiber. An optical connector includes the optical fiber, and a ferrule to which the optical fiber is attached.
摘要:
A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the first ferroelectric film, laminating on the first ferroelectric film a second thin ferroelectric film having the same crystalline structure as the first ferroelectric film. A field effect transistor or a ferroelectric capacitor includes the ferroelectric stacked-layer structure as a gate insulating film or a capacitor film.
摘要:
An optical connector according to the present invention comprises a ferrule and a V-groove board connected to the ferrule, wherein a first optical fiber and a second optical fiber being butt jointed in a V-groove formed in the V-groove board so as to be interconnected; the second optical fiber is connected to the first optical fiber through a refractive index matching material of cross-link curing type applied to an end surface on the V-groove board side of the first optical fiber; and spaces are provided in the V-groove so as to relax stress loaded on the refractive index matching material of cross-link curing type.
摘要:
An optical connector having: a ferrule into which a first optical fiber is inserted; an optical fiber connector disposed at an back end of the ferrule; and a cross-linkable refractive index matching member attached onto an end face on a back end side of the first optical fiber. The end face on the back end side of the first optical fiber and an end face of a second optical fiber to be inserted into the optical fiber connector from a back end side thereof are to be connected by a butting connection. The cross-linkable refractive index matching member is formed such that a cross-linkable refractive index matching agent is coated on the end face on the back end side of the first optical fiber, and the coated agent is cross-linked and hardened.
摘要:
A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.
摘要:
A semiconductor storage apparatus comprising: a ferroelectric memory; an SRAM 30; a counter 41; a CAM 10 that judges whether or not a block of data requested to be read out from the ferroelectric memory is stored in the SRAM 30; a storage control unit 51 that, if a result of the judgment is negative, performs a control to read out the requested block of data from the ferroelectric memory and stores a copy of the read-out block of data into a unit storage area in the SRAM 30 that corresponds to the count value indicated by the counter 41; and a counter control unit 52 that causes the counter 41 to update the count value each time a result of the judgment is negative.