摘要:
A method, system and computer program product are disclosed for rateless compression of non-binary sources. In one embodiment, the method comprises representing a sequence of non-binary source symbols as a sequence of sets of binary values; selecting a code for compressing the sets of binary values; determining a puncturing pattern, based on the selected code; and puncturing the sets of binary values, in patterns based on the puncturing pattern, to form a sequence of unpunctured values. A sequence of computed syndromes is determined based on the sequence of non-binary source symbols; and the sequence of unpunctured values and the sequence of computed syndromes are combined to form an output stream of data representing said sequence of non-binary source symbols. In one embodiment, none of the sets of binary values is punctured completely, and, for example, each of the sets of binary values may be punctured only partially.
摘要:
A method, system and computer program product are disclosed for rateless compression of non-binary sources. In one embodiment, the method comprises representing a sequence of non-binary source symbols as a sequence of sets of binary values; selecting a code for compressing the sets of binary values; determining a puncturing pattern, based on the selected code; and puncturing the sets of binary values, in patterns based on the puncturing pattern, to form a sequence of unpunctured values. A sequence of computed syndromes is determined based on the sequence of non-binary source symbols; and the sequence of unpunctured values and the sequence of computed syndromes are combined to form an output stream of data representing said sequence of non-binary source symbols. In one embodiment, none of the sets of binary values is punctured completely, and, for example, each of the sets of binary values may be punctured only partially.
摘要:
Multi-write coding of non-volatile memories including a method that receives write data, and a write address of a memory page. The memory page is in either an erased state or a previously written state. If the memory page is in the erased state: selecting a first codeword from a code such that the first codeword encodes the write data and is consistent with a target set of distributions of electrical charge levels in the memory page; and writing the first codeword to the memory page. If the memory page is in the previously written state: selecting a coset from a linear code such that the coset encodes the write data and includes one or more words that are consistent with previously written content of the memory page; selecting a subsequent codeword from the one or more words in the coset; and writing the subsequent codeword to the memory page.
摘要:
A system for the introduction of controlled correlation among multiple redundant representations of predictively encoded signals while avoiding predictive mismatch at a receiver when any given sub-set of the multiple representations is received. The system embodies a signal encoder and decoder. The decoder can comprise at least two signal adders for respectively receiving coefficient values and adding at least one predictive value transform to the coefficient value in order to generate and transmit a second set of coefficient values. The second set of coefficient values is subsequently received by a decoder means, wherein the decoder means transforms the received coefficient values and transmits the resultant coefficient values to a signal adder. Upon reception of the transformed coefficient values, the signal adder generates a third set of coefficient values; the third set of coefficients being used to reconstruct an approximate version of an encoded signal.
摘要:
A system for the introduction of controlled correlation among multiple redundant representations of predictively encoded signals while avoiding predictive mismatch at a receiver when any given sub-set of the multiple representations is received. The system embodies a signal encoder and decoder. The decoder can comprise at least two signal adders for respectively receiving coefficient values and adding at least one predictive value transform to the coefficient value in order to generate and transmit a second set of coefficient values. The second set of coefficient values is subsequently received by a decoder means, wherein the decoder means transforms the received coefficient values and transmits the resultant coefficient values to a signal adder. Upon reception of the transformed coefficient values, the signal adder generates a third set of coefficient values; the third set of coefficients being used to reconstruct an approximate version of an encoded signal.
摘要:
Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products.
摘要:
Solid-state storage management for a system that includes a main board and a solid-state storage board separate from the main board is provided. The solid-state storage board includes a solid-state memory device and solid-state storage devices. The system is configured to perform a method that includes a correspondence being established, by a software module located on the main board, between a first logical address and a first physical address on the solid-state storage devices. The correspondence between the first logical address and the first physical address is stored in a location on the solid-state memory device. The method also includes translating the first logical address into the first physical address. The translating is performed by an address translator module located on the solid-state storage board and is based on the previously established correspondence between the first logical address and the first physical address.
摘要:
A refresh of a DRAM having at least a fast and a slow refresh rate includes encoding a pointer on a row or rows with refresh information, reading the refresh information, and incrementing a fast refresh address counter with the refresh information. The refresh may be performed by encoding one or more cells on a row that may require a fast refresh, one or more cells on a group of rows that may require a fast refresh, or one or more cells on a row that may not require a fast refresh.
摘要:
A method for receiving a data stream that includes data samples, each data sample having one of a plurality of actual values. For each data sample in the data stream, a first index in a dictionary is selected. The dictionary includes indices corresponding to each of the plurality of actual values. The first index corresponds to an actual value of the data sample. A predicted value of the data sample is generated in response to previously received data samples in the data stream and to a prediction algorithm. A second index in the dictionary that corresponds to an actual value in the dictionary that is closest to the value of the predicted value is selected. The difference between the first index and the second index is calculated and compressed. The compressed difference between the first index and the second index is then output. This process is performed for each data sample in the data stream.
摘要:
Memory cell presetting for improved performance including a method for using a computer system to identify a region in a memory. The region includes a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a current state of the memory cells to a desired state of the memory cells and a second expected value when the write operation changes a specified state of the memory cells to the desired state of the memory cells. The second expected value is closer than the first expected value to a desired value of the write performance characteristic. The plurality of memory cells in the region are set to the specified state, and the data is written into the plurality of memory cells responsive to the setting.