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71.发明授权公开(公告)号：US07355641B2
公开(公告)日：2008-04-08
申请号：US10754799
申请日：2004-01-08
CPC分类号： H04N9/045
摘要： A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.
摘要翻译： 一种固态成像装置，包括：成像部，其中配置用于光电转换入射光的多个像素，以形成具有不同颜色配置的多种像素线; 存储从摄像部中的至少一行的像素得到的像素信号的存储器; 读出存储在存储器中的像素信号的输出信号线; 以及输出部分，输出信号线的信号。 从一行中的第一颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中，然后从第二颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中。 相同颜色的像素信号顺序输出，因此不需要以高速度对每个像素信号进行颜色选择开关。 此外，可以抑制相邻颜色的混合。
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72.发明申请Solid-state device for high-speed photographing and camera provided with the solid-state imaging device as imaging device 审中-公开用于高速拍摄的固态设备和配有固态成像装置的成像装置公开(公告)号：US20080049128A1
公开(公告)日：2008-02-28
申请号：US11889209
申请日：2007-08-09
IPC分类号： H04N3/14
CPC分类号： H04N5/335 , H04N5/353 , H04N5/37452 , H04N5/378
摘要： In each pixel of a MOS-type solid-state imaging device, a plurality of first signals and one or more second signals are accumulated in a plurality of storage areas in a storage unit during driving. Here, each of the plurality of first signals corresponds to a light receiving signal (light receiving signal on which noise is superimposed) which is transmitted from a light receiving unit each time a switching unit is in a closed state, and each of the one or more second signals is a signal (noise such as dark-current noise, fixed pattern noise, and the like) as a voltage of a signal readout path when the switching unit is in an open state. Also, in the solid-state imaging device of the present invention, each of the one or more second signals in the storage unit of each image pixel is in a state of being physically or temporally separated from each of the plurality of first signals.
摘要翻译： 在MOS型固态成像装置的每个像素中，在驱动期间，多个第一信号和一个或多个第二信号被累积在存储单元中的多个存储区域中。 这里，多个第一信号中的每一个对应于每当切换单元处于关闭状态时从光接收单元发送的光接收信号（叠加有噪声的光接收信号），并且每个 更多的第二信号是当开关单元处于打开状态时作为信号读出路径的电压的信号（诸如暗电流噪声，固定图案噪声等的噪声）。 此外，在本发明的固态成像装置中，每个图像像素的存储单元中的一个或多个第二信号中的每一个处于与多个第一信号中的每一个物理或时间上分离的状态。
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公开(公告)号：US07332717B2
公开(公告)日：2008-02-19
申请号：US10580534
申请日：2005-09-15
IPC分类号： G01J5/00
摘要： An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.
摘要翻译： 红外线传感器包括串联电容器元件和参考电容器元件，每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子，参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。 红外光的强度通过在串联电容器元件和参考电容器元件之间施加预定电压而被引入到电位的参考电位之间的电位差和通过施加预定的 串联电容器元件和红外线检测电容器元件之间的电压。
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公开(公告)号：US20080024206A1
公开(公告)日：2008-01-31
申请号：US11826582
申请日：2007-07-17
IPC分类号： H03K5/00
CPC分类号： H03K5/1252 , H04N5/21
摘要： A noise reduction circuit receives, as an input signal, a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals; a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit; and an electric charge accumulation circuit section or a voltage adding circuit. The electric charge accumulation circuit section accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output the resultant electric charge. The voltage adding circuit adds, a predetermined number of times, the voltage difference detected by the voltage difference detection circuit.
摘要翻译： 噪声降低电路作为输入信号接收两个不同信号之间的电压差。 噪声降低电路包括：用于放大两个不同信号的放大器电路; 用于检测由放大器电路放大的两个不同信号之间的电压差的电压差检测电路; 和电荷累积电路部分或电压相加电路。 电荷累积电路部分累积与由电压差检测电路检测出的电压差对应的电荷的预定次数，并组合累计的电荷以输出所得的电荷。 电压加法电路将电压差检测电路检测出的电压差加上规定次数。
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公开(公告)号：US20070285544A1
公开(公告)日：2007-12-13
申请号：US11785625
申请日：2007-04-19
IPC分类号： H04N3/14
CPC分类号： H04N5/335 , H01L27/14601 , H04N5/374 , H04N5/37452
摘要： Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.
摘要翻译： 提供了一种固态成像装置，其可以执行适当数量的像素的高速成像。 在固态成像装置中以矩阵形式排列多个像素。 每个像素包括保持从光电二极管输出的信号电荷的多个信号电荷保持单元。 写目标切换单元选择信号电荷保持单元，使得在不同时间点输出的信号电荷分别被写入信号电荷保持单元。 读取目标切换单元在从其读取信号电荷的信号电荷保持单元之间切换。
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公开(公告)号：US20070222867A1
公开(公告)日：2007-09-27
申请号：US11569603
申请日：2005-02-25
IPC分类号： H04N5/228
摘要： A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.
摘要翻译： 提供一种固态成像装置，即使在像素的信号混合的情况下也能够防止其降低灵敏度。 固态成像装置包括多个像素单元，每个像素单元具有光电转换元件，并且能够对与像素单元的光电转换元件的各个输出相对应的信号求和。 该装置包括：多个电容器，每个电容器分别累积与从相关联的光电转换元件输出的信号相对应的电荷; 以及与相关联的电容器交替连接的多个MOS晶体管。 通过断开MOS晶体管，从每个相关联的电容器中累积从每个光电转换元件输出的信号的电荷，并且通过使MOS晶体管将像素单元的信号相加，电容器串联连接。
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公开(公告)号：US20070188635A1
公开(公告)日：2007-08-16
申请号：US11633583
申请日：2006-12-05
申请人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
发明人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
IPC分类号： H04N9/04
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a λ/4 multilayer film that reflects visible light.
摘要翻译： 固态成像装置101由依次形成在半导体基板201上的透明膜204，滤色器205，平坦化膜207和多个微透镜208构成。光电二极管202形成在 更靠近透明膜204的半导体衬底201.在透明膜204的更靠近半导体衬底201的表面中形成遮光膜203.分别对应于两个相邻像素的滤色器205被分隔开 遮光壁206.遮光壁206是反射可见光的λ/ 4多层膜。
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公开(公告)号：US20070057954A1
公开(公告)日：2007-03-15
申请号：US11517353
申请日：2006-09-08
IPC分类号： G09G5/39
CPC分类号： H04N9/045 , G02B5/201 , H04N9/69 , H04N2209/045
摘要： The solid-state image pickup element comprises a filter film made of a single-layer inorganic material which exhibits a maximum value at a specific wavelength on transmission spectra of incident light in accordance with a film thickness thereof, and a photoelectrical conversion part for generating a signal charge in accordance with light quantity of the incident light transmitted through the filter film. For the filter film, a number of the filter films of at least two kinds having different film thickness is provided, and a number of the filter films are arranged in parallel based on a prescribed arrangement. Image pickup signals outputted from the solid-state image pickup element are signal-processed by a signal processor. The signal processor generates at least one of the signals that correspond to a luminance signal, a color signal, a color difference signal, and light quantity of incident light by applying color conversion processing on the image pickup signal in accordance with the prescribed arrangement.
摘要翻译： 固体摄像元件包括由单层无机材料构成的滤光膜，该滤光膜根据其膜厚在入射光的透射光谱下在特定波长处具有最大值，以及光电转换部， 根据透过过滤膜的入射光的光量来产生信号电荷。 对于过滤膜，设置多个具有不同膜厚度的至少两种的过滤膜，并且根据规定的布置平行布置多个过滤膜。 从固态图像拾取元件输出的图像拾取信号由信号处理器进行信号处理。 根据规定的布置，信号处理器通过对摄像信号进行颜色转换处理来产生对应于亮度信号，颜色信号，色差信号和入射光量的信号中的至少一个。
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公开(公告)号：US07187410B2
公开(公告)日：2007-03-06
申请号：US10087824
申请日：2002-03-05
IPC分类号： H04N3/14
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/14643 , H04N5/374 , H04N5/3741
摘要： In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.
摘要翻译： 在包括每个像素中的浮动扩散（FD）放大器的MOS型传感器中，脉冲数量减少，从而提高数值孔径。 为此，通过公共栅极线提供第一像素的读取晶体管的读取脉冲和与列方向上的与第一像素相邻的第二像素的复位晶体管的复位脉冲; 连接到第一像素的漏极区域（用于向通过复位晶体管的FD部分提供脉冲电压的区域）的漏极线的低电位电位被设置为高于第一像素的光电二极管的电位深度的电位 复位第二像素的像素; 并且通过向该栅极施加低电平电压而获得的第一像素的复位晶体管的栅极之下的电位被设置为高于漏极线的低电平电位的电位。
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公开(公告)号：US07180544B2
公开(公告)日：2007-02-20
申请号：US10086871
申请日：2002-03-04
IPC分类号： H04N3/14
CPC分类号： H04N5/23241 , H04N5/3741 , H04N5/3742
摘要： The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.
摘要翻译： 在每个像素中包括浮动扩散（FD）放大器的MOS型传感器的消耗功率减小。 为此，将单位像素的漏极区域（通过复位晶体管的FD部分提供脉冲电压的区域）逐行连接到不同的排列线，以便选择性地向每行提供功率脉冲。 至少在存储在FD部分中的信号电荷被复位并且检测到存储在FD部分中的信号电荷的周期的时段期间，功率脉冲被设置为高电平电位。
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