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    VARIABILITY AWARE WEAR LEVELING
    1.
    发明申请
    VARIABILITY AWARE WEAR LEVELING 有权
    可变性知识磨损水平

    公开(公告)号：US20130339570A1

    公开(公告)日：2013-12-19

    申请号：US13525757

    申请日：2012-06-18

    申请人： Michele Franceschini ,  Ashish Jagmohan ,  Moinuddin K. Qureshi ,  Luis A. Lastras

    发明人： Michele Franceschini ,  Ashish Jagmohan ,  Moinuddin K. Qureshi ,  Luis A. Lastras

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F12/0292 ,  G06F2212/7201 ,  G06F2212/7211

    摘要： Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products.

    摘要翻译： 提出了技术，包括至少基于对应于该位置的一个或多个磨损度量，确定要写入非易失性存储器的数据的非易失性存储器中应该写入数据的位置。 一个或多个磨损指标基于位置的测量。 测量值估计位置的物理磨损。 这些技术还包括将数据写入非易失性存储器中确定的位置。 这些技术可以通过方法，装置（例如，存储器控制器）和计算机程序产品来执行。

    MEMORY CELL PRESETTING FOR IMPROVED MEMORY PERFORMANCE
    6.
    发明申请
    MEMORY CELL PRESETTING FOR IMPROVED MEMORY PERFORMANCE 有权
    用于改善记忆性能的存储单元预置

    公开(公告)号：US20130013860A1

    公开(公告)日：2013-01-10

    申请号：US13619451

    申请日：2012-09-14

    申请人： Michele M. Franceschini ,  Ashish Jagmohan ,  John P. Karidis ,  Luis A. Lastras-Montano ,  Moinuddin K. Qureshi

    发明人： Michele M. Franceschini ,  Ashish Jagmohan ,  John P. Karidis ,  Luis A. Lastras-Montano ,  Moinuddin K. Qureshi

    IPC分类号： G06F12/00 ,  G06F12/08

    CPC分类号： G06F12/00 ,  G06F12/08 ,  G06F12/0802 ,  G06F12/0891

    摘要： Memory cell presetting for improved performance including a method for using a computer system to identify a region in a memory. The region includes a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a current state of the memory cells to a desired state of the memory cells and a second expected value when the write operation changes a specified state of the memory cells to the desired state of the memory cells. The second expected value is closer than the first expected value to a desired value of the write performance characteristic. The plurality of memory cells in the region are set to the specified state, and the data is written into the plurality of memory cells responsive to the setting.

    摘要翻译： 用于改进性能的存储单元预设，包括使用计算机系统识别存储器中的区域的方法。 该区域包括多个存储单元，其特征在于当写入操作将存储单元的当前状态改变到存储单元的期望状态时具有第一期望值的写入性能特性，以及当写入操作改变时第二预期值 存储器单元的指定状态到存储器单元的期望状态。 第二期望值比第一期望值更接近写入性能特性的期望值。 区域中的多个存储单元被设置为指定状态，并且响应于该设置将数据写入多个存储单元。

    Memory cell presetting for improved memory performance
    8.
    发明授权
    Memory cell presetting for improved memory performance 有权
    内存单元预置，以提高内存性能

    公开(公告)号：US08874846B2

    公开(公告)日：2014-10-28

    申请号：US13619451

    申请日：2012-09-14

    申请人： Michele M. Franceschini ,  Ashish Jagmohan ,  John P. Karidis ,  Luis A. Lastras-Montano ,  Moinuddin K. Qureshi

    发明人： Michele M. Franceschini ,  Ashish Jagmohan ,  John P. Karidis ,  Luis A. Lastras-Montano ,  Moinuddin K. Qureshi

    IPC分类号： G06F12/00 ,  G06F12/08

    CPC分类号： G06F12/00 ,  G06F12/08 ,  G06F12/0802 ,  G06F12/0891

    摘要： Memory cell presetting for improved performance including a method for using a computer system to identify a region in a memory. The region includes a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a current state of the memory cells to a desired state of the memory cells and a second expected value when the write operation changes a specified state of the memory cells to the desired state of the memory cells. The second expected value is closer than the first expected value to a desired value of the write performance characteristic. The plurality of memory cells in the region are set to the specified state, and the data is written into the plurality of memory cells responsive to the setting.

    摘要翻译： 用于改进性能的存储单元预设，包括使用计算机系统识别存储器中的区域的方法。 该区域包括多个存储单元，其特征在于当写入操作将存储单元的当前状态改变到存储单元的期望状态时具有第一期望值的写入性能特性，以及当写入操作改变时第二预期值 存储器单元的指定状态到存储器单元的期望状态。 第二期望值比第一期望值更接近写入性能特性的期望值。 区域中的多个存储单元被设置为指定状态，并且响应于该设置将数据写入多个存储单元。