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1.发明授权公开(公告)号：US07355641B2
公开(公告)日：2008-04-08
申请号：US10754799
申请日：2004-01-08
CPC分类号： H04N9/045
摘要： A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.
摘要翻译： 一种固态成像装置，包括：成像部，其中配置用于光电转换入射光的多个像素，以形成具有不同颜色配置的多种像素线; 存储从摄像部中的至少一行的像素得到的像素信号的存储器; 读出存储在存储器中的像素信号的输出信号线; 以及输出部分，输出信号线的信号。 从一行中的第一颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中，然后从第二颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中。 相同颜色的像素信号顺序输出，因此不需要以高速度对每个像素信号进行颜色选择开关。 此外，可以抑制相邻颜色的混合。
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2.发明授权Solid state imaging device and differential circuit having an expanded dynamic range 有权具有扩展动态范围的固态成像装置和差分电路公开(公告)号：US08866059B2
公开(公告)日：2014-10-21
申请号：US13055863
申请日：2009-07-23
IPC分类号： H01L27/00 , H01L27/146 , H04N5/235 , H04N5/355
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14645 , H04N5/2355 , H04N5/35572 , H04N5/3559
摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。
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公开(公告)号：US20110121162A1
公开(公告)日：2011-05-26
申请号：US13055863
申请日：2009-07-23
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14645 , H04N5/2355 , H04N5/35572 , H04N5/3559
摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。
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公开(公告)号：US07569906B2
公开(公告)日：2009-08-04
申请号：US11702531
申请日：2007-02-06
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。
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公开(公告)号：US20070012968A1
公开(公告)日：2007-01-18
申请号：US11523578
申请日：2006-09-20
IPC分类号： H01L31/113
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.
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公开(公告)号：US20050045925A1
公开(公告)日：2005-03-03
申请号：US10930814
申请日：2004-09-01
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L21/8238 , H01L27/148
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.
摘要翻译： 本发明是形成在硅基板1上的固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 该固态成像装置包括针对每个像素的成像区域，该成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。
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公开(公告)号：US20080029796A1
公开(公告)日：2008-02-07
申请号：US11826570
申请日：2007-07-17
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14683
摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。
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公开(公告)号：US20070128758A1
公开(公告)日：2007-06-07
申请号：US11605292
申请日：2006-11-29
CPC分类号： B06B1/0292 , H01L27/0629 , H01L28/40 , H01L29/78
摘要： A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.
摘要翻译： 半导体器件在单个衬底上具有包括一对对电极和位于对置电极之间的中空部分的半导体电路部分和中空电容器部分。 中空电容器部分的中空部分被绝缘膜包围，并且在绝缘膜中形成通孔以与中空部分连通。 覆盖中空部分的绝缘膜的顶表面被平坦化。 位于中空部分的侧面的绝缘膜的一部分支撑位于中空部分上的另一部分和对置电极的上部之一。
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公开(公告)号：US07436012B2
公开(公告)日：2008-10-14
申请号：US11335533
申请日：2006-01-20
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。
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公开(公告)号：US07199411B2
公开(公告)日：2007-04-03
申请号：US10930814
申请日：2004-09-01
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.
摘要翻译： 在硅基板上形成固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 固态成像装置包括：对于每个像素，成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。
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