公开(公告)号：US08194443B2

公开(公告)日：2012-06-05

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US20110123022A1

公开(公告)日：2011-05-26

申请号：US12943476

申请日：2010-11-10

申请人： Yuki Oishi ,  Yutaka Higo ,  Hiroshi Kano ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Kazuhiro Bessho

发明人： Yuki Oishi ,  Yutaka Higo ,  Hiroshi Kano ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Kazuhiro Bessho

IPC分类号： G06F7/58 ,  H04L9/06

CPC分类号： G06F7/588

摘要： A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller.

摘要翻译： 随机数生成装置包括：随机数发生器，被配置为具有响应于自旋喷射电流的供应而产生随机数的多个随机数生成元件; 和温度控制器。

公开(公告)号：US20100328993A1

公开(公告)日：2010-12-30

申请号：US12821886

申请日：2010-06-23

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/79

摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

摘要翻译： 一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息 在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

公开(公告)号：US20080164547A1

公开(公告)日：2008-07-10

申请号：US11564595

申请日：2006-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

公开(公告)号：US08351603B2

公开(公告)日：2013-01-08

申请号：US12943476

申请日：2010-11-10

申请人： Yuki Oishi ,  Yutaka Higo ,  Hiroshi Kano ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Kazuhiro Bessho

发明人： Yuki Oishi ,  Yutaka Higo ,  Hiroshi Kano ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Kazuhiro Bessho

IPC分类号： H04L9/00 ,  H04L9/32

CPC分类号： G06F7/588

摘要： A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller.

摘要翻译： 随机数生成装置包括：随机数发生器，被配置为具有响应于自旋喷射电流的供应而产生随机数的多个随机数生成元件; 和温度控制器。

公开(公告)号：US08248847B2

公开(公告)日：2012-08-21

申请号：US12908136

申请日：2010-10-20

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

IPC分类号： G11C11/15

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： Disclosed herein is an information storage element including: a word electrode includes a first magnetic material that is continuously formed and is electrically conductive; a non-magnetic film formed in contact with the first magnetic material of the word electrode; a second magnetic material connected to the first magnetic material via the non-magnetic film; a magnetization setting mechanism disposed near at least one end part of both end parts of the word electrode and sets direction of magnetization of the end part of the word electrode; a coercivity decreasing mechanism decreases coercivity of the second magnetic material; and an electrically-conductive bit electrode so formed as to serve also as the second magnetic material or be formed in parallel to the second magnetic material, the bit electrode being so continuously formed as to intersect with the word electrode.

摘要翻译： 本文公开了一种信息存储元件，包括：字电极，包括连续形成且导电的第一磁性材料; 形成为与字电极的第一磁性材料接触的非磁性膜; 经由非磁性膜连接到第一磁性材料的第二磁性材料; 磁化设置机构，设置在字电极的两端部的至少一个端部附近，并设置字电极的端部的磁化方向; 矫顽力降低机构降低第二磁性材料的矫顽力; 以及导电位电极，其形成为也用作第二磁性材料或与第二磁性材料平行地形成，位电极被连续地形成为与字电极相交。

公开(公告)号：US08018759B2

公开(公告)日：2011-09-13

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20110096591A1

公开(公告)日：2011-04-28

申请号：US12908136

申请日：2010-10-20

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

IPC分类号： G11C11/15

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： Disclosed herein is an information storage element including: a word electrode includes a first magnetic material that is continuously formed and is electrically conductive; a non-magnetic film formed in contact with the first magnetic material of the word electrode; a second magnetic material connected to the first magnetic material via the non-magnetic film; a magnetization setting mechanism disposed near at least one end part of both end parts of the word electrode and sets direction of magnetization of the end part of the word electrode; a coercivity decreasing mechanism decreases coercivity of the second magnetic material; and an electrically-conductive bit electrode so formed as to serve also as the second magnetic material or be formed in parallel to the second magnetic material, the bit electrode being so continuously formed as to intersect with the word electrode.

摘要翻译： 本文公开了一种信息存储元件，包括：字电极，包括连续形成且导电的第一磁性材料; 形成为与字电极的第一磁性材料接触的非磁性膜; 经由非磁性膜连接到第一磁性材料的第二磁性材料; 磁化设置机构，设置在字电极的两端部的至少一个端部附近，并设置字电极的端部的磁化方向; 矫顽力降低机构降低第二磁性材料的矫顽力; 以及导电位电极，其形成为也用作第二磁性材料或与第二磁性材料平行地形成，位电极被连续地形成为与字电极相交。

公开(公告)号：US20070133264A1

公开(公告)日：2007-06-14

申请号：US11565718

申请日：2006-12-01

申请人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

发明人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A storage element includes a storage layer for holding information by use of a magnetization state of a magnetic material, with a pinned magnetization layer provided on one side of the storage layer, with an intermediate layer, to form a laminate film, and with the direction of magnetization of the storage layer being changed by passing a current in the lamination direction so as to record information in the storage layer, wherein the radius of curvature, R, at end portions of a major axis of a plan-view pattern of at least the storage layer, in the laminate film constituting the storage element, satisfies the condition, R≦100 nm.

摘要翻译： 存储元件包括用于通过使用磁性材料的磁化状态保持信息的存储层，在存储层一侧设置有钉扎磁化层，并具有中间层，以形成层压膜，并且与方向 通过在层叠方向上通过电流来改变存储层的磁化强度，以便在存储层中记录信息，其中至少在平面图图案的长轴的端部处的曲率半径R 构成存储元件的层叠膜中的存储层满足条件R <= 100nm。

公开(公告)号：US08072789B2

公开(公告)日：2011-12-06

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/22 ,  G11C11/14 ,  G11C11/04

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。