Particulate material processing apparatus and particulate material processing system
    73.
    发明授权
    Particulate material processing apparatus and particulate material processing system 有权
    颗粒材料加工设备和颗粒物料处理系统

    公开(公告)号:US08007736B2

    公开(公告)日:2011-08-30

    申请号:US12272003

    申请日:2008-11-17

    CPC分类号: F26B17/1441 F26B9/063

    摘要: A particulate material processing apparatus has a vessel, a processing tank, and a dispersing member. The vessel has a charging port for charging a particulate material into the vessel. The processing tank receives the particulate material charged from the charging port. The processing tank is shaped so as to narrow towards the bottom. At least the lower part of the processing tank is made of a gas-permeable material that allows the process gas for processing the particulate material to pass through. The dispersing member is disposed below the charging port. The dispersing member disperses and flattens the particulate material on the processing tank.

    摘要翻译: 颗粒材料处理装置具有容器,处理槽和分散构件。 容器具有用于将颗粒材料装入容器中的装料口。 处理槽接收从充电口充入的颗粒物质。 处理槽的形状使得朝向底部变窄。 处理槽的至少下部由透气材料制成,其允许用于处理颗粒材料的处理气体通过。 分散构件设置在充电口下方。 分散构件将颗粒材料分散并平坦化在处理槽上。

    Caulking coupling device, switch and transmission switch
    74.
    发明申请
    Caulking coupling device, switch and transmission switch 有权
    填缝联轴器,开关和传动开关

    公开(公告)号:US20100288612A1

    公开(公告)日:2010-11-18

    申请号:US12662671

    申请日:2010-04-28

    申请人: Hiroyuki Shimada

    发明人: Hiroyuki Shimada

    IPC分类号: H01H9/00 B23P19/00

    摘要: A punch includes a first caulking surface and a second caulking surface caulking margins of which axially differ in depth and sequentially formed in a peripheral direction, and includes a regulating surface opposing an outer peripheral surface of a caulking process portion to the first caulking surface of the first and second caulking surfaces, which has a deeper caulking margin, wherein the regulating surface regulates radial fillet movement by caulking of the caulking process portion to promote the fillet movement to the second caulking surface of the first and second caulking surfaces, which has a less deep caulking margin.

    摘要翻译: 冲头包括第一铆接表面和深度方向不同并沿圆周方向依次形成的第二铆接表面铆接边缘,并且包括与铆接处理部分的外周表面相对的第一填缝表面的第一填缝表面 第一和第二填缝表面具有较深的铆接边缘,其中调节表面通过铆接加工部分的铆接来调节径向圆角运动,以促进圆角运动到第一和第二填缝表面的第二填缝表面,其具有较小的 深填缝。

    Manufacturing process of thin film transistor
    76.
    发明授权
    Manufacturing process of thin film transistor 失效
    薄膜晶体管的制造工艺

    公开(公告)号:US07541226B2

    公开(公告)日:2009-06-02

    申请号:US11354032

    申请日:2006-02-15

    申请人: Hiroyuki Shimada

    发明人: Hiroyuki Shimada

    IPC分类号: H01L21/00

    摘要: A manufacturing process of a thin film transistor, includes: forming a silicon film of a preset thickness, in which film stress becomes under 2.0×109 dyne/cm2 in absolute value, on one surface of a transparent substrate; and forming a thin film transistor on other surface of the transparent substrate on which the silicon film is not formed.

    摘要翻译: 薄膜晶体管的制造工艺包括:在透明基板的一个表面上形成膜应力在绝对值下为2.0×10 9达因/ cm 2的预定厚度的硅膜; 以及在其上未形成有硅膜的透明基板的其他表面上形成薄膜晶体管。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE
    77.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE 审中-公开
    薄膜晶体管和显示器件

    公开(公告)号:US20080217619A1

    公开(公告)日:2008-09-11

    申请号:US12042766

    申请日:2008-03-05

    申请人: Hiroyuki Shimada

    发明人: Hiroyuki Shimada

    IPC分类号: H01L33/00

    CPC分类号: H01L29/78612 H01L29/42384

    摘要: The fully depleted thin film transistor (TFT) formed on a semiconductor film (103) on an insulator (101) is, in order to improve characteristics of the fully depleted thin film transistor, formed including a gate electrode formed over the semiconductor film having a gate insulating film (107) therebetween, source-drain regions (111) formed in the semiconductor film at both sides of the gate electrode, a channel region (CH) located between the source-drain regions (111), and a body contact region (113) adjacent to the channel region. A substrate floating effect can be reduced, even if the gate electrode is miniaturized, by providing a body contact region so as to withdraw excess carriers generated in the channel region through the body contact region.

    摘要翻译: 形成在绝缘体(101)上的半导体膜(103)上的完全耗尽的薄膜晶体管(TFT)为了提高完全耗尽的薄膜晶体管的特性,其特征在于,包括形成在具有 栅极绝缘膜(107)之间,形成在栅电极两侧的半导体膜中的源 - 漏区(111),位于源极 - 漏极区(111)之间的沟道区(CH),以及主体接触区 (113)邻近通道区域。 即使栅电极小型化,也可以通过设置体接触区域,通过身体接触区域取出在沟道区域中产生的过量载流子,能够降低衬底浮动效应。

    Method for manufacturing both a semiconductor crystalline film and semiconductor device
    78.
    发明授权
    Method for manufacturing both a semiconductor crystalline film and semiconductor device 失效
    制造半导体结晶膜和半导体器件的方法

    公开(公告)号:US07268026B2

    公开(公告)日:2007-09-11

    申请号:US11374351

    申请日:2006-03-13

    申请人: Hiroyuki Shimada

    发明人: Hiroyuki Shimada

    IPC分类号: H01L21/00

    摘要: A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an amorphous silicon film over the oxide silicon film, heating the amorphous silicon film such that a portion of the amorphous silicon film in the at least one hole is in a non-melting state and a substantial remainder of the amorphous silicon film is brought into a melting state, and allowing the amorphous silicon film to cool such that crystal growth is generated using the non-melting state portion as a crystal nucleus.

    摘要翻译: 一种形成用于半导体制造工艺的晶粒的方法,所述方法包括以下步骤:在玻璃基板上形成氧化硅膜,在所述氧化物硅膜中的预定位置蚀刻至少一个孔,形成非晶硅 在所述氧化物硅膜上形成膜,加热所述非晶硅膜使得所述至少一个孔中的所述非晶硅膜的一部分处于非熔化状态,并且所述非晶硅膜的其余部分进入熔融状态, 并且使非晶硅膜冷却,使得使用非熔融状态部分作为晶核产生晶体生长。