摘要:
A particulate material processing apparatus has a vessel and a processing tank. The vessel has a charging port for charging a particulate material into the vessel. The processing tank receives the particulate material charged from the charging port. The processing tank is shaped so as to narrow towards the bottom. At least the lower part of the processing tank is made of a gas-permeable material that allows the process gas for processing the particulate material to pass through. The upper part of the processing tank has lower gas permeability than the lower part of the processing tank.
摘要:
A particulate material processing apparatus has a vessel, a processing tank, and a dispersing member. The vessel has a charging port for charging a particulate material into the vessel. The processing tank receives the particulate material charged from the charging port. The processing tank is shaped so as to narrow towards the bottom. At least the lower part of the processing tank is made of a gas-permeable material that allows the process gas for processing the particulate material to pass through. The dispersing member is disposed below the charging port. The dispersing member disperses and flattens the particulate material on the processing tank.
摘要:
A particulate material processing apparatus has a vessel, a processing tank, and a dispersing member. The vessel has a charging port for charging a particulate material into the vessel. The processing tank receives the particulate material charged from the charging port. The processing tank is shaped so as to narrow towards the bottom. At least the lower part of the processing tank is made of a gas-permeable material that allows the process gas for processing the particulate material to pass through. The dispersing member is disposed below the charging port. The dispersing member disperses and flattens the particulate material on the processing tank.
摘要:
A particulate material processing apparatus has a vessel and a processing tank. The vessel has a charging port for charging a particulate material into the vessel. The processing tank receives the particulate material charged from the charging port. The processing tank is shaped so as to narrow towards the bottom. At least the lower part of the processing tank is made of a gas-permeable material that allows the process gas for processing the particulate material to pass through. The upper part of the processing tank has lower gas permeability than the lower part of the processing tank.
摘要:
A nip forming device includes an endless belt that is flexible and rotates and a nip former that is disposed opposite an inner circumferential face of the endless belt. A pressure rotator presses against the nip former via the endless belt to form a nip between the endless belt and the pressure rotator, through which a conveyed object is conveyed. A separator is disposed downstream from the nip in a conveyance direction of the conveyed object. The separator separates the conveyed object from the endless belt. The separator includes a non-contact portion separated from the endless belt and a contact portion that contacts the endless belt. The contact portion retains a gap having a predetermined size between the non-contact portion and the endless belt.
摘要:
A fixing device includes a first rotator, a second rotator, a heater, a nip formation pad, and a separator. The second rotator contacts an outer circumferential surface of the first rotator to form a nip between the first rotator and the second rotator. The heater includes a resistive heat generator to heat the first rotator. The nip formation pad contacts an inner circumferential surface of the first rotator to form the nip. The separator separates a recording medium passing through the nip from the first rotator. The separator includes a separating surface and a contact. The separating surface is separated from the outer circumferential surface of the first rotator and separates the recording medium from the first rotator. The contact contacts the outer circumferential surface of the first rotator at a position where the first rotator is pinchable between the contact and the nip formation pad.
摘要:
A fixing device includes an endless fixing rotator, a heater, a nip formation pad, and a pressure rotator. The heater is disposed opposite an inner circumferential surface of the fixing rotator to heat the fixing rotator. The nip formation pad is disposed opposite the inner circumferential surface of the fixing rotator that is slidable over the nip formation pad. The pressure rotator is configured to press against the nip formation pad via the fixing rotator to form a fixing nip through which a recording medium bearing a toner image is conveyed while being sandwiched between the fixing rotator and the pressure rotator. The nip formation pad includes a base and a thermal equalizer having a thermal conductivity higher than a thermal conductivity of the base. The nip formation pad has a nip face opposite the fixing nip. The thermal equalizer is disposed in at least part of the nip face.
摘要:
An ester wax is provided. The ester wax includes a long-chain aliphatic ester represented by the following formula: R—COO—R′ wherein R represents an alky group having 13 to 23 carbon atoms and R′ represents an alkyl group having 18 to 22 carbon atoms. The ester wax further includes an aliphatic alcohol having 18 to 22 carbon atoms in an amount less than 3% by mass based on a total mass of the ester wax.
摘要:
An image forming apparatus includes an exhaust duct to guide air inside the image forming apparatus to an outside of the image forming apparatus. A positive ion generator emits a positive ion into the exhaust duct. A negative ion generator emits a negative ion into the exhaust duct. The negative ion generator is shifted from the positive ion generator in one of an air flow direction of the air moving inside the exhaust duct and a direction perpendicular to the air flow direction.
摘要:
In a base material with a single-crystal silicon carbide film according to an embodiment of the invention, a plurality of recessed portions is formed on the surface of a silicon substrate, an insulating film including silicon oxide is formed across the surface of the silicon substrate including the inner surfaces of the recessed portions, the top surfaces of side wall portions of recessed portions of the insulating film form flat surfaces, a single-crystal silicon carbide film is joined on the flat surfaces, and the recessed portions below the single-crystal silicon carbide film form holes.