摘要:
According to one embodiment, a method of driving an electrostatic actuator includes a first electrode provided on a substrate, a second electrode arranged above the first electrode to be movable in a vertical direction, and an insulating film provided between the first electrode and the second electrode, includes boosting a power supply voltage to generate a driving voltage of the electrostatic actuator, and applying the driving voltage to each of the first electrode and the second electrode when setting the electrostatic actuator in an up state.
摘要:
According to one embodiment, a MEMS devise includes an electrode on a substrate, a movable structure which is supported in midair above the electrode by first and second anchor portions on the substrate, and moves toward the electrode, a first spring structure which connects the first anchor portion to the movable structure and uses a ductile material, and a second spring structure which connects the second anchor portion to the movable structure and uses a brittle material.
摘要:
An actuator of the present invention includes a moving part, and a driving electrode which is comprised of electrode parts electrically isolated from each other and drives the moving part. A drive voltage is applied selectively to some of the electrode parts to control an electrostatic force which acts on the moving part.
摘要:
A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.
摘要:
A high frequency MEMS 1 as a high frequency electrical element has a silicon substrate 2 wholly formed with an insulation film, a first signal line 4 provided on the silicon substrate 2, a second signal line 5 provided on the silicon substrate 2, the second signal line 5 crossing the first signal line 4 within a first region above the silicon substrate 2, and a dielectric film 9 interposed between the first signal line 4 and the second signal line 5, and provided on one of the first signal line 4 and the second signal line 5, within the first region, the first signal line 4 and the second signal line 5 being relatively movable in directions for a contacting approach and a mutual spacing in between.
摘要:
A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.
摘要:
An actuator includes a movable beam supported on a substrate by a supporting portion, and having a first movable end and a second movable end. The second movable end is opposite to the first movable end with respect to the supporting portion. A first drive beam is connected to the movable beam at around the second movable end. The first drive beam is fixed on the substrate at an end portion of the first drive beam. A second drive beam is connected to the movable beam at a location between the supporting portion and the first movable end. The second drive beam is fixed on the substrate at another end portion of the second drive beam.
摘要:
A semiconductor device includes an elastic member, first and second electrodes, a piezoelectric actuator, and an electrostatic actuator. One end of the elastic member is fixed on a substrate through an anchor so as to form a gap between the elastic member and the substrate. The first and second electrodes are placed to face the other end of the elastic member and the substrate, respectively. The piezoelectric actuator deforms the other end of the elastic member to bring it close to the substrate. The electrostatic actuator includes a third electrode placed in the elastic member and a fourth electrode placed on the substrate so as to face the third electrode, and deforms the other end of the elastic member so as to bring it close to the substrate. The distance between the first and second electrodes is changed by driving the piezoelectric actuator and the electrostatic actuator.
摘要:
A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.
摘要:
A semiconductor memory device having a data latch circuit has plural bit lines to which a reprogrammable memory cell is connected, a data bus on which data is transferred, a latch circuit latching the data transferred on the data bus, a read out circuit connected to the data bus, and a data transfer circuit group to directly transfer the data latched in the latch circuit to the read out circuit without transferring it to the memory cell.