Abstract:
An image sensor is provided. The image sensor may include; an optical detection device layer including a plurality of optical detection devices; a filter array layer including a plurality of color filters and at least one infrared filter, and disposed on the optical detection device layer; and a plurality of beam splitters disposed in a plurality of pixels, the plurality of pixels being in contact with an infrared ray pixel including the at least one infrared ray color filter, and that are configured to change a direction of an infrared ray component of incident light towards the infrared ray pixel.
Abstract:
An image sensor, and an apparatus and method of acquiring an image by using the image sensor are provided. The image sensor includes a color filter having an array of a plurality of types of color filter elements, where each of the color filter elements transmits visible light in a certain wavelength band and blocks visible light outside the certain wavelength band; a photoelectric conversion cell array that detects light that has been transmitted through the color filter; and a modulator, disposed on the photoelectric conversion cell array, which changes a rate of light transmitted to the photoelectric conversion cell array based on an applied voltage.
Abstract:
Provided is a tunable electro-optic filter including a reflective structure including a first reflective layer including a first pattern layer having a first meta-surface structure disposed on a first side of the liquid crystal layer and a second reflective layer including a second pattern layer having a second meta-surface structure disposed on a second side of the liquid crystal layer. Each of the first meta-surface structure and the second meta-surface structure includes multiple dielectric materials which are alternately stacked, and a thickness of each dielectric material gradually increases. Alternately, the tunable electro-optic filter may include a pattern layer having a meta-surface structure disposed on at least a side of the liquid crystal layer.
Abstract:
An image sensor includes a pixel array including a first pixel row, in which a plurality of first pixels and a plurality of second pixels are alternately arranged, and a second pixel row, in which a plurality of second pixels and a plurality of third pixels are alternately arranged; first color separation elements configured to allow light having a second wavelength band, among incident light, to pass therethrough and travel in a downward direction, and to allow a mixture of light having a first wavelength band and light having a third wavelength band, among the incident light, to pass therethrough and travel in a lateral direction; and first color filters on at least a portion of the plurality of first pixels, the first color filters being configured to transmit only the light having the first wavelength band.
Abstract:
A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized.