公开(公告)号：US11437389B2

公开(公告)日：2022-09-06

申请号：US16811118

申请日：2020-03-06

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo

IPC: H01L27/11556 ,  G11C5/06 ,  G11C5/02 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly having a memory array region which includes channel material pillars extending through a stack of alternating conductive and insulative levels. A second region is adjacent the memory array region. A conductive expanse is within the memory array region and electrically coupled with the channel material of the channel material pillars. A panel extends across the memory array region and the second region. The panel separates one memory block region from another. The panel has a first portion over the conductive expanse, and has a second portion adjacent the first portion. The panel has a bottom surface. A first segment of the bottom surface is adjacent an upper surface of the conductive expanse. A segment of the bottom surface within the second portion is elevationally offset relative to the first segment. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11424184B2

公开(公告)日：2022-08-23

申请号：US16952913

申请日：2020-11-19

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522

Abstract: A microelectronic device comprises pillar structures comprising semiconductive material, contact structures in physical contact with upper portions of the pillar structures, and conductive structures over and in physical contact with the contact structures. Each of the conductive structures comprises an upper portion having a first width, and a lower portion vertically interposed between the upper portion and the contact structures. The lower portion has a tapered profile defining additional widths varying from a second width less than the first width at an uppermost boundary of the lower portion to a third width less than the second width at a lowermost boundary of the lower portion. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20220231031A1

公开(公告)日：2022-07-21

申请号：US17153740

申请日：2021-01-20

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Shuangqiang Luo ,  Harsh Narendrakumar Jain ,  Nancy M. Lomeli ,  Christopher J. Larsen

IPC: H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573 ,  H01L23/00 ,  H01L23/528 ,  H01L23/522

Abstract: A method of forming a microelectronic device includes forming a microelectronic device structure. The microelectronic device structure includes a stack structure having an alternating sequence of conductive structures and insulative structures, an upper stadium structure, a lower stadium structure, and a crest region defined between a first stair step structure of the upper stadium structure and a second stair step structure of the lower stadium structure. The stack structure further includes pillar structures extending through the stack structure and dielectric structures interposed between neighboring pillar structures within the upper stadium structure. The method further includes forming a trench in the crest region of the stack structure between two dielectric structures of the dielectric structures on opposing sides of another dielectric structure and filling the trench with a dielectric material. The trench partially overlaps with the dielectric structures.

公开(公告)号：US20220157719A1

公开(公告)日：2022-05-19

申请号：US16952913

申请日：2020-11-19

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/522 ,  H01L21/768 ,  H01L21/311

Abstract: A microelectronic device comprises pillar structures comprising semiconductive material, contact structures in physical contact with upper portions of the pillar structures, and conductive structures over and in physical contact with the contact structures. Each of the each of the conductive structures comprises an upper portion having a first width, and a lower portion vertically interposed between the upper portion and the contact structures. The lower portion has a tapered profile defining additional widths varying from a second width less than the first width at an uppermost boundary of the lower portion to a third width less than the second width at a lowermost boundary of the lower portion. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20220130954A1

公开(公告)日：2022-04-28

申请号：US17078755

申请日：2020-10-23

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Harsh Narendrakumar Jain

IPC: H01L29/06 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522

Abstract: A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, a staircase structure within the stack structure having steps comprising horizontal edges of the tiers, a first insulative material vertically overlying the staircase structure, conductive contact structures comprising a conductive material extending through the first insulative material and in contact with the steps of the staircase structure, and a second insulative material extending in a first horizontal direction between horizontally neighboring conductive contact structures and exhibiting one or more different properties than the first insulative material. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US20220085065A1

公开(公告)日：2022-03-17

申请号：US17456544

申请日：2021-11-24

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US11239248B2

公开(公告)日：2022-02-01

申请号：US16686830

申请日：2019-11-18

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  John D. Hopkins ,  Roger W. Lindsay ,  Shuangqiang Luo

IPC: H01L27/11573 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11529 ,  H01L21/768

Abstract: A method of forming a microelectronic device comprises forming isolated nitride structures on steps of stair step structures comprising stacked tiers comprising alternating levels of a first insulative material and a second insulative material, forming a photoresist material over some of the stair step structures, and replacing the isolated nitride structures and the second insulative material with an electrically conductive material to respectively form conductive pad structures and electrically conductive lines. Related microelectronic devices and electronic devices are also disclosed.

公开(公告)号：US20210375894A1

公开(公告)日：2021-12-02

申请号：US17395751

申请日：2021-08-06

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout ,  Rita J. Klein

IPC: H01L27/11529 ,  G11C5/06 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11556

Abstract: Some embodiments include an integrated assembly having a conductive expanse over conductive nodes. The conductive nodes include a first composition. A bottom surface of the conductive expanse includes a second composition which is different composition than the first composition. A stack is over the conductive expanse. The stack includes alternating first and second levels. Pillar structures extend vertically through the stack. Each of the pillar structures includes a post of conductive material laterally surrounded by an insulative liner. At least one of the posts extends through the conductive expanse to directly contact one of the conductive nodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210151455A1

公开(公告)日：2021-05-20

申请号：US16686830

申请日：2019-11-18

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  John D. Hopkins ,  Roger W. Lindsay ,  Shuangqiang Luo

IPC: H01L27/11573 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L21/768 ,  H01L27/11529

Abstract: A method of forming a microelectronic device comprises forming isolated nitride structures on steps of stair step structures comprising stacked tiers comprising alternating levels of a first insulative material and a second insulative material, forming a photoresist material over some of the stair step structures, and replacing the isolated nitride structures and the second insulative material with an electrically conductive material to respectively form conductive pad structures and electrically conductive lines. Related microelectronic devices and electronic devices are also disclosed.

公开(公告)号：US20200373316A1

公开(公告)日：2020-11-26

申请号：US16422150

申请日：2019-05-24

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout ,  Rita J. Klein

IPC: H01L27/11529 ,  G11C5/06 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly having a conductive expanse over conductive nodes. The conductive nodes include a first composition. A bottom surface of the conductive expanse includes a second composition which is different composition than the first composition. A stack is over the conductive expanse. The stack includes alternating first and second levels. Pillar structures extend vertically through the stack. Each of the pillar structures includes a post of conductive material laterally surrounded by an insulative liner. At least one of the posts extends through the conductive expanse to directly contact one of the conductive nodes. Some embodiments include methods of forming integrated assemblies.