公开(公告)号：US6123780A

公开(公告)日：2000-09-26

申请号：US6977

申请日：1998-01-14

申请人： Hitoshi Kanai ,  Kenichi Aoshima ,  Kenichiro Yamada ,  Mitsumasa Okada ,  Eiji Shimizu ,  Junichi Kane

发明人： Hitoshi Kanai ,  Kenichi Aoshima ,  Kenichiro Yamada ,  Mitsumasa Okada ,  Eiji Shimizu ,  Junichi Kane

IPC分类号： G11B5/31 ,  G11B5/39 ,  C21D1/04

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3163

摘要： A method for manufacturing a spin valve GMR head is describe in which a fixed magnetic layer of the head may maintain magnetization in a desired orientation. In one aspect of the invention, the method comprises steps of: forming a magnetic film including at least a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a second heat treatment under a magnetic field and at a higher temperature than the maximum temperature applied in the processes that precede the second heat treatment, to fix the magnetization in the fixed magnetic layer. In anther aspect of the invention, the method comprises steps of: forming a magnetic film including a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to fix the magnetization in the fixed magnetic layer; subjecting the magnetic film to a second heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a third heat treatment in the absence of an externally applied magnetic field.

摘要翻译： 描述了用于制造自旋阀GMR头的方法，其中磁头的固定磁性层可以将磁化保持在期望的取向。 在本发明的一个方面，所述方法包括以下步骤：形成至少包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 在磁场下对磁性膜进行第一次热处理以提高自由磁性层的磁各向异性; 并且在磁场和比在第二热处理之前的工序中施加的最高温度更高的温度下对磁性膜进行第二次热处理，以将磁化固定在固定磁性层中。 在本发明的另一方面，该方法包括以下步骤：形成包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 对磁性膜进行磁场的第一次热处理，以固定在固定磁性层中的磁化强度; 在磁场下对磁性膜进行第二次热处理，以提高自由磁性层的磁各向异性; 并且在没有外部施加的磁场的情况下对磁性膜进行第三次热处理。

公开(公告)号：US08164997B2

公开(公告)日：2012-04-24

申请号：US12769501

申请日：2010-04-28

申请人： Kenichiro Yamada ,  Takeyoshi Kataoka

发明人： Kenichiro Yamada ,  Takeyoshi Kataoka

IPC分类号： G11B11/00

CPC分类号： G11B7/0956 ,  G11B7/13925 ,  G11B2007/0013

摘要： An optical disc apparatus including means for calculating a spherical aberration correction quantity of an object lens, reproduced information signal generation means and spherical aberration correction means conducts spherical aberration correction, finds a spherical aberration correction quantity suitable for another layer by calculation on the basis of the obtained spherical aberration correction quantity, and sets the correction quantity as an initial correction quantity of spherical aberration correction. An optical disc apparatus including tilt correction quantity calculation means, reproduced information signal generation means and tilt adjustment means conducts tilt adjustment, finds a tilt correction quantity suitable for another layer by calculation on the basis of the obtained tilt correction quantity, and sets the correction quantity as an initial correction quantity of tilt adjustment.

摘要翻译： 一种光盘装置，包括用于计算物镜的球面像差校正量的装置，再现信息信号产生装置和球面像差校正装置进行球面像差校正，通过基于该像素校正的计算找到适合于另一层的球面像差校正量 获得球面像差校正量，并将校正量设置为球面像差校正的初始校正量。 一种包括倾斜校正量计算装置的光盘装置，再现信息信号产生装置和倾斜调整装置进行倾斜调整，基于获得的倾斜校正量，通过计算找到适合于另一层的倾斜校正量，并将校正量 作为倾斜调整的初始校正量。

公开(公告)号：US06876524B2

公开(公告)日：2005-04-05

申请号：US09808253

申请日：2001-03-14

申请人： Ikuya Tagawa ,  Kenichiro Yamada

发明人： Ikuya Tagawa ,  Kenichiro Yamada

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistive transducer includes a magnetoresistive (MR) film interposed between domain control layers along the surface of a lower non-magnetic gap layer. Lead layers are formed on the domain control layers. An upper non-magnetic gap layer and an upper shield layer are sequentially formed to extend over the MR film and the lead layers. The upper shield layer is opposed to the surfaces of the MR element and the lead layers at a flat boundary or interface. The residual magnetization is supposed to exist in the upper shield layer in the direction of the magnetization established in the domain control layers after the upper shield layer has been subjected to the applied magnetic field for the magnetization of the domain control layers. The residual magnetization can be kept continuous along the flat interface of the upper shield layer. Any magnetic poles are hardly generated along the interface of the upper shield layer. The longitudinal bias field can be prevented from receiving the interaction of the residual magnetization in the upper shield layer. Reduction in the longitudinal bias field can thus be suppressed.

摘要翻译： 磁阻换能器包括沿着下部非磁隙层的表面介于畴控制层之间的磁阻（MR）膜。 引线层形成在域控制层上。 依次形成上部非磁性间隙层和上部屏蔽层，以在MR膜和引线层上延伸。 上屏蔽层在平坦的边界或界面处与MR元件和引线层的表面相对。 在上部屏蔽层已经施加了用于域控制层的磁化的磁场之后，在畴控制层中建立的磁化方向上存在剩余磁化强度。 剩余磁化可以沿着上屏蔽层的平坦界面保持连续。 沿着上屏蔽层的界面几乎不产生任何磁极。 可以防止纵向偏置场接收上屏蔽层中剩余磁化的相互作用。 因此可以抑制纵向偏置场的减小。

公开(公告)号：US6046890A

公开(公告)日：2000-04-04

申请号：US7572

申请日：1998-01-15

申请人： Kenichiro Yamada ,  Yuji Uehara ,  Junzo Toda

发明人： Kenichiro Yamada ,  Yuji Uehara ,  Junzo Toda

IPC分类号： G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  H01F10/26 ,  H01F41/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  G11B5/11 ,  G11B5/3106

摘要： A magnetoresistive head of the present invention is not easily damaged by electrostatic discharge, and is easy to manufacture. A magnetoresistance effect element is interposed between upper and lower shields composed of soft magnetic material through first and second gaps composed of an insulating material. The lower shield is connected to a slider via a slider protective film, which is an insulating substance. The magnetoresistive head is constructed so that a capacity Cg between the magnetoresistance effect element and the lower shield is 6.3 or more times a capacity between the lower shield and the slider by using a material (e.g., silicon carbide) exhibiting a large relative dielectric constant as, e.g., a second gap material.

摘要翻译： 本发明的磁阻头不易受到静电放电的损害，容易制造。 磁阻效应元件通过由绝缘材料构成的第一和第二间隙插在由软磁材料构成的上屏蔽和下屏蔽之间。 下屏蔽件通过作为绝缘物质的滑块保护膜连接到滑块。 磁阻磁头的构造使得通过使用表现出较大的相对介电常数的材料（例如，碳化硅），磁阻效应元件和下屏蔽之间的电容Cg是下屏蔽和滑块之间的容量的6.3倍或更多倍 ，例如第二间隙材料。

公开(公告)号：US06829122B2

公开(公告)日：2004-12-07

申请号：US09961594

申请日：2001-09-24

申请人： Kenichiro Yamada ,  Naoki Mukoyama ,  Hidehiko Suzuki ,  Hitoshi Kanai

发明人： Kenichiro Yamada ,  Naoki Mukoyama ,  Hidehiko Suzuki ,  Hitoshi Kanai

IPC分类号： G11B539

CPC分类号： B82Y10/00 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3932

摘要： A magnetic head of a magnetoresistance type is provided. The magnetic head comprises a magnetoresistance film, an underlying layer formed on each of both sides of the magnetoresistance film, and a magnetic-domain regulating film formed on the underlying layer so as to regulate a magnetic domain of a free magnetic layer in the magnetoresistance film. The underlying layer has a laminated structure of a tungsten-(W)-group metal layer formed on a tantalum-(Ta)-group metal layer. The underlying layer is formed so thick as to arrange the magnetic-domain regulating film at a position corresponding to the free magnetic layer.

摘要翻译： 提供磁阻型磁头。 磁头包括磁阻膜，形成在磁阻膜的两侧的每一侧上的下层，以及形成在下层上的磁畴调节膜，以调节磁阻膜中的自由磁性层的磁畴 。 下层具有在钽 - （Ta） - 金属层上形成的钨 - （W） - 金属层的叠层结构。 底层形成得如此厚以便将磁畴调节膜布置在与自由磁性层相对应的位置。

公开(公告)号：US6094325A

公开(公告)日：2000-07-25

申请号：US111035

申请日：1998-07-07

申请人： Ikuya Tagawa ,  Kenichiro Yamada ,  Yuji Uehara

发明人： Ikuya Tagawa ,  Kenichiro Yamada ,  Yuji Uehara

IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3268 ,  G11B2005/3996 ,  G11B5/3163 ,  G11B5/398

摘要： A spin valve head comprises a spin valve film having at least a pinned magnetic layer, a nonmagnetic metal layer, and a free magnetic layaer. The spin valve head further comprises a hard magnetic layer for controlling magnetic domains of the free magnetic layer, and electrode elements for supplying a sense current to the spin valve film, wherein the hard magnetic layer and the free magnetic layer are positioned not to overlap an orthographic projection of the hard magnetic layer in a thickness direction of the spin valve film with an orthographic projection of the free magnetic layer in the thickness direction of the spin valve film. According to such configuration, a single magnetic domain structure which does not generate a reverse magnetic field region throughout the overall surface of the free magnetic layer can be obtained, so that the hysteresis phenomenon is not caused in the spin valve head output. Therefore, the output with no noise can be derived.

摘要翻译： 自旋阀头包括至少具有钉扎磁性层，非磁性金属层和自由磁性层的自旋阀膜。 自旋阀头还包括用于控制自由磁性层的磁畴的硬磁性层和用于向自旋阀膜提供感测电流的电极元件，其中硬磁性层和自由磁性层被定位成不与 在自旋阀膜的厚度方向上的自由磁性层的正投影，在自旋阀膜的厚度方向上对硬磁性层进行正投影。 根据这种结构，可以获得在自由磁性层的整个表面上不产生反向磁场区域的单个磁畴结构，从而不会在自旋阀头输出中产生滞后现象。 因此，可以得出无噪声的输出。